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Effects on Optical Characteristics of GaN Polarity Controlled by Substrate
Kang, Sang-Won,Shim, Hyun-Wook,Lee, Dong-Yul,Han, Sang-Heon,Kim, Dong-Joon,Kim, Je-Won,Oh, Bang-Won,Kryliouk, Olga,Anderson, Timothy J. The Institute of Electronics and Information Engin 2006 Journal of semiconductor technology and science Vol.6 No.2
N-polar, Ga-polar, and non-polar GaN was grown by MBE and MOVPE using various substrates and influence of polarity has been investigated. The GaN growth by MOVPE is along cplane (0001), c-plane (0001), and a-plane (11-20) direction on c-plane (0001), a-plane (11-20) and r-plane (1-102) sapphire substrate respectively. The polarity of the film has a strong influence on the morphology and the optical properties of PA-MBE grown As-doped GaN layers. Strong blue emission from As-doped GaN was observed only in the case of N-polarity (000-1) layers, which was attributed to the highest concentration of Ga dangling bonds for this polarity of a GaN surface.
Effects on Optical Characteristics of GaN Polarity Controlled by Substrate
Sang Won Kang,Hyun Wook Shim,Dong-Yul Lee,Sang-Heon Han,Dong Joon Kim,Je Won Kim,Bang Won Oh,Olga Kryliouk,Timothy J. Anderson 대한전자공학회 2006 Journal of semiconductor technology and science Vol.6 No.2
N-polar, Ga-polar, and non-polar GaN was grown by MBE and MOVPE using various substrates and influence of polarity has been investigated. The GaN growth by MOVPE is along cplane (0001), c-plane (0001), and a-plane (11-20) direction on c-plane (0001), a-plane (11-20) and rplane (1-102) sapphire substrate respectively. The polarity of the film has a strong influence on the morphology and the optical properties of PA-MBE grown As-doped GaN layers. Strong blue emission from As-doped GaN was observed only in the case of N-polarity (000-1) layers, which was attributed to the highest concentration of Ga dangling bonds for this polarity of a GaN surface.