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Jakapan Chantana,Takuya Kato,Hiroki Sugimoto,Takashi Minemoto 한국물리학회 2017 Current Applied Physics Vol.17 No.4
Influences of the surface treatments of Cu(In,Ga)(Se,S)2 (CIGSSe) thin films, which are KCN, HCl, or thiuorea treatments, were investigated by time-resolved photoluminescence (TRPL) and temperature dependent current density-voltage (J-V) characteristics of their solar cells. It is demonstrated that the KCN treatment optimized under 1 wt% leads to the significant increase in conversion efficiency (h) up to 19.21%. On the other hand, the h of the CIGSSe solar cells is in ranges of 13.70e15.51% and 9.86e10.70% with the HCl treatments (0.3e0.7 mol/L), and thiuorea treatments (0.5e1.5 mol/L), respectively, which are lower than 16.66% that of the reference solar cell without the surface treatment. According to TRPL measurements, the quality of near-surface CIGSSe is improved with the KCN treatment (1 wt%) owing to enhanced TRPL lifetimes, whereas that is deteriorated with the HCl and thiuorea treatments due to decreased TRPL lifetimes. In addition, according to the temperature-dependent J-V measurement, the interface recombination of the CIGSSe solar cell is decreased with the KCN treatment, while that of the CIGSSe solar cells is increased with the HCl and thiuorea treatments. Ultimately, 19.21%-efficient CIGSSe solar cell with the KCN treatment (1 wt%) at room temperature with the increased VOC of 0.692 V was obtained, which is around 15.3% relatively higher h than that of the solar cell without the surface treatment.
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Noriyuki Yuzawa,Jakapan Chantana,Shigeru Nakatsuka,Yoshitaro Nose,Takashi Minemoto 한국물리학회 2017 Current Applied Physics Vol.17 No.4
ZnSnP2 film is a promising absorber for thin-film solar cell due to earth-abandant and nontoxic element. Phosphidation method is utilized for the fabrication of ZnSnP2 films with different Zn/Sn atomic ratios. ZnSnP2 film with the large ZnSnP2 protrusions are demonstrated with Zn/Sn of ~1 (near stoichiometry), while the film with the relatively smooth surface is presented with Zn/Sn of above 1 (Zn rich). According to grazing incidence X-ray diffraction measurement, Sn4P3 secondary phase is appeared in ZnSnP2 film with Zn/Sn of below 1 (Sn rich), whereas Zn3P2 secondary phase is presented in the film with Zn rich. On the other hand, Sn4P3 and Zn3P2 secondary phases are not observed in ZnSnP2 thin film with near stoichiometry, thus leading to the longest carrier lifetime, implied by time-resolved photoluminescence measurement. Ultimately, the conversion efficiency of 0.021% with short-circuit current density of 5.03 mA/cm2 is reported for ZnSnP2 thin-film solar cell, where its absorbing layer possesses single ZnSnP2 phase and Zn/Sn ratio near stoichiometry. The energy bandgap of ZnSnP2 thin films by phosphidation method is estimated to be 1.38 eV by external quantum efficiency, implying that the ZnSnP2 has sphalerite structure.
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Yu Kawano,Jakapan Chantana,Takashi Minemoto 한국물리학회 2015 Current Applied Physics Vol.15 No.8
Tin(II) sulfide (SnS) films are one of the most promising absorber materials for high efficiency solar cells without using rare metals. In this work, SnS films were deposited by the thermal evaporation on glass substrates under the variation of growth temperatures of 100-250 ℃. It was revealed that the SnS thin film prepared under the temperature of 100 ℃ had relatively small crystal grains. On the other hand, the denser and larger crystal grains of the SnS films were obtained with the constant compositions, when the growth temperature increased to 225 ℃. With the temperature of higher than 225 ℃, the SnS began to be re-evaporated from the films. The highest Hall mobility of the films was obtained under the temperature of 200 ℃. Ultimately, the results suggested that the optimized growth temperature of SnS by the evaporation is 200 ℃, giving rise to compact and large crystal grains and the highest Hall mobility, thereby contributing to the 2.53%-efficient SnS thin-film solar cell.
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Application of multi-buffer layer of (Zn,Mg)O/CdS in Cu2ZnSn(S,Se)4 solar cells
Daisuke Hironiwa,Jakapan Chantana,Noriyuki Sakai,Takuya Kato,Hiroki Sugimoto,Takashi Minemoto 한국물리학회 2015 Current Applied Physics Vol.15 No.3
(Zn,Mg)O (ZMO) buffer layer has attracted attention for having the potential to control the conduction band offset of buffer layer and large band-gap (Eg) Cu2ZnSn(S,Se)4 (CZTSSe) absorber interface, where the ZMO layer is deposited by the sputtering. However, the solar cell efficiency is decreased with the ZMO layer as compared with the CdS layer. The decrease in conversion efficiency is attributed to the sputtering damage on the absorber and high light reflection from the surfaces of CZTSSe solar cells. To completely suppress the damage, a CdS layer with very thin thickness of 20 nm is inserted between the ZMO layer and the CZTSSe layer. In addition, MgF2 layers are deposited on CZTSSe solar cells as anti-reflection coating. Ultimately, the solar cell with multi-buffer layer of ZMO/thin-CdS is almost same level as that with the CdS layer. Therefore, the multi-buffer layer can be an appropriate buffer layer of the large-Eg CZTSSe layer.
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Takeguchi Kota,Chantana Jakapan,Nakayama Koichi,Kawano Yu,Nishimura Takahito,Hishikawa Yoshihiro,Minemoto Takashi 한국물리학회 2021 Current Applied Physics Vol.28 No.-
Spectral mismatch correction factor (MM) is determined by average photon energy (APE). APE based on wide solar spectral ranges leads to better description of solar spectral shape. Moreover, error between corrected outdoor short-circuit current (ISC) of PV module and its ISC under standard test conditions is investigated using PV module irradiance sensor (PVMS) and/or MM, where PVMS is a single-crystalline silicon PV module. The error of muti-crystalline silicon (mc-Si) PV module is as low as about 1% regardless of the use of MM attributed to small spectral mismatch between PVMS and mc-Si PV module. On the other hand, the low error of CdTe test PV module is obtained under the use of both PVMS and MM caused by the high spectral mismatch between PVMS and CdTe test PV module. The error is further decreased, when MM is estimated from the APE based on wide ranges of the solar spectrum.
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