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Kalinin, Sergei V,Kim, Yunseok,Fong, Dillon D,Morozovska, Anna N IOP 2018 Reports on progress in physics Vol.81 No.3
<P>For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase <I>per se</I> necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical–electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this.</P>
Roman E. Kalinin,Igor A. Suchkov,Nina D. Mzhavanadze,Olga N. Zhurina,Emma A. Klimentova,Vladislav O. Povarov 대한혈관외과학회 2021 Vascular Specialist International Vol.37 No.3
Purpose: We aimed to evaluate the impact of intrinsic coagulation factors and hemostatic markers of endothelial dysfunction on complications in patients with atherosclerotic peripheral arterial disease (PAD). Materials and Methods: This prospective study enrolled 120 PAD patients at Fontaine stages 2b to 3 who underwent open surgical, endovascular, or conservative treatment. Coagulation factors (FVIII, FIX, and FXI) and endothelial hemostatic markers, including von Willebrand factor (vWF) activity and level, soluble endothelial protein C receptor, and plasminogen activator inhibitor-1 (PAI-1) levels, were assessed. Results: At 3 months after open bypass grafting, activity of FVIII significantly increased from a median of 175% to 233% (P<0.001). At 3 months after endovascular treatment, the activities of FVIII, FIX, and FXI significantly increased from medians of 157%, 180%, and 156% to 184%, 218%, and 181%, respectively (P<0.05). Six patients with increased FVIII activity developed bypass graft thrombosis. Four patients in the endovascular group and three patients in the conservative treatment group with increased activity of vWF developed myocardial infarction (P=0.049). The subjects who developed restenosis had increased vWF activity (P=0.023) and decreased nitric oxide metabolite levels (P=0.003). Three subjects who received conservative treatment and developed PAD progression at 12 months had increased PAI-1 activity (P=0.028). Conclusion: Patients with advanced PAD had a hypercoagulable status, and performance of open or endovascular revascularization was associated with further hypercoagulability. Increased activity of coagulation factors and altered levels of hemostatic markers of endothelial dysfunction were associated with PAD complications such as graft thrombosis, myocardial infarction, disease progression, and restenosis.
Chang, Hye Jung,Kalinin, Sergei V.,Morozovska, Anna N.,Huijben, Mark,Chu, Ying‐,Hao,Yu, Pu,Ramesh, Ramamoorthy,Eliseev, Evgeny A.,Svechnikov, George S.,Pennycook, Stephen J.,Borisevich, Albina Y WILEY‐VCH Verlag 2011 Advanced Materials Vol.23 No.21
<P><B>Direct atomic displacement mapping at ferroelectric interfaces</B> by aberration corrected scanning transmission electron microscopy(STEM) (a‐STEM image, b‐corresponding displacement profile) is combined with Landau‐Ginsburg‐Devonshire theory to obtain the complete interface electrostatics in real space, including separate estimates for the polarization and intrinsic interface charge contributions. </P>
Massive Localized Abdominal Lymphedema: A Case Report with Literature Review
Gogia Badri,Chekmareva Irina,Leonova Anastasiia,Alyautdinov Rifat,Karmazanovsky Grigory,Glotov Andrey,Kalinin Dmitry 대한성형외과학회 2023 Archives of Plastic Surgery Vol.50 No.6
Massive localized lymphedema (MLL) is a rare disease caused by the obstruction of lymphatic vessels with specific clinical morphological and radiological characteristics. People with morbid obesity are mainly affected by MLL. Lymphedema is easily confused with soft tissue sarcoma and requires differential diagnosis, both the possibility of an MLL and also carcinoma manifestations in the soft tissues. The possible causes of massive lymphedema include trauma, surgery, and hypothyroidism. This report is the first case of MLL treated surgically in the Russian Federation. Detailed computed tomography (CT) characteristics and an electron microscope picture of MLL are discussed. A 50-year-old woman (body mass index of 43 kg/m2) with MLL arising from the anterior abdominal wall was admitted to the hospital for surgical treatment. Its mass was 22.16 kg. A morphological study of the resected mass confirmed the diagnosis of MLL. We review etiology, clinical presentation, diagnosis, and treatment of MLL. We also performed an electron-microscopic study that revealed interstitial Cajal-like cells telocytes not previously described in MLL cases. We did not find similar findings in the literature. It is possible that the conduction of an ultrastructural examination of MLL tissue samples will further contribute to the understanding of MLL pathogenesis.
White, G. R.,Ainsworth, R.,Akagi, T.,Alabau-Gonzalvo, J.,Angal-Kalinin, D.,Araki, S.,Aryshev, A.,Bai, S.,Bambade, P.,Bett, D. R.,Blair, G.,Blanch, C.,Blanco, O.,Blaskovic-Kraljevic, N.,Bolzon, B.,Boog American Physical Society 2014 Physical Review Letters Vol.112 No.3
<P>A novel scheme for the focusing of high-energy leptons in future linear colliders was proposed in 2001 [P. Raimondi and A. Seryi, Phys. Rev. Lett. 86, 3779 (2001)]. This scheme has many advantageous properties over previously studied focusing schemes, including being significantly shorter for a given energy and having a significantly better energy bandwidth. Experimental results from the ATF2 accelerator at KEK are presented that validate the operating principle of such a scheme by demonstrating the demagnification of a 1.3 GeV electron beam down to below 65 nm in height using an energy-scaled version of the compact focusing optics designed for the ILC collider.</P>
Localised nanoscale resistive switching in GaP thin films with low power consumption
Kurnia, F.,Liu, C.,Liu, G.,Vasudevan, R.,Yang, S.,Kalinin, S.,Valanoor, N.,Hart, J. Royal Society of Chemistry 2017 Journal of materials chemistry. C, Materials for o Vol.5 No.8
<P>Nanoscale localisation of the electroforming-free resistive switching (RS) behaviour in polycrystalline GaP thin films has been observed for the first time. A combination of conductive atomic force microscopy and first-order reversal curve current-voltage measurements indicated that the grain boundaries are the preferred sites for the formation of the conductive switching filaments. It is proposed, based on TEM and XPS results, that local electrochemical migration of Ga ions along the grain boundaries plays a critical role in the switching mechanism. In the low-resistance (ON) state, the conduction mechanism was found to be the space-charge-limited current mechanism, while the high-resistance (OFF) state was governed by the Frenkel-Poole mechanism. A high OFF/ON resistance ratio (similar to 10(4)) and lower power consumption than current RS devices, in addition to the easy integration of GaP with silicon substrates, make these GaP films promising for future applications in future non-volatile resistive random access memory (RRAM).</P>