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김홍배,곽계달 淸州大學校 1984 論文集 Vol.17 No.2
To analysis Drain currents of polycrystalline semiconductor thin film transistor (TFT) condsidering the effect of grain boundary condition, new approach will be suggested. And the results of comparing between polycrystalline TFT phenomenon in always smaller the drain currents of polycrystalline semiconductor TFT than those of monocrystalline semiconductor TFT.
Bipolar-mode Static Induced Transistor(SIT) 소자 설계에 관한 연구
손상희,김홍배,박찬석,곽계달 청주대학교 산업과학연구소 1993 産業科學硏究 Vol.11 No.-
BSIT is simulated in two-dimensional and simulation results are compared with those of experimental device. To get the accurate design data of BSIT, device operation, carrier dynamics depending on channel impurity concentration and current flows depending on gate depth are examined through two-dimensional numerical simulation. Also, conductivity modulation effect in saturation-mode is analyzed from the distribution of minority carrier and electric field. Through the above procedure, the design procedure of SIT will be more effective.
FBG(Fiber Bragg Grating) Hydrophone 에서 Passive Band-Pass Filter 를 사용한 다중점 신호 검출에 관한 연구
곽계달,김경복 한국센서학회 2000 센서학회지 Vol.9 No.4
To set up the arrays system of FBG(Fiber Bragg Grating) Hydrophone sensor and realize the multi-point signal detection for the wide scope underwater, using WDM(Wavelength Division Multiplexing) method and Passive band-pass filter system, underwater acoustic signal detection of the newly designed two FBG Transducers is successfully experimented. As a result of the experiment, it was possible each signal with different frequent signals is detected for the multi-point up to 1.3KHz in underwater. We can, therefore, prove the possibility on the system design of Hydrophone sensor arrays, using the newly made FBG Transducers.
곽계달,김경복 한국센서학회 2000 센서학회지 Vol.9 No.4
For the improvement of frequency characteristics of FBG(Fiber Bragg Grating) hydrophone sensor, we can detected the frequency ranging to 1.4KHz and acoustic directivity by the development of newly designed diaohragm and united tvoe of FBG.
A Multi-Point Sense Amplifier and High-Speed Bit-Line Scheme for Embedded SRAM
Chang, Il-Kwon,Kwack, Kae-Dal The Korean Institute of Electrical Engineers 1998 Journal of Electrical Engineering and Information Vol.3 No.3
This paper describes new sense amplifier with fast sensing delay time of 0.54ns and 32kb CMOS embedded SRAM with 4.67 ns access time for a 3-V power supply. It was achieved using the sense amplifier with multiple point sensing scheme and highs peed bit-line scheme. The sense amplifier saves 25% of the power dissipation compared with the conventional one while maintaining a very short sensing delay. The SRAM uses 0.5m double-polysilicon and triple-metal CMOS process technology. A die size is 1.78${\times}$mm2.13mm.
경피적 신루설치술을 시행한 15명의 부인암 환자에 대한 임상적 고찰
선우 재근,김달수,남계현,이권해,조태호 순천향대학교 1994 논문집 Vol.17 No.2
Percutaneous nephrostomy is a useful method of supravesical diversion when ureteral obstruction occurs at initial diagnosis of gynecologic cancer or recurrence of disease. Over a 5-year period, 15 patients with previously treated carcinoma of the cervix developed bilateral ureteral obstruction that was treated with paliative urinary diversion. Various factors affecting survival and complication are examined, and guidelines for patient selection are offered. In conclusion, mean survival time was 13 weeks and survival rate are not improved. The recovery of renal failure were found at 6,5 days during the percutaneous nephrostomy states. And severe complication are rare in this procedure.
박장우,곽계달,박광민 순천향대학교 1993 논문집 Vol.16 No.3
In this paper, two dimensonal numercial simulations of short channel MOSFETs are performed. The drift-diffusion model as physical model and the control volume formulation method as discretization method are used. To verify the validity of this paper, the calculated I-V characteristics are compared with experimental data. To study short channel effect, MOSFET with gate length of 0.5㎛ is analyzed with two dimensional numerical simulation. The potential distributions, the electron concentration distribution and the hole concentration distributions in MOSFETs are shown with the various applied voltages. Also, to investigate the characteristics of MOSFET with the various gate lengths. MOSFETs with gate length of 0.5㎛,1.3 ㎛, 2.0 ㎛ are simulated, and the potential distributions are shown.
Jae-Hong Choi,Kae-Dal Kwack 한국정보과학회 1997 Journal of Electrical Engineering and Information Vol.2 No.4
The new classified model for N-p heterojunction diode is derived and used extensively in analyzing the current-voltage(Ⅰ-Ⅴ) characteristics of the HBTs. A new classification method is presented in order to simplifyⅠ-Ⅴ equations and easily applied to the modeling of HBTs. This classification method is characterized by the properties of devices such as the high level injection, the thickness of one or both bulk regions, the surface recombination and the generation-recombination. The simulation results using the proposed model agree well with the experimentally observed Ⅰ-Ⅴ behaviors and show good efficiencies in its application to HBTs with respect to mathematical formulation.