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Effectiveness of full spectrum light soaking on solar cell degradation analysis
박상현,SeJin Ahn,곽지혜,Keeshik Shin,Seoung Kyu Ahn,Kyung Hoon Yoon,Yunae Cho,김동욱,Jae Ho Yun 한국물리학회 2013 Current Applied Physics Vol.13 No.8
This study examined the effect of UV-spectrum light soaking on solar cell degradation tests. An indoor light soaking test was evaluated over three different spectral ranges: “UV only”, “UV blocked” and “Full spectrum”. a-Si:H and poly-crystalline silicon solar cell technologies were studied by light soaking tests with the same optical filter configurations. The IeV measurement results demonstrated that “UV only” irradiated solar cells exhibited the smallest output power degradation, which was only half of a percent variation compared with the full spectrum light soaking case. Using a filter that excluded the effect of the UV spectral range on light soaking, the “UV blocked” case also exhibited a significant output power degradation of the solar cells. A comparative analysis of the solar cell response, based on the IeV characteristics and the diode ideality factor under these different light soaking spectra, demonstrated the importance of the full spectrum light soaking test in the evaluation of the long-term performance of solar cells.
Moon, Dong Gwon,Yun, Jae Ho,Gwak, Jihye,Ahn, SeungKyu,Cho, Ara,Shin, Keeshik,Yoon, Kyunghoon,Ahn, SeJin The Royal Society of Chemistry 2012 ENERGY AND ENVIRONMENTAL SCIENCE Vol.5 No.12
<P>We report a new approach to fabricating Cu(In,Ga)Se<SUB>2</SUB> (CIGSe) light absorbing layers for thin film solar cells without Ga segregation using a sputtering and single-step selenization process. To mitigate Ga segregation at the CIGSe/back-contact region, which has frequently been observed in the selenization of metal/alloy precursor layers, we used Se-containing precursor layers (Cu-In-Ga-Se) to capture Ga in covalently bonded structures and investigated the effects of Se content in the precursor layers on the properties of the selenized CIGSe films and the devices. As the Se content in the precursor layer increased, Ga segregation was significantly mitigated, resulting in a completely homogenized Ga distribution when the Se/metal ratio of the precursor films is over 0.8. Finally, a thin CIGSe film (∼670 nm) with a uniform Ga distribution was processed to fabricate a solar cell, and the device exhibited a conversion efficiency of 11.7% with an open circuit potential of 0.6 V. An increase of the CIGSe film thickness to 1.55 μm resulted in a device efficiency of up to 13.16%.</P> <P>Graphic Abstract</P><P>A new approach to fabricating Cu(In,Ga)Se<SUB>2</SUB> thin films without Ga segregation using a sputtering and single-step selenization process. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c2ee22804a'> </P>
Ahn, Sejin,Son, Tae Hwa,Cho, Ara,Gwak, Jihye,Yun, Jae Ho,Shin, Keeshik,Ahn, Seoung Kyu,Park, Sang Hyun,Yoon, Kyunghoon Wiley-VCH 2012 CHEM SUS CHEM Vol.5 No.9
<P>A simple direct solution coating process for forming CuInSe??? (CIS) thin films was described, employing a low-cost and environmentally friendly precursor solution. The precursor solution was prepared by mixing metal acetates, ethanol, and ethanolamine. The facile formation of a precursor solution without the need to prefabricate nanoparticles enables a rapid and easy processing, and the high stability of the solution in air further ensures the precursor preparation and the film deposition in ambient conditions without a glove box. The thin film solar cell fabricated with the absorber film prepared by this route showed an initial conversion efficiency of as high as 7.72???%.</P>
CZTSe Thin Film Growth via a Co-evaporation Process Using a ZnSe Effusion Source
곽지혜,Sunghun Jung,Sang Hyun Park,안세진,조아라,Keeshik Shin,Kyung Hoon Yoon,Jae Ho Yun 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.2
The compositional distribution of elements is known to be significant for the high conversion efficiency of CZTSe solar cells. As detailed understanding of the Cu/(Zn+Sn) ratio in the light absorption layer is important,Cu2ZnSnSe4 (CZTSe) films grown via the co-evaporation process under different copper fluxes were char-acterized. It is difficult to evaluate the Cu content effect on the properties of CZTSe films grown using a co-evaporation process with Cu, Zn, Sn, and Se elemental effusion sources because the Cu flux variation during the process also induces other element ratio changes. Furthermore, the Zn/Sn ratio shows significant correlation to the Cu/(Zn+Sn) ratio variation in CZTSe thin films. Replacing the zinc metal effusion source with the ZnSe compound source resulted in less fluctuation in the Zn/Sn variation according to Cu flux change during the CZTSe co-evaporation. This can be useful in evaluating the effect of the different Cu ratios on the CZTSe solar cell characteristics.
Kim, Kyunhwan,Eo, Young-Joo,Cho, Ara,Gwak, Jihye,Yun, Jae Ho,Shin, Keeshik,Ahn, Seoung Kyu,Park, Sang Hyun,Yoon, Kyunghoon,Ahn, SeJin The Royal Society of Chemistry 2012 Journal of materials chemistry Vol.22 No.17
<P>CuInSe<SUB>2</SUB> (CIS) absorber layers for thin film solar cells were fabricated <I>via</I> a non-vacuum route using amorphous Cu–In–Se nanoparticle precursors prepared by a low temperature colloidal process within one minute of reaction without any external heating. In particular, we intentionally added a chelating agent to the nanoparticle colloid in order to increase the density of the final films by enhancing the viscous flow of precursor materials during high temperature selenization. This is based on the decreased reactivity of precursor particles due to the formation of chelate complexes at particle surfaces. While the CIS films formed from the amorphous Cu–In–Se particles without surface modification were found to have large voids, those formed from surface modified particles showed flat and dense morphologies. In accordance with the improvements in the film morphology and density, efficiencies of the devices were also significantly increased from 0% (complete short circuit in the case without surface modification) to 4.41% (with surface modification).</P> <P>Graphic Abstract</P><P>A novel process for forming dense CIS films from amorphous Cu–In–Se nanoparticles chelated with ethanolamine was suggested. By this approach, a cell efficiency of up to 4.41% was demonstrated. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c2jm16555d'> </P>