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The physical simulation of thunderstorm downbursts using an impinging jet
McConville, A.C.,Sterling, M.,Baker, C.J. Techno-Press 2009 Wind and Structures, An International Journal (WAS Vol.12 No.2
This paper outlines the results of a physical simulation (at a 1:700 - 1:1000 geometric scale) of a thunderstorm downburst. Three different methods are examined in order to generate the time dependent nature of a downburst: directly controlling the fans and via two different types of opening apertures. Similarities are shown to exist between each method, although the results obtained from one approach are favoured since they appear to be independent of the downdraft velocity. Significant run-to-run variations between each experiment are discovered and in general it is found beneficial to interpret the results in terms of 10 run ensemble averages. An attempt to simulate a translating downburst is also undertaken and the results are shown to compare favourably with full-scale data.
Hsu-Hsin Chiang,Tzu-Shian Han,David McConville 글로벌지식마케팅경영학회 2014 Global Marketing Conference Vol.2014 No.10
In this paper we explore the relationships between brand-centered human resource management (HRM) and brand citizenship behavior. The roles of person-brand fit and brand commitment are discussed, and seven hypotheses presented. Using multilevel analysis, we test whether these concepts mediate the relationship between brand-centered HRM and brand citizenship behavior.
Ab-Initio Studies of Electronic and Spectroscopic Properties of MgO, ZnO and CdO
A. Schleife,C. R¨odl,J. Furthmuller,F. Bechstedt,P. H. Jefferson,T. D. Veal,C. F. McConville,L. F. J. Piper,A. DeMasi,K. E. Smith,H. Losch,R. Goldhahn,C. Cobet,J. Zuniga-Perez,V. Munoz-Sanjose 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
We present ab-initio calculations of excited-state properties within single-particle and two-particle approaches in comparison with corresponding experimental results. For the theoretical treatment of the electronic structure, we compute eigenvalues and eigenfunctions by using a spatially nonlocal exchange-correlation potential. From this starting point, quasiparticle energies within the fully frequency-dependent G0W0 approximation are obtained. By solving the Bethe-Salpeter equation, we evaluate optical properties, including the electron-hole attraction and the local-field effects. The results are compared with experimental spectra from soft X-ray emission, as well as from X-ray photoelectron spectroscopy or ellipsometry measurements. In more detail, we compute the valenceband densities of states, bound excitons, and the dielectric function. For the latter, we discuss both the absorption edge and higher critical points.
Park, Dae-Sung,Vasheghani Farahani, Sepehr K.,Walker, Marc,Mudd, James J.,Wang, Haiyuan,Krupski, Aleksander,Thorsteinsson, Einar B.,Seghier, Djelloul,Choi, Chel-Jong,Youn, Chang-Ju,McConville, Chris F American Chemical Society 2014 ACS APPLIED MATERIALS & INTERFACES Vol.6 No.21
<P>We investigate the effect of thermally induced phase transformations on a metastable oxide alloy film, a multiphase Be<SUB><I>x</I></SUB>Zn<SUB>1–<I>x</I></SUB>O (BZO), grown on Al<SUB>2</SUB>O<SUB>3</SUB>(0001) substrate for annealing temperatures in the range of 600–950 °C. A pronounced structural transition is shown together with strain relaxation and atomic redistribution in the annealed films. Increasing annealing temperature initiates out-diffusion and segregation of Be and subsequent nucleation of nanoparticles at the surface, corresponding to a monotonic decrease in the lattice phonon energies and band gap energy of the films. Infrared reflectance simulations identify a highly conductive ZnO interface layer (thicknesses in the range of ≈10–29 nm for annealing temperatures ≥800 °C). The highly degenerate interface layers with temperature-independent carrier concentration and mobility significantly influence the electronic and optical properties of the BZO films. A parallel conduction model is employed to determine the carrier concentration and conductivity of the bulk and interface regions. The density-of-states-averaged effective mass of the conduction electrons for the interfaces is calculated to be in the range of 0.31<I>m</I><SUB>0</SUB> and 0.67<I>m</I><SUB>0</SUB>. A conductivity as high as 1.4 × 10<SUP>3</SUP> S·cm<SUP>–1</SUP> is attained, corresponding to the carrier concentration <I>n</I><SUB>Int</SUB> = 2.16 × 10<SUP>20</SUP> cm<SUP>–3</SUP> at the interface layers, and comparable to the highest conductivities achieved in highly doped ZnO. The origin of such a nanoscale degenerate interface layer is attributed to the counter-diffusion of Be and Zn, rendering a high accumulation of Zn interstitials and a giant reduction of charge-compensating defects. These observations provide a broad understanding of the thermodynamics and phase transformations in Be<SUB><I>x</I></SUB>Zn<SUB>1–<I>x</I></SUB>O alloys for the application of highly conductive and transparent oxide-based devices and fabrication of their alloy nanostructures.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2014/aamick.2014.6.issue-21/am5043388/production/images/medium/am-2014-043388_0008.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am5043388'>ACS Electronic Supporting Info</A></P>