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( Jyothi Rajesh Kumar ),( Chul Joo Kim ),( Ho Sung Yoon ),( Dong Jun Kang ),( Jin Young Lee ) 대한금속재료학회(구 대한금속학회) 2015 대한금속·재료학회지 Vol.53 No.8
In the present study, extraction and separation possibilities have been established for boron and lithium from Uyuni salar brine. Diols were shown to be effective extraction reagents for boron. The present scientific study was developed with 2, 2, 4-trimethyl-1, 3-pentanediol (TPD) as an extractant system. For fixing the diluent system, various diluents were tested and it was found that chloroform is a better diluent for boron extraction. Further, experimental studies on the extraction equilibrium time, pH influence, and phase ratio effects on boron extraction were conducted and the conditions for boron recovery and lithium separation were optimized. The McCabe Thiele diagram was established to optimize the number of extraction stages for boron extraction. Finally, stripping studies of boron from the loaded organic phase using various salts were performed. Received October 31, 2014)
Microstructural and electrical properties of Cu-germanide formed on p-type Ge wafer
Jyothi, I.,Janardhanam, V.,Hwang, J.Y.,Lee, W.K.,Park, Y.C.,Kang, H.C.,Lee, S.N.,Choi, C.J. Elsevier Sequoia 2016 JOURNAL OF ALLOYS AND COMPOUNDS Vol.655 No.-
We have investigated the microstructural and electrical properties of Cu-germanides formed by the deposition of Cu on Ge wafer, followed by rapid thermal annealing (RTA) process at the temperatures in the range of 300-700 <SUP>o</SUP>C. Regardless of RTA temperature, the Cu<SUB>3</SUB>Ge was the only phase formed as a result of solid-state reaction between Cu and Ge driven by RTA process. The RTA temperature dependency of specific contact resistivity of Cu<SUB>3</SUB>Ge was explained in terms of its structural evolution caused by RTA process. The RTA process at 400 <SUP>o</SUP>C led to the formation of Cu<SUB>3</SUB>Ge film having highly uniform surface and interface morphologies, allowing the minimum value of the specific contact resistivity. The samples annealed above 500 <SUP>o</SUP>C underwent the severe structural degradation of Cu<SUB>3</SUB>Ge, resulting in a rapid increase in the specific contact resistivity. After RTA at 700 <SUP>o</SUP>C, pyramidal Cu<SUB>3</SUB>Ge islands standing on a corner, distributed along Ge <110> direction were formed with epitaxial relationship on underlying Ge.
Unicystic ameloblastoma with diverse mural proliferation - a hybrid lesion
Jyothi Mahadesh,Dilip Kumar Rayapati,Prathima M Maligi,Prashanth Ramachandra 대한구강악안면방사선학회 2011 Imaging Science in Dentistry Vol.41 No.1
A 46-year-old man was referred to our hospital for treatment, complaining of swelling on the right mandibular molar region. Radiographic examination revealed a well defined multilocular radiolucent lesion with root resorption of right lower anteriors and molars. Following biopsy, a diagnosis of unicystic ameloblastoma of mural type was made and hemimandibulectomy was performed under general anesthesia. Histopathological examination of the surgical specimen exhibited a unicystic ameloblastoma of luminal, intraluminal, and mural type. Intraluminal proliferation was of plexiform pattern and mural proliferation showed unusual histopathological findings, which revealed follicular, acanthomatous areas coexisted with desmoplastic areas. This mural picture was similar to the so-called 'hybrid lesion of ameloblastoma', whose biological profile is not elicited due to the lack of adequate published reports. Two years follow up till date has not revealed any signs of recurrence.
( Jyothi Rajesh Kumar ),( In-hyeok Choi ),( Jin-young Lee ) 한국화학공학회 2017 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.55 No.4
The present experimental study proposed two ionic liquids (ILs) namely [Aliquat 336] [HSO<sub>4</sub>] (prepared and characterized at our laboratory) and Cyphos 101 IL (supplied by Cytec Company) dissolved in two different diluents such as DCM (di-chloro-methane) and toluene applied for PMs extraction. The first IL [Aliquat 336] [HSO<sub>4</sub>] prepared and confirmed the formation of final product by using FT-IR and TGA studies. The primary experiment in solvent extraction processing is kinetic effect; 0 to 30 time varied for PMs by using two ILs and confirmed the optimized extraction equilibrium time. This study was conducted for PMs (Pt, Rh and Cu) extraction and separation from each other by using proposed ILs. This is the primary study of the utilizing green solvents such as ILs as an extractant system for Pt, Rh and Cu extraction and possible separation.
Jyothi, I,Janardhanam, V,Kang, Min-Sung,Yun, Hyung-Joong,Lee, Jouhahn,Choi, Chel-Jong American Scientific Publishers 2014 Journal of nanoscience and nanotechnology Vol.14 No.11
<P>The current-voltage characteristics and the carrier-transport mechanism of the Er-silicide (ErSi1.7) Schottky contacts to strained-silicon-on-insulator (sSOI) and silicon-on-insulator (SOI) were investigated. Barrier heights of 0.74 eV and 0.82 eV were obtained for the sSOI and SOI structures, respectively. The barrier height of the sSOI structure was observed to be lower than that of the SoI structure despite the formation of a Schottky contact using the same metal silicide. The sSOI structure exhibited better rectification and higher current level than the SOI structure, which could be associated with a reduction in the band gap of Si caused by strain. The generation-recombination mechanism was found to be dominant in the forward bias for both structures. Carrier generation along with the Poole-Frenkel mechanism dominated the reverse-biased current in the SOI structure. The saturation tendency of the reverse leakage current in the sSOI structure could be attributed to strain-induced defects at the interface in non-lattice-matched structures.</P>
Effect of Pesticide Residue in Soil on Silkworm, Bombyx Mori L- Survey Analysis
Jyothi, N.B.,Prashant, N. Bavachikar,Maribashetty, V.G.,Radhakrishna, P.G. Korean Society of Sericultural Science 2019 International Journal of Industrial Entomology Vol.38 No.2
Silkworm larval mortality specifically during spinning stage leading to non-spinning with specific morphological symptoms was frequently complained by sericulturists in Karnataka, India during 2015. Survey was conducted and information collected through questionnaire from the identified farmers who faced the problem of non-spinning in both traditional and non-traditional areas of Karnataka. Survey results indicate that the problem is specific to the silkworm crop of those farmers' who shifted from other crops of agriculture/ horticulture/olericulture/ floriculture to Sericulture. Silkworm rearing performance of the batches fed with these leaves confirmed that the pesticide sprayed to the crops previous to mulberry, remain in the soil and when mulberry plantation is taken up in these gardens, the pesticide is absorbed by the roots of mulberry plants and transported to the leaves. Silkworms that feed on these mulberry leaves, grow and ripen normally but during spinning stage, larvae die with external symptoms like regurgitation, body shrinkage, rectal protrusion later become hook shaped leading to non-spinning or partial metamorphosis into pupa and death or spin flimsy cocoons. Larval mortality ranged from a minimum of twenty five percent to a maximum of hundred percent. The problem was noticed from the first harvest of leaves and lasted for a maximum period of 36 months. Cocoon crop loss depends on the concentration, duration and type of pesticides used previously for other crops.
Jyothi, I.,Janardhanam, V.,Kim, J.H.,Yun, H.J.,Jeong, J.C.,Hong, H.,Lee, S.N.,Choi, C.J. Elsevier Sequoia 2016 JOURNAL OF ALLOYS AND COMPOUNDS Vol.688 No.2
The structural changes of Au/Yb contacts to p-type GaN were investigated using X-ray diffraction, X-ray photoemission spectroscopy, and atomic force microscopy as the annealing temperature was varied. The results were used to interpret the electrical properties of Au/Yb Schottky contacts to p-type GaN. A barrier height of 0.84 eV was obtained for the as-deposited Au/Yb/p-type GaN Schottky diode. An optimum barrier height of 1.03 eV was obtained for the 400 <SUP>o</SUP>C annealed Au/Yb/p-type GaN Schottky diode and the barrier height decreased after annealing at temperatures above 500 <SUP>o</SUP>C. Intermixing between the Au and Yb films occurred, implying an interfacial reaction between Au and Yb during deposition followed by a massive diffusion of Au towards GaN with increasing annealing temperature. The increase in the barrier height for the 400 <SUP>o</SUP>C annealed Au/Yb/p-type GaN contact could be associated with the formation of YbN phase, which creates nitrogen vacancies acting as donors in the vicinity of the metal/GaN interface region. The decrease in the barrier height after annealing at 500 and 600 <SUP>o</SUP>C could be due to the evolution of gallide phases, which generate Ga vacancies, leading to an increase in the net hole concentration near the metal/GaN interface.
Jyothi, I.,Lee, Hoon-Ki,Janardhanam, V.,Lee, Sung-Nam,Choi, Chel-Jong American Scientific Publishers 2017 Journal of nanoscience and nanotechnology Vol.17 No.10
<P>The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of a Ti/p-type strained Si-on-insulator (sSOI) Schottky diode were measured as a function of temperature in the range, 175-375 K. The Schottky barrier parameters of the Ti/p-type sSOI diode, which were interpreted using thermionic emission theory, indicated a strong temperature dependence of the barrier height and ideality factor. The barrier height and ideality factor decreased and increased, respectively, with decreasing temperature, which was attributed to the distribution of barrier heights due to the inhomogeneity at the metal-semiconductor interface. In addition, the discrepancy in the barrier heights obtained from the I-V and C-V techniques confirmed the inhomogeneities in the Schottky barrier. The inhomogeneities in the barrier characterized under the assumption of a Gaussian distribution revealed the existence of a double barrier distribution with a transition occurring at 275 K. The Richardson plot interpreted with the Gaussian distribution approach yielded a Richardson constant of 21.4 Acm(-2)K(-2) in the high temperature region close to the theoretical value of 31.6 Acm(-2)K(-2) for p-type sSOI. The low frequency noise measurements of the Ti/p-type sSOI Schottky diodes in the forward bias exhibited a 1/f(gamma) dependence with gamma ranging from 0.67 to 1.30, indicating the origin of noise due to the fluctuations in the carrier number caused by trapping-detrapping processes in the traps of the depletion region. Furthermore, the current-noise-power spectral density indicated the presence of defect states or traps existing in the depletion region or in the forbidden gap of the sample.</P>