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Photoconductivity of TlGa0:8Sb0:2S2 single crystals
Moon-SeogJin,Ho-JunSong 한국물리학회 2003 Current Applied Physics Vol.3 No.5
TlGa0:8Sb0:2S2 single crystals were grown by the BridgmanStockbarger method. The phtotoconductivity spectrum of the singlecrystal was measured at 20 K. Four peaks at 504 nm (2.460 eV), 525 nm (2.361 eV), 571 nm (2.171 eV), and 584 nm (2.123 eV) wereobserved in the spectrum. The high intensity-principal peak was observed at 525 nm and was described to be due to its indirectenergy band gap. The peak at 504 nm was described to correspond to the direct energy band gap. The peaks at 571 and 584 nm couldbe attributed to the electron transition from the valence band to the donor levels with the activation energy of 0.186 and 0.234 eV,respectively.. 2003 Elsevier B.V. All rights reserved.
Photoluminescence of GaS:Er3+ Single Crystals
Moon-SeogJin,Choong-IlLee,Nam-OhKim,김화택 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.3
GaS:Er3+ layered single crystals with a hexagonal structure were grown by using the chemical transport reaction method. The photoluminescence spectra of the single crystals were measured at 6 K. Photoluminescence emission peaks were observed in the wavelength region 470 500 nm and were identied as originating from donor-acceptor pair recombinations and phonon replicas. Sharp emission peaks were observed in the wavelength regions 540 570 nm and 650 680 nm and originated from Er3+ sited at the C3v symmetry point.
Optical Properties of BaGa₂S₄: Tm³+ and BaGa₂Se₄: Tm³+ Single Crystals
Sang-AnPark,Moon-SeogJin,Chang-SunYoon,Choong-IlLee,Mi-YangKim,Se-JongBaik,Wha-TekKim 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.6
BaGa2S4: Tm3+ and BaGa2Se4: Tm3+ single crystals were grown by using a chemical transport reaction method. The optical energy gaps of the BaGa2S4: Tm3+ and the BaGa2Se4: Tm3+ single crystals were found to be 4.005 eV and 2.983 eV, respectively, at 11 K. The temperature dependence of the optical energy gap was well tted by the Varshni equation. Sharp emission peaks were observed in the photoluminescence spectra of the single crystals. They were assigned to radiation recombination between split Stark levels of Tm3+.
Mi-YangKim,김화택,Moon-SeogJin,Sang-AnPark,Nam-OhKim,Hyung-GonKim,Seung-CheolHyun,Chang-DaeKim 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.5
Undoped and Co2+-doped BaGa2S4, BaGa2Se4, BaIn2S4, and BaIn2Se4 single crystals were grown by using the chemical transport reaction method. The undoped and the Co2+-doped BaGa2S4 single crystals crystallized into a cubic structure, and the others into an orthorhombic structure. The optical energy gaps were found to be 4.125 eV, 3.372 eV, 3.162 eV, 2.433 eV, 3.057 eV, 2.323 eV, 2.625 eV, and 1.851 eV for the BaGa2S4, BaGa2S4:Co2+, BaGa2Se4, BaGa2Se4:Co2+, BaIn2S4, BaIn2S4:Co2+, BaIn2Se4, and BaIn2Se4:Co2+ single crystals, respectively, at 11 K. The temperature dependence of the optical energy gap was well fitted by the Varshni equation, but an anomalous temperature property was observed for the Co2+-doped single crystals below 50 K.
Mi-YangKim,Se-JongBaik,김화택,Moon-SeogJin,Hyung-GonKim,Sung-HyuChoe,Chang-SunYoon 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.43 No.1
Undoped and $\rm Co^{2+}-$, $\rm Ho^{3+}-$, $\rm Er^{3+}-$, and $\rm Tm^{3+}-$doped $\rm CaGa_{2}S_{4}$, $\rm CaGa_{2}Se_{4}$, $\rm CaIn_{2}S_{4}$, and $\rm CaIn_{2}Se_{4}$ single crystals were grown by using the chemical transport reaction method. The temperature dependence of the optical energy gap was well fitted by the Varshni equation. In the $\rm Co^{2+}-$doped $\rm CaGa_{2}S_{4}$, $\rm CaGa_{2}Se_{4}$, $\rm CaIn_{2}S_{4}$, and $\rm CaIn_{2}Se_{4}$ single crystals, two groups of impurity optical absorption peaks due to $\rm Co^{2+}$ sited in a $\rm T_{d}$ symmetry were observed in the wavelength regions of 600 $\sim$ 900 nm and 1350 $\sim$ 1950 nm at 11 K. In the photoluminescence spectra of the $\rm Ho^{3+}-$, $\rm Er^{3+}-$, and $\rm Tm^{3+}-$doped $\rm CaGa_{2}S_{4}$, $\rm CaGa_{2}Se_{4}$, $\rm CaIn_{2}S_{4}$, and $\rm CaIn_{2}Se_{4}$ single crystals, sharp emission peaks due to transitions between the energy levels of $\rm Ho^{3+}$, $\rm Er^{3+}$, and $\rm Tm^{3+}$ were observed at 11 K.
Photoluminescence Spectra of Ho3+-, Er3+- and Tm3+-doped Zn1?xMgxSe Single Crystals
김화택,Se-Jong Baik,박상안,김남오,Hyung-Gon Kim,Moon-SeogJin 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.46 No.1
Zn1−xMgxSe:Ho3+ (x = 0.093, 0.123, 0.161, 0.235, 0.306, and 0.481), Zn1−xMgxSe:Er3+ (x =0.097, 0.122, 0.158, 0.232, 0.309, and 0.476), and Zn1−xMgxSe:Tm3+ (x = 0.098, 0.120, 0.160,0.234, 0.294, and 0.482) single crystals were grown by using the chemical transport reaction (CTR) method with BN(boron nitride) tubes. The Zn1−xMgxSe:Ho3+, the Zn1−xMgxSe:Er3+, and the Zn1−xMgxSe:Tm3+ single crystals showed a white emission. The dopants Ho3+, Er3+, and Tm3+in the single crystals play an important role to enhance the white emission. We identified the white photoluminescence emissions of the single crystals by measuring their color oordinates.