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金鐵柱,金榮祚,金禧植 서울市立大學校 1991 論文集 Vol.25 No.-
For integrated circuit fabrication process compatible with education and R & D purpose, its period must be shortened and its yield must be satifactory, too. For this purpose, this study carried out minimized 4-film masks, hence the fabrication process period was shortened. 4-film mask I.C fabrication is processed during 40 hours, containing MOSFET of various W/L, resistors, diodes, ring-oscillator. The threshold voltage of p-n junction diode is about 0.7[V] and the resistivity of polysilicon for self-aligned gate electrode is less than 10-³[Ωcm]. This paper contains the diffusion profile, thin film growth condition using electrical furnace and CVD system, wet and dry etching condition of the growth thin film, I-V, and C-V characteristics of MOS Transistor fabricated in this process. In MOS Transistor, the leakage current of gate oxide and various charges in the interface between gate oxide and silicon substrate are proposed as the most important problem, but these problems are overcome by repeated experimentation. MOS Transistor using AEO as an example of research experimentation have characteristics prior to the case using general dry oxidation gate.
김희식,남택주 서울시립대학교정보기술연구소 1999 정보기술연구소 논문집 Vol.1 No.-
A magnetic ballast is developed and achieved high efficiency of luminousness by fluorescent lamps. The magnetic ballast adopted G-9 as core material. The shape of core is modified. The diameter of the coil is upgraded to 0.5 ㎜, and a new power-saving circuit is designed for the semiconductor ignition starter. The experimental results efficiency is increased 6.2 lm/Watt (7.6 % and the ballast efficiency factor(BEF) of 1.09(7.6 %). The prototype was tested through governmental testing procedure. A high efficient energy-using equipment (the second grade in the efficiency of energy consumption) was certified. The saving power of 17[W] is shown by lightning apparatus for fluorescent lamps