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Effect of Cu Layer Thickness on Giant Magnetoresistance Properties of NiCoFe/Cu/NiCoFe Sandwich
Mitra Djamal,Ramli,Yulkifli,Khairurrijal 제어로봇시스템학회 2009 제어로봇시스템학회 국제학술대회 논문집 Vol.2009 No.8
The NiCoFe/Cu/NiCoFe sandwiches were grown onto Si (111) substrate by dc-opposed target magnetron sputtering (dc-OTMS) technique. The growth parameters are: temperature 100 <SUP>0</SUP>C, applied voltage 600 volt, flow rate of Ar gas 100 sccm, and growth pressure 5.2 x10<SUP>-1</SUP> Torr. The effects of Cu layer thickness on giant magnetoresistance (GMR) property of NiCoFe/Cu/NiCoFe sandwich were studied. We have found that the giant magnetoresistance (GMR) ratio is varied depend on the non-magnetic (Cu) layer thickness. The variation of Cu layer thickness of NiCoFe/Cu/NiCoFe sandwich presents an oscillatory behavior of GMR ratio. This oscillation reflects the exchange coupling oscillations between ferromagnetic and antiferromagnetic states, which are caused by an oscillation in the sign of the interlayer exchange coupling between ferromagnetic layers.
MASTURI,MAHARDIKA PRASETYA AJI,HASNIAH ALIAH,EUIS SUSTINI,KHAIRURRIJAL,MIKRAJUDDIN ABDULLAH 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2013 NANO Vol.8 No.1
A model for explaining deviations of positions in self-organized nanoparticles on a substrate from their corresponding positions in perfect organization is proposed. The model predictions were compared with SEM/TEM images and reported by some authors. We found a consistence between the model predictions with the data of Ag, Fe3O4 and SiO2 nanoparticles organization on various substrates.
Modeling of Armchair Graphene Nanoribbon Tunnel Field Effect Transistors for Low Power Applications
E. Suhendi(Endi Suhendi),L. Hasanah(Lilik Hasanah),F. A. Noor(Fatimah Arofiati Noor),N. Kurniasih(Neny Kurniasih),Khairurrijal 대한전자공학회 2019 Journal of semiconductor technology and science Vol.19 No.4
Characteristics of an armchair graphene nanoribbon tunnel field effect transistor (AGNRTFET) were modeled quantum mechanically. The transport equation in the AGNR-TFET was solved by using the Dirac-like equation. The potential profile in the AGNR-TFET was determined by solving the Dirac-like equation and the self-consistent Poisson equation. The transfer matrix method (TMM), as a numerical approach, and the Landauer formula were used to calculate the electron transmittance and the tunneling current respectively. The threshold voltage of the device was around 0.01 V. The effect of the AGNR-TFET’s geometry, i.e. width and length of AGNR and oxide thickness, on the tunneling current and the subthreshold swing was also analyzed. It was found that the tunneling current increased with an increase of the width of the AGNR and the oxide thickness while increasing the length of the AGNR made the tunneling current decrease. According to the simulation results, the subthreshold swing of the device can achieve 5 mV/dec. Moreover, the AGNRTFET geometry affects the subthreshold swing of the device.