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Saxena, R.S.,Bhan, R.K.,Jalwania, C.R.,Lomash, S.K. The Institute of Electronics and Information Engin 2006 Journal of semiconductor technology and science Vol.6 No.4
This paper presents the results of a novel test structure for process control monitor for uncooled IR detector technology of microbolometer arrays. The proposed test structure is based on resistive network configuration. The theoretical model for resistance of this network has been developed using 'Compensation' and 'Superposition' network theorems. The theoretical results of proposed resistive network have been verified by wired hardware testing as well as using an actual 16x16 networked bolometer array. The proposed structure uses simple two-level metal process and is easy to integrate with standard CMOS process line. The proposed structure can imitate the performance of actual fabricated version of area array closely and it uses only 32 pins instead of 512 using conventional method for a $16{\times}16$ array. Further, it has been demonstrated that the defective or faulty elements can be identified vividly using extraction matrix, whose values are quite similar(within the error of 0.1%), which verifies the algorithm in small variation case(${\sim}1%$ variation). For example, an element, intentionally damaged electrically, has been shown to have the difference magnitude much higher than rest of the elements(1.45 a.u. as compared to ${\sim}$ 0.25 a.u. of others), confirming that it is defective. Further, for the devices having non-uniformity ${\leq}$ 10%, both the actual non-uniformity and faults are predicted well. Finally, using our analysis, we have been able to grade(pass or fail) 60 actual devices based on quantitative estimation of non-uniformity ranging from < 5% to > 20%. Additionally, we have been able to identify the number of bad elements ranging from 0 to > 15 in above devices.
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R. S. Saxena,R. K. Bhan,C. R. Jalwania,S. K. Lomash 대한전자공학회 2006 Journal of semiconductor technology and science Vol.6 No.4
This paper presents the results of a novel test structure for process control monitor for uncooled IR detector technology of microbolometer arrays. The proposed test structure is based on resistive network configuration. The theoretical model for resistance of this network has been developed using ‘Compensation’ and ‘Superposition’ network theorems. The theoretical results of proposed resistive network have been verified by wired hardware testing as well as using an actual 16x16 networked bolometer array. The proposed structure uses simple two-level metal process and is easy to integrate with standard CMOS process line. The proposed structure can imitate the performance of actual fabricated version of area array closely and it uses only 32 pins instead of 512 using conventional method for a 16x16 array. Further, it has been demonstrated that the defective or faulty elements can be identified vividly using extraction matrix, whose values are quite similar(within the error of 0.1%), which verifies the algorithm in small variation case(~1% variation). For example, an element, intentionally damaged electrically, has been shown to have the difference magnitude much higher than rest of the elements(1.45 a.u. as compared to ~ 0.25 a.u. of others), confirming that it is defective. Further, for the devices having non-uniformity ≤ 10%, both the actual non-uniformity and faults are predicted well. Finally, using our analysis, we have been able to grade(pass or fail) 60 actual devices based on quantitative estimation of non-uniformity ranging from < 5% to > 20%. Additionally, we have been able to identify the number of bad elements ranging from 0 to > 15 in above devices.
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