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Moongyu Jang,Yarkyeon Kim,Jaeheon Shin,Seongjae Lee,Kyoungwan Park 대한전자공학회 2004 Journal of semiconductor technology and science Vol.4 No.2
Silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is 120 uA/uM and on/off-current ratio is higher than 10^5 with low leakage current less than 10nA/um. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length that the subthreshold swing valve can be lower than 60mV/decade.
Schottky Barrier MOSFETs with High Current Drivability for Nano-regime Applications
Moongyu Jang,Yarkyeon Kim,Myungsim Jun,Cheljong Choi,Taeyoub Kim,Byoungchul Park,Seongjae Lee 대한전자공학회 2006 Journal of semiconductor technology and science Vol.6 No.1
Various sizes of erbium/platinum silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20μm to 10nm. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the minimization of trap density between silicide and silicon interface and the reduction of the underlap resistance are the key factors for the improvement of short channel characteristics. The manufactured 10 nm n-type SBMOSFET showed 550μA/um saturation current at VGS-VT = VDS = 2V condition (Tox = 5nm) with excellent short channel characteristics, which is the highest current level compared with reported data.
Moongyu Jang,Yarkyeon Kim,Myungsim Jun,Seongjae Lee 대한전자공학회 2005 Journal of semiconductor technology and science Vol.5 No.2
Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as 1.5×10^(13) traps/㎠, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by N₂annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20㎛ to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.
Scalability of Schottky barrier metal-oxide-semiconductor transistors
Jang Moongyu 나노기술연구협의회 2016 Nano Convergence Vol.3 No.11
In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. The most important factors, i.e., interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are estimated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are estimated as 1.5 × 1013 traps/cm2, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by N2 annealing. Based on the diode characteristics, various sizes of erbium-silicided/platinum-silicided n/p-type SB-MOSFETs are manufactured and analyzed. The manufactured SB-MOSFETs show enhanced drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are comparable with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.
Characterization of erbium-silicided Schottky diode junction
Jang, Moongyu,Kim, Yarkyeon,Shin, Jaeheon,Lee, Seongjae IEEE 2005 IEEE electron device letters Vol.26 No.6
Trap density, lifetime, and the Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted trap density, lifetime, and Schottky barrier height for hole are determined as 1.5×10<SUP>13</SUP> traps/cm<SUP>2</SUP>, 3.75 ms and 0.76 eV, respectively. By using the developed method, the interface of the Schottky diode can be evaluated quantitatively.
Jang, Moongyu,Park, Youngsam,Jun, Myungsim,Hyun, Younghoon,Choi, Sung-Jin,Zyung, Taehyoung Springer 2010 NANOSCALE RESEARCH LETTERS Vol.5 No.10
<P>Silicon nanowires are patterned down to 30 nm using complementary metal-oxide-semiconductor (CMOS) compatible process. The electrical conductivities of n-/p-leg nanowires are extracted with the variation of width. Using this structure, Seebeck coefficients are measured. The obtained maximum Seebeck coefficient values are 122 μV/K for p-leg and −94 μV/K for n-leg. The maximum attainable power factor is 0.74 mW/m K<SUP>2</SUP> at room temperature.</P>
장문규,Jang, Moongyu 한국진공학회 2014 진공 이야기 Vol.1 No.4
Thermolectric devices could convert temperature gradient into electricity (Seebeck effect) and electric power into temperature gradient across the themoelectric element (Peltier effect). $Bi_2Te_3$ has been widely used as thermoelectric material for more than 40 years, due to the superior thermoelctric characteristics. However, Bi and Te materials are predicted to face supply shortage, giving strong necessity for the development of new thermoelctric materials. Based on the theoretical prediction, nanostructure are expected to give dramatic enhnacement of thermoelectirc characteristics by controlling phonon propagation. Thus, silicon, which had been considered as improper material for thermoelectricity, is now being considered as strong cadidate material for thermoelectricity. This review will focus on the nanotechnology applied research activities in silicon as thermoelectric materials.