http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Iqbal, M.Z.,Kelekci, O.,Iqbal, M.W.,Eom, J. Pergamon Press ; Elsevier Science Ltd 2013 Carbon Vol.59 No.-
The defect formation mechanism in chemical vapor deposition grown single layer graphene devices has been investigated by increasing electron beam (e-beam) irradiation doses gradually up to 750e<SUP>-</SUP>/nm<SUP>2</SUP>. The evolution of D peaks in Raman spectra provides an evidence of strong lattice disorder due to e-beam irradiation. Particularly, the trajectory of D and G peak intensities ratio (I<SUB>D</SUB>/I<SUB>G</SUB>) suggests that the transformation of graphene from crystalline to the nanocrystalline and then towards amorphous form with increasing irradiation dose. The defect parameters were calculated by phenomenological model of amorphization trajectory for graphitic materials. The mobility decreasing gradually from ~1200 to ~80cm<SUP>2</SUP>/V s with gradual increase of irradiation dose, which implies the formation of localized states in e-beam irradiated graphene. The Dirac point is shifted towards negative gate voltage which indicates the n-doping in graphene with increasing e-beam irradiation dose.
Modification of the structural and electrical properties of graphene layers by Pt adsorbates
Iqbal, M Waqas,Iqbal, M Zahir,Khan, M Farooq,Jin, Xiaozhan,Hwang, Chanyong,Eom, Jonghwa TaylorFrancis 2014 SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS Vol.15 No.5
<P>The properties of graphene are strongly affected by metal adsorbates and clusters on graphene. Here, we study the effect of a thin layer of platinum (Pt) metal on exfoliated single, bi- and trilayer graphene and on chemical vapor deposition-grown single-layer graphene by using Raman spectroscopy and transport measurements. The Raman spectra and transport measurements show that Pt affects the structure as well as the electronic properties of graphene. The shift of peak frequencies, intensities and widths of the Raman bands were analyzed after the deposition of Pt with different thicknesses (1, 3, 5 nm) on the graphene. The shifts in the G and 2D peak positions of the Raman spectra indicate the n-type doping effect by the Pt metal. The doping effect was also confirmed by gate-voltage dependent resistivity measurements. The doping effect by the Pt metal is stable under ambient conditions, and the doping intensity increases with the increasing Pt deposition without inducing a severe degradation of the charge carrier mobility.</P>
Pollution detection for the singular linear parabolic equation
Iqbal M. Batiha,Imad Rezzoug,Taki-Eddine Oussaeif,Adel Ouannas,Iqbal H. Jebril 한국전산응용수학회 2023 Journal of applied mathematics & informatics Vol.41 No.3
In this work, we are concerned by the problem of identification of noisy terms which arise in singular problem as for remote sensing problems, and which are modeled by a linear singular parabolic equation. For the reason of missing some data that could be arisen when using the traditional sentinel method, the later will be changed by a new sentinel method for attaining the same purpose. Such new method is a particular least square-like method which permits one to distinguish between the missing terms and the pollution terms. In particular, a sentinel method will be given here in its more realistic setting for singular parabolic problems, where in this case, the observation and the control have their support in different open sets. The problem of finding a new sentinel is equivalent to finding singular optimality system of the least square control for the parabolic equation that we solve.
Edge Oxidation Effect of Chemical-Vapor-Deposition-Grown Graphene Nanoconstriction
Iqbal, Muhammad Waqas,Iqbal, Muhammad Zahir,Jin, Xiaozhan,Hwang, Chanyong,Eom, Jonghwa American Chemical Society 2014 ACS APPLIED MATERIALS & INTERFACES Vol.6 No.6
<P>The edge oxidation effects of chemical-vapor-deposition-grown graphene devices with nanoconstrictions of different sizes are presented. The effects of edge oxidation on the doping level of a nanoconstriction graphene device were identified by Raman spectroscopy and using the back-gate-voltage-dependent resistance. Strong p-type doping was observed as the size of nanoconstriction decreased. The Dirac point of the graphene device shifted toward positive voltage, and the positions of the G and 2D peaks in Raman spectroscopy shifted toward a higher wave number, indicating the p-type doping effect of the graphene device. p-type doping was lifted by deep-ultraviolet light illumination under a nitrogen atmosphere at room temperature. p-type doping was restored by deep-ultraviolet light illumination under an oxygen atmosphere at room temperature. Edge oxidation in the narrow structures explains the origin of the p-type doping effect widely observed in graphene nanodevices.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2014/aamick.2014.6.issue-6/am405885c/production/images/medium/am-2013-05885c_0008.gif'></P>