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Tak, Young Jun,Yoon, Doo Hyun,Yoon, Seokhyun,Choi, Uy Hyun,Sabri, Mardhiah Muhamad,Ahn, Byung Du,Kim, Hyun Jae American Chemical Society 2014 ACS APPLIED MATERIALS & INTERFACES Vol.6 No.9
<P>We developed a method to improve the electrical performance and stability of passivated amorphous In–Ga–Zn–O thin-film transistors by simultaneous ultraviolet and thermal (SUT) treatment. SUT treatment was carried out on fully fabricated thin-film transistors, including deposited source/drain and passivation layers. Ultraviolet (UV) irradiation disassociated weak and diatomic chemical bonds and generated defects, and simultaneous thermal annealing rearranged the defects. The SUT treatment promoted densification and condensation of the channel layer by decreasing the concentration of oxygen-vacancy-related defects and increasing the concentration of metal–oxide bonds. The SUT-treated devices exhibited improved electrical properties compared to nontreated devices: field-effect mobility increased from 5.46 to 13.36 V·s, sub-threshold swing decreased from 0.49 to 0.32 V/decade, and threshold voltage shift (for positive bias temperature stress) was reduced from 5.1 to 1.9 V.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2014/aamick.2014.6.issue-9/am405818x/production/images/medium/am-2013-05818x_0008.gif'></P>
Tae Soo Jung,Si Joon Kim,Chul Ho Kim,Joohye Jung,Jaewon Na,Sabri, Mardhiah Muhamad,Hyun Jae Kim Institute of Electrical and Electronics Engineers 2015 IEEE transactions on electron devices Vol. No.
<P>Germanium (Ge) doping effects on solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs) were investigated. Ge doping increased the carrier concentration of Ge-doped IZO (Ge: IZO) thin films from 3.32 x 10(14) to 3.13 x 10(15) cm(3) by Ge substitution for zinc (Zn). Ge easily substituted for Zn in the IZO active layer, due to its comparably small atomic radius. By this substitution, Ge doping provided additional valence electrons to the active layer, resulting in a value for the field-effect mobility of a Ge: IZO TFT that was almost two times greater than that of a pristine IZO TFT. Consequently, despite the Ge: IZO TFT being a quaternary system, it displayed a better electrical performance and stability at low processing temperatures, thus demonstrating the feasibility of this device for flexible displays.</P>
Identification of Cryptosporidium from Dairy Cattle in Pahang, Malaysia
Nur Hazirah Hisamuddin,Najat Hashim,Sharmeen Nellisa Soffian,Mohd Hishammfariz Mohd Amin,Ridhwan Abdul Wahab,Mardhiah Mohammad,Muhammad Lokman Md Isa,Afzan Mat Yusof 대한기생충학열대의학회 2016 The Korean Journal of Parasitology Vol.54 No.2
Cryptosporidium, a protozoan parasite, can cause cryptosporidiosis which is a gastrointestinal disease that can infect humans and livestock. Cattle are the most common livestock that can be infected with this protozoan. This study was carried out to determine the prevalence of Cryptosporidium infection in cattle in Kuantan, Pahang, Malaysia and to find out the association between the occurrence of infection and 3 different ages of cattle (calves less than 1 year, yearling, and adult cattle). The samples were processed by using formol-ether concentration technique and stained by modified Ziehl Neelsen. The results showed that 15.9% (24/151) of cattle were positive for Cryptosporidium oocysts. The occurrence of Cryptosporidium in calves less than 1 year was the highest with the percentage of 20.0% (11/55) followed by yearling and adult cattle, with the percentage occurrence of 15.6 % (7/45) and 11.8% (6/51), respectively. There was no significant association between the occurrence and age of cattle and presence of diarrhea. Good management practices and proper hygiene management must be taken in order to reduce the infection. It is highly important to control the infection since infected cattle may serve as potential reservoirs of the infection to other animals and humans, especially animal handlers.
Jung, Joohye,Kim, Si Joon,Jung, Tae Soo,Na, Jaewon,Yoon, Doo Hyun,Sabri, Mardhiah Muhamad,Kim, Hyun Jae Institute of Electrical and Electronics Engineers 2017 IEEE transactions on electron devices Vol.64 No.2
<P>We investigated a novel deoxyribonucleic acid (DNA) sensing system based on low-temperature solution-processed In-Zn-O (IZO) thin-film transistors (TFTs) suggesting an alternative evolutionary line to the traditional DNA biosensors. The IZO TFTs exhibited a favorable microenvironment for adsorbed biomolecule such as DNA to transfer electron, which emerges potential sensing behavior. Superior sensing ability to detect and distinguish 0.45 mu L of 0.1 mu M of target DNA oligomers was secured, and indeed selectivity based on oxidation potentials of each oligomer was achieved. Our IZO TFT had a turn-on voltage (V (ON)) of -1.2 V, on/off ratio of 3.55 x 10(6), and on-current (I (ON)) value of 9.02 mu A in pristine condition. A dry-wet method was applied to immobilize target DNA oligomers on the IZO surface, after which we observed a negative shift of the transfer curve accompanied by a significant increase in the I (ON) and the degradation of the V ON and ON/OFF ratio. Furthermore, the variances in these parameters became increasingly severe following the concentration of target DNA. In addition, the sensing mechanism, oxidation of DNA that had been figured out in our previous research offered selectivity in different types of oligomer based on their capabilities to be oxidized; our biosensors were more sensitive to guanine and cytosine compared with adenine. The biosensor applied on a flexible substrate under the same fabrication conditions obtained exactly analogous sensing behavior. These results suggest a prominent candidate to conventional biosensor area and also its posterior applications by demonstrating remarkable sensitivity, selectivity, and feasibility of flexible device.</P>