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Jeon, Kun-Rok,Min, Byoung-Chul,Park, Seoung-Young Institute of Pure and Applied Physics 2017 Japanese Journal of Applied Physics Vol. No.
<P>Electrical spin accumulation that was robust against changes in temperature and bias voltage was achieved in epitaxial Co70Fe30/MgO tunnel contacts to p-type Ge, with negligible Schottky barrier formation. Hanle and inverted Hanle effects, which are characteristic features of non-equilibrium spin accumulation in the tunnel contacts, were clearly observed up to room temperature for both hole spin injection and extraction. Notably, the obtained spin signal showed weak temperature dependence even at a low bias voltage, and symmetric behavior with respect to bias polarity, which are inconsistent with spin-polarized tunneling via localized states in the contact. (c) 2017 The Japan Society of Applied Physics</P>
Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature
Jeon, Kun-Rok,Min, Byoung-Chul,Jo, Young-Hun,Lee, Hun-Sung,Shin, Il-Jae,Park, Chang-Yup,Park, Seung-Young,Shin, Sung-Chul American Physical Society 2011 Physical review. B, Condensed matter and materials Vol.84 No.16
Voltage tuning of thermal spin current in ferromagnetic tunnel contacts to semiconductors
Jeon, Kun-Rok,Min, Byoung-Chul,Spiesser, Aurelie,Saito, Hidekazu,Shin, Sung-Chul,Yuasa, Shinji,Jansen, Ron Nature Publishing Group, a division of Macmillan P 2014 NATURE MATERIALS Vol.13 No.4
Spin currents are paramount to manipulate the magnetization of ferromagnetic elements in spin-based memory, logic and microwave devices, and to induce spin polarization in non-magnetic materials. A unique approach to create spin currents employs thermal gradients and heat flow. Here we demonstrate that a thermal spin current can be tuned conveniently by a voltage. In magnetic tunnel contacts to semiconductors (silicon and germanium), it is shown that a modest voltage (~200 mV) changes the thermal spin current induced by Seebeck spin tunnelling by a factor of five, because it modifies the relevant tunnelling states and thereby the spin-dependent thermoelectric parameters. The magnitude and direction of the spin current is also modulated by combining electrical and thermal spin currents with equal or opposite sign. The results demonstrate that spin-dependent thermoelectric properties away from the Fermi energy are accessible, and open the way towards tailoring thermal spin currents and torques by voltage, rather than material design.