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Kim, M.,Kim, J.,Lee, Y.J.,Ju, M.,Park, C.,Balaji, N.,Lee, S.,Kim, J.,Yi, J. North-Holland 2014 Materials letters Vol.116 No.-
The high sheet resistance (R<SUB>s</SUB>) solar cells with ITO full contact suffer from low open circuit voltage (V<SUB>oc</SUB>) with a negligible/no passivation effect. To overcome this, we approached ITO local line contact with SiO<SUB>2</SUB> passivation to reduce the recombination loss. Passivation area increases to 91.29%. The improvement in carrier lifetime, V<SUB>oc,</SUB> reveals the melioration in passivation. With high R<SUB>s</SUB> emitter, the ITO full contact solar cell results in efficiency of 16.26% whereas the ITO local line contact solar cell results in 17.15%.
Electrochemical properties of non-aqueous electrolytes containing spiro-type ammonium salts
Kim, M.,Kim, S. Korean Society of Industrial and Engineering Chemi 2014 Journal of industrial and engineering chemistry Vol.20 No.6
Electrochemical properties of organic solvent electrolytes containing salt additive were investigated by means of cyclic voltammetry, ionic conductivity and charge-discharge curve. The electrolyte was prepared by a mixture of propylene carbonate (PC) and dimethyl carbonate (DMC), tetraethylammonium tetrafluoroborate (TEABF<SUB>4</SUB>) and spiro-1,1'-bipyrolidinium tetrafluoroborate (SBPBF<SUB>4</SUB>) as a salt additive. The aim of this paper is to evaluate the effect of spiro-type quaternary ammonium salt on electrochemical properties. The bulk resistance of the mixture electrolytes and interfacial resistance were investigated using an AC impedance method. The result shows that SBPBF<SUB>4</SUB> has good solubility in PC/DMC and the ionic conductivity is comparable to TEABF<SUB>4</SUB> in PC/DMC. From the experimental results, by using the SBPBF<SUB>4</SUB> salt, the interfacial resistance was decreased and capacity and ionic conductivity were increased. These results may be due to the higher mobility or ion dissociation of the SBP cation with smaller ion size than the TEA cation against the meso- or micro-pores of the activated carbons electrode.
Impact of laser pulse width on laser ablation process of high performance PERC cells
Kim, M.,Kim, D.,Kim, D.,Kang, Y. Association for Applied Solar Energy ; Elsevier Sc 2014 SOLAR ENERGY -PHOENIX ARIZONA THEN NEW YORK- Vol.110 No.-
This study quantitatively compares the characteristics of ablation processes using nanosecond (ns) and picosecond (ps) pulse width green (532nm) lasers. The laser ablation results are analyzed using Electron Probe Micro Analyzer (EPMA), quasi-steady-state photo-conductance (QSSPC) measurements and transmission electron microscopy (TEM). The ablated using the ns green laser is predominantly melted, due to the relatively longer pulse width, and laser damage is incurred to a depth of 2.5μm. Meanwhile, the laser ablation using the ps green laser precisely removes the thin layers on the surface without severely melting the sample and the observed laser damage depth is almost negligible. However, since the maximum damage depth (~2.5μm) using the ns laser is much shallower than the local contact depth (10-17μm), the passivated emitter and rear cell (PERC) efficiencies using the ns and ps pulse width lasers converge to a power conversion efficiency of 19.4%.
Latch-based FPGA emulation method for design verification: case study with microprocessor
Kim, M,Kong, J,Suh, T,Chung, S W IET 2011 Electronics letters Vol.47 No.9
<P>Using latches in a digital design is considered wrong owing to the timing issue. Field-programmable gate array (FPGA) vendors also recommend flip-flops instead of latches in emulation. In this reported work, however, the usefulness and benefit of utilising latches in FPGA emulation for processor design verification is demonstrated. The study shows that a latch-based register file provides the seamless capability of functionality validation, whereas the flip-flop based one requires modification to the original design, potentially harming the completeness of functional verification. Experiment results with Xilinx and Altera devices show marginal differences in terms of emulation performance and area requirement in both approaches. This study reveals that replacing SRAM with latches rather than flip-flops is appealing and preferable in emulation with FPGAs.</P>
Kim, M.,Liu, H.,Kim, J.T.,Yoo, C. Elsevier Scientific Pub. Co 2014 Journal of hazardous materials Vol.278 No.-
Sensor faults in metro systems provide incorrect information to indoor air quality (IAQ) ventilation systems, resulting in the miss-operation of ventilation systems and adverse effects on passenger health. In this study, a new sensor validation method is proposed to (1) detect, identify and repair sensor faults and (2) evaluate the influence of sensor reliability on passenger health risk. To address the dynamic non-Gaussianity problem of IAQ data, dynamic independent component analysis (DICA) is used. To detect and identify sensor faults, the DICA-based squared prediction error and sensor validity index are used, respectively. To restore the faults to normal measurements, a DICA-based iterative reconstruction algorithm is proposed. The comprehensive indoor air-quality index (CIAI) that evaluates the influence of the current IAQ on passenger health is then compared using the faulty and reconstructed IAQ data sets. Experimental results from a metro station showed that the DICA-based method can produce an improved IAQ level in the metro station and reduce passenger health risk since it more accurately validates sensor faults than do conventional methods.
Kim, M.,Kim, D.,Kim, D.,Kang, Y. Association for Applied Solar Energy ; Elsevier Sc 2014 SOLAR ENERGY -PHOENIX ARIZONA THEN NEW YORK- Vol.108 No.-
A highly efficient passivated emitter and rear cell(PERC) was fabricated using a picosecond (ps) pulse width laser ablation system. To evaluate the applicability of the laser ablation process to remove dielectric layers, the laser-induced damage was thoroughly analyzed using TEM and Raman spectroscopy. At the optimized laser intensity, passivation layers such as SiNx and Al<SUB>2</SUB>O<SUB>3</SUB> were well ablated and laser damage was suppressed. In this case, only a thin layer of amorphous silicon of 30 A in thickness was formed but recrystallized domains or dislocations were not observed underneath the processed region. At excessive irradiation powers, the dislocation density significantly increased under the ablated spot. As a result, as the laser irradiation energy increased from 3.2W to 9.6W, the cell efficiency linearly decreased from 19.35% to 19.04%.