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Nanoindentation of Laterally Overgrown Epitaxial Gallium Nitride
M. Martyniuk,G. Parish,H. Marchand,P.T. Fini,S.P DenBaars,L. Faraone 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.2
Nanoindentation has been used to investigate and compare the mechanical properties of GaN grown by the lateral epitaxial overgrowth (LEO) method and the defective seed region prepared by metalorganic chemical vapour deposition. Common modulus of elasticity values (~230 GPa) and hardness values (~19 GPa) were found for both materials. The GaN response to nanoindentation was found to be purely elastic for low inden-tation loads with the onset of plasticity being marked by discontinuities or “pop-in” events in the indenter load-penetration curves. The maximum shear stress under the indenter at pop-in events for LEO GaN cor-responds well with the critical shear stress necessary for homogeneous dislocation nucleation, indicating that the defects in this region are too sparse and do not aid in dislocation nucleation.
p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy
Benyahia, Djalal,Kubiszyn, Lkasz,Michalczewski, Krystian,Keblwski, Artur,Martyniuk, Piotr,Piotrowski, Jozef,Rogalski, Antoni The Institute of Electronics and Information Engin 2016 Journal of semiconductor technology and science Vol.16 No.5
Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with $2^{\circ}$ offcut towards <110> at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as $9{\times}10^{17}cm^{-3}$. In addition, the reduction of GaSb lattice parameter with Be doping was studied.
p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy
Djalal Benyahia,Łukasz Kubiszyn,Krystian Michalczewski,Artur K?błowski,Piotr Martyniuk,Jozef Piotrowski,Antoni Rogalski 대한전자공학회 2016 Journal of semiconductor technology and science Vol.16 No.5
Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with 2° offcut towards 〈110〉 at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as 9×10<SUP>17</SUP> cm<SUP>-3</SUP>. In addition, the reduction of GaSb lattice parameter with Be doping was studied.
Adsorption performance of SO2 over ZnAl2O4 nanospheres
Ling Zhao,Sining Bi,Jiasi Pei,Xinyong Li,Ruihong Yu,Ji Zhao,Christopher J. Martyniuk 한국공업화학회 2016 Journal of Industrial and Engineering Chemistry Vol.41 No.-
A type of uniform ZnAl2O4 nanospheres was selectively synthesized via a facile solvothermalmethod andtheir size was controlled to be 320–450 nm in diameter. It exhibits excellent SO2 adsorption capacity. Both physical structure and surface basicity were determined to play important roles in SO2 adsorptionprocess. In situ FTIR investigation revealed that adsorbed SO2 molecules formed surface bisulfite, sulfite,and bidentate binuclear sulfate. The CO2-TPD results revealed the SO2 adsorption capacity of thecatalysts correlated closely with their basicity sites. The mechanisms for SO2 adsorption andtransformation have been discussed in detail.