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Corrosion Prevention and Development of Inhibitors
Raghavan, M. 한국부식방식학회 2002 Corrosion Science and Technology Vol.31 No.1
The use of corrosion inhibitors is one of the widely adopted methods of corrosion prevention. Research activities over a century have brought tremendous advances in the field of corrosion inhibitors. It is not practically possible to cover the entire spectrum of activib that has taken place over a century. This paper addresses the developmental activities that have taken place in very important sectors like cooling water system, Inhibitors for acid systems, inhibitors in oil and gas production and inhibitors for corrosion in concrete. The application of surface analytical techniques has revolutionized the field of inhibitors. Practically we can get information on the nature of product formed on the metal surface, the composition of the corrosion products, orientation of attachment of corrosion inhibitors etc..
Raghavan, C.M.,Kim, E.S.,Kim, J.W.,Kim, S.S. Elsevier 2013 Ceramics international Vol.39 No.6
<P><B>Abstract</B></P> <P>Pure BiFeO<SUB>3</SUB> and rare earth and transition metal ions co-doped (Bi<SUB>0.9</SUB>Dy<SUB>0.1</SUB>)(Fe<SUB>0.975</SUB>TM<SUB>0.025</SUB>)O<SUB>3±δ</SUB> (TM=Ni<SUP>2+</SUP>, Cr<SUP>3+</SUP> and Ti<SUP>4+</SUP>) thin films were prepared on Pt(111)/Ti/SiO<SUB>2</SUB>/Si(100) substrates by using a chemical solution deposition method. The changes in the microstructure and the electrical properties with doping elements were investigated. The thin films were well crystallized and randomly oriented, with no detectable impurity and secondary phases. The leakage current densities were reduced and the ferroelectric properties were improved in the co-doped thin films. Among the thin films, the (Bi<SUB>0.9</SUB>Dy<SUB>0.1</SUB>)(Fe<SUB>0.975</SUB>Cr<SUB>0.025</SUB>)O<SUB>3</SUB> thin film exhibited well saturated hysteresis loops with remnant polarization (2<I>P</I> <SUB> <I>r</I> </SUB>) of 36μC/cm<SUP>2</SUP> and coercive electric field (2<I>E</I> <SUB> <I>c</I> </SUB>) of 954kV/cm at 1000kV/cm and low leakage current density of 1.91×10<SUP>−5</SUP> A/cm<SUP>2</SUP> at 100kV/cm. The enhanced properties observed in the co-doped thin films could be considered as being the result of the suppression of oxygen vacancies and of the modified microstructure.</P>
Raghavan, C.M.,Kim, J.W.,Song, T.K.,Kim, S.S. Pergamon Press 2016 Materials research bulletin Vol.74 No.-
<P>The structural, electrical and ferroelectric properties of a Mn-doped BiFe0.95Mn0.05O3 (BFMO) thin film grown on a (0 0 l) textured Ge-doped ZnO (GZO)/Si(1 0 0) substrate are reported. The GZO served as a buffer layer for improving the.grain growth and the crystallization of the BFMO thin film. Predominantly, the GZO layer, which promotes the grain growth of the (l 0 0) textured BFMO thin film, was utilized as both top and bottom electrodes to assess the electrical and the ferroelectric properties of the BFMO thin film. A study of the electrical properties revealed a low leakage current density (4.95 x 10(-6) A/cm(2) at 100 kV/cm) and a large stability against electrical breakdown for the GZO/BFMO/GZO capacitor. The ferroelectric study determined a large value for the remnant polarization (2P(r)), 78.37 mu C/cm(2), at an applied electric field of 895 kV/cm for the GZO/BFMO/GZO capacitor. Furthermore, the GZO/BFMO/GZO capacitor showed stable polarization switching even after 1.44 x 10(10) electrical cycles. (C) 2015 Elsevier Ltd. All rights reserved.</P>
Raghavan, C.M.,Choi, J.Y.,Kim, S.S. Ceramurgica ; Elsevier Science Ltd 2016 Ceramics international Vol.42 No.8
In the current study, a series of lanthanide ions, Tm, Yb and Lu, were used for doping at the Bi-site of the Aurivillius phase Na<SUB>0.5</SUB>Bi<SUB>4.5</SUB>Ti<SUB>4</SUB>O<SUB>15</SUB> (NaBTi) to investigate the structural, electrical and ferroelectric properties of the thin films. In this regard, Na<SUB>0.5</SUB>Bi<SUB>4.5</SUB>Ti<SUB>4</SUB>O<SUB>15</SUB> and the rare earth metal ion-doped Na<SUB>0.5</SUB>Bi<SUB>4.0</SUB>RE<SUB>0.5</SUB>i<SUB>4</SUB>O<SUB>15</SUB> (RE=Tm, Yb and Lu, denoted by NaBTmTi, NaBYbTi, and NaBLuTi, respectively) thin films were deposited on Pt(111)/Ti/SiO<SUB>2</SUB>/Si(100) substrates by using a chemical solution deposition method. Formations of the Aurivillius phase orthorhombic structures for all the thin films were confirmed by X-ray diffraction and Raman spectroscopic studies. Based on the experimental results, the rare earth metal ion-doped Na<SUB>0.5</SUB>Bi<SUB>4.0</SUB>RE<SUB>0.5</SUB>Ti<SUB>4</SUB>O<SUB>15</SUB> thin films exhibited a low leakage current and the improved ferroelectric properties. Among the thin films, the NaBLuTi thin film exhibited a low leakage current density of 6.96x10<SUP>-7</SUP>A/cm<SUP>2</SUP> at an applied electric field of 100kV/cm and a large remnant polarization (2P<SUB>r</SUB>) of 26.7μC/cm<SUP>2</SUP> at an applied electric field of 475kV/cm.