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Monika Bhattacharya,Jyotika Jogi,R.S.Gupta,Mridula Gupta 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.4
In the present work, the effect of the gate-to-drain capacitance (Cgd on the noise performance of a symmetric tied-gate In 0.52AI 0.48As/In 0.53Ga 0.47As double-gate HEMT is studied using an accurate charge control based approach. An analytical expression for the gate-to-drain capacitance is obtained. In terms of the intrinsic noise sources and the admittance parameters (Y 11 and Y 21 which are obtained incorporating the effect of C gd, the various noise performance parameters including the Minimum noise figure and the Minimum Noise Temperature are evaluated. The inclusion of gate-to-drain capacitance is observed to cause significant reduction in the Minimum Noise figure and Minimum Noise Temperature especially at low values of drain voltage, thereby, predicting better noise performance for the device.
Bhattacharya, Monika,Jogi, Jyotika,Gupta, R.S.,Gupta, Mridula The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.4
In the present work, the effect of the gate-to-drain capacitance ($C_{gd}$) on the noise performance of a symmetric tied-gate $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ double-gate HEMT is studied using an accurate charge control based approach. An analytical expression for the gate-to-drain capacitance is obtained. In terms of the intrinsic noise sources and the admittance parameters ($Y_{11}$ and $Y_{21}$ which are obtained incorporating the effect of $C_{gd}$), the various noise performance parameters including the Minimum noise figure and the Minimum Noise Temperature are evaluated. The inclusion of gate-to-drain capacitance is observed to cause significant reduction in the Minimum Noise figure and Minimum Noise Temperature especially at low values of drain voltage, thereby, predicting better noise performance for the device.
Quantum Modeling of Nanoscale Symmetric Double-Gate InAIAs/InGaAs/InP HEMT
Neha Verma,Mridula Gupta,R.S. Gupta,Jyotika Jogi 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.4
The aim of this work is to investigate and study the quantum effects in the modeling of nanosclae symmetric double-gate InAIAs/InGaAs/InP HEMT (High Electron Mobility Transistor). In order to do so, the carrier concentration in InGaAs channel at gate lengths (Lg 100 ㎚ and 50㎚, are modelled by a density gradient model or quantum moments model. The simulated results obtained from the quantum moments model are compared with the available experimental results to show the accuracy and also with a semi-classical model to show the need for quantum modeling. Quantum modeling shows major variation in electron concentration profiles and affects the device characteristics. The tow triangular quantum wells predicted by the semi-classical model seem to vanish in the quantum model as bulk inversion takes place. The quantum effects thus become essential to incorporate in nanosclae heterostructure device modeling.
Quantum Modeling of Nanoscale Symmetric Double-Gate InAlAs/InGaAs/InP HEMT
Verma, Neha,Gupta, Mridula,Gupta, R.S.,Jogi, Jyotika The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.4
The aim of this work is to investigate and study the quantum effects in the modeling of nanoscale symmetric double-gate InAlAs/InGaAs/InP HEMT (High Electron Mobility Transistor). In order to do so, the carrier concentration in InGaAs channel at gate lengths ($L_g$) 100 nm and 50 nm, are modelled by a density gradient model or quantum moments model. The simulated results obtained from the quantum moments model are compared with the available experimental results to show the accuracy and also with a semi-classical model to show the need for quantum modeling. Quantum modeling shows major variation in electron concentration profiles and affects the device characteristics. The two triangular quantum wells predicted by the semi-classical model seem to vanish in the quantum model as bulk inversion takes place. The quantum effects thus become essential to incorporate in nanoscale heterostructure device modeling.