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Desiree López,Michelle Torres,Jammy Vélez,Jhensen Grullon,Edwin Negrón,Cynthia M. Pérez,Cristina Palacios 대한의료정보학회 2017 Healthcare Informatics Research Vol.23 No.1
Objectives: This study developed a smartphone nutritional application (app) for making smart and healthy choices when purchasing food in grocery stores and tested its feasibility, usability, satisfaction and acceptability. Methods: “MyNutriCart” was developed following the ADDIE (analysis, design, development, implementation, and evaluation) model. The goals of the app were to improve food selection when purchasing foods in the grocery stores based on a pre-defined budget, to improve dietary patterns based on the Dietary Guidelines for Americans, and to improve weight status. It was evaluated within a pilot randomized trial using a convenient sample of 26 overweight or obese adults aged 21–45 years for 8 weeks. Results: The developed app provided a grocery list of healthy foods to meet the individual requirements of all family members within a budget following the recommendations of the Dietary Guidelines for Americans. The average use of the app was 75% on each purchase and only 37% of the recommended products were purchased. The main reasons for not purchasing the recommended items were that participants did not like these (28.5%) and that the item was unavailable in the supermarket (24.3%). Over 50% of participants considered the app as feasible, usable, satisfactory, and acceptable (p < 0.05). Conclusions: “MyNutriCart” is the first available app for making smart and healthy choices when purchasing food in grocery stores. This app could be used as a tool to translate recommendations into a practical grocery list that meet the needs of a family within a budget.
Reliability Characteristics of La-doped High-k/Metal Gate nMOSFETs
Kang, C.Y.,Choi, R.,Lee, B.H.,Jammy, R. The Institute of Electronics and Information Engin 2009 Journal of semiconductor technology and science Vol.9 No.3
The reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. nMOSFETs with metal/La-doped high-k dielectric stack show lower $V_{th}$ and $I_{gate}$, which is attributed to the dipole formation at the high-k/$SiO_2$ interface. The reliability results well correlate with the dipole model. Due to lower trapping efficiency, the La-doping of the high-k gate stacks can provide better PBTI immunity, as well as lower charge trapping compared to the control HfSiO stacks. While the devices with La show better immunity to positive bias temperature instability (PBTI) under normal operating conditions, the threshold voltage shift (${\Delta}V_{th}$) at high field PBTI is significant. The results of a transconductance shift (${\Delta}G_m$) that traps are easily generated during high field stress because the La weakens atomic bonding in the interface layer.
Reliability Characteristics of La-doped High-k/Metal Gate nMOSFETs
C. Y. Kang,R. Choi,B. H. Lee,R. Jammy 대한전자공학회 2009 Journal of semiconductor technology and science Vol.9 No.3
The reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. nMOSFETs with metal/La-doped high-k dielectric stack show lower Vth and Igate, which is attributed to the dipole formation at the high-k/SiO₂ interface. The reliability results well correlate with the dipole model. Due to lower trapping efficiency, the La-doping of the high-k gate stacks can provide better PBTI immunity, as well as lower charge trapping compared to the control HfSiO stacks. While the devices with La show better immunity to positive bias temperature instability (PBTI) under normal operating conditions, the threshold voltage shift (ΔVth) at high field PBTI is significant. The results of a transconductance shift (ΔGm) that traps are easily generated during high field stress because the La weakens atomic bonding in the interface layer.
OH, Jungwoo,HUANG, Jeff,OK, Injo,LEE, Se-Hoon,D. KIRSCH, Paul,JAMMY, Raj,LEE, Hi-Deok The Institute of Electronics, Information and Comm 2011 IEICE transactions on electronics Vol.94e.c No.5
<P>We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. Surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS further enhance transistor performances. On a (110) surface, the hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. We finally address low drive current issue of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (D<SUB>it</SUB>) and specific contact resistivity (<I>ρ<SUB>c</SUB></I>).</P>
강민호,Ying-Ying Zhang,박기영,Shi-Guang Li,Soon-Yen Jung,이가원,왕진석,오정우,Prashant Majhi,Raj Jammy SEMATECH,Hi-Deok Lee 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.1
Hydrogen (H) ion shower doping was proposed to improve the thermal stability of nickel germanide (NiGe), and its effects were analyzed in depth. As the post-germanidation annealing temperature was increased, the sheet resistance (Rsh) of the undoped sample increased sharply due to NiGe agglomeration while that of the H-doped samples showed a little increase at a temperature above 550℃ due to the suppression of NiGe agglomeration and Ni penetration. Hydrogen atoms in NiGe were found to significantly suppress local penetration of Ni atoms out of NiGe and hence contribute to the improvement the thermal stability of NiGe.
Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric
Hyun-Sik Choi,Seung-Ho Hong,Rock-Hyun Baek,Kyong-Taek Lee,Chang-Yong Kang,Jammy, R.,Byoung-Hun Lee,Sung-Woo Jung,Yoon-Ha Jeong IEEE 2009 IEEE electron device letters Vol.30 No.5
<P>Low-frequency noise (LFN) after channel soft oxide breakdown (SBD) of n-MOSFETs with a HfLaSiO gate dielectric and TaN metal gate shows a Lorentzian-like spectrum, which is not observed in HfSiO gate dielectric devices after channel SBD. This is related to the spatial location of the SBD spot. Because La weakens atomic bonding in the interface layer, the SBD spot is generated close to the Si/SiO<SUB>2</SUB> interface. This is verified by using time domain analysis. To examine the property of this Lorentzian-like noise, LFNs after channel SBD are measured repeatedly after arbitrary times. After about 20 h, LFN finally shows an increase only at the low-frequency part of the noise spectrum (f < 1 kHz). These results suggest that the trap distribution after arbitrary times spreads instead of remaining localized. Therefore, the traps or the La-O defect clusters have severe unstable distribution and induce an increase of the localized field, which, in turn, causes the traps to percolate through the high-k dielectric.</P>
Review of alternative gate stack technology research during the last decade
Byoung Hun Lee1,Paul Kirsch,Husam Alshareef,Prashant Majhi,Rino Choi,Seungchul Song,Hsing Huang Tseng,Raj Jammy 한국세라믹학회 2006 세라미스트 Vol.9 No.4
Scaling of the gate stack has been one of the major contributors to the performance enhancement of CMOSFET devices in past technology generations The scalability of gate stack has diminished in recent years and alternative gate stack technology such as metal electrode and high-k dielectrics has been intensively studied during almost matches that of conventional SiO2-based gate dielectrics. However, many technical challenges remain to be resolved before alternative gate stacks can be introduced into mainstream technology. This paper reviews the reasearch in alternative gate stack technologies to provide insights for future reasearch.
Won-Ho Choi,Chang-Young Kang,Jung-Woo Oh,Byoung-Hun Lee,Majhi, Prashant,Hyuk-Min Kwon,Jammy, Raj,Ga-Won Lee,Hi-Deok Lee IEEE 2010 IEEE electron device letters Vol.31 No.11
<P>Analyzed herein is the effect of different germanium (Ge) concentrations on negative bias temperature instability (NBTI) and channel hot carrier (CHC) degradations in high-performance Si1-xGex pMOSFETs. It is shown that higher concentrations result in less NBTI degradation due to the increased barrier height between the SiGe and high-k dielectric interface, but it causes greater CHC degradation due to the decreased channel bandgap with higher Ge concentrations. Therefore, the tradeoff between NBTI and HC degradations for different Ge concentrations should be considered when developing high-performance Si1- xGex pMOSFETs.</P>
Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs
Zhang, Ying-Ying,Oh, Jungwoo,Li, Shi-Guang,Jung, Soon-Yen,Park, Kee-Young,Shin, Hong-Sik,Lee, Ga-Won,Wang, Jin-Suk,Majhi, Prashant,Tseng, Hsing-Huang,Jammy, Raj,Bae, Tae-Sung,Lee, Hi-Deok The Electrochemical Society 2009 Electrochemical and solid-state letters Vol.12 No.1