血淸內 3,3',5'-Triiodothyronine (Reverse T₃)과 3,3',5 Triiodothyronine(T₃)의 動態에 關하여

金支烈,李民化 全南大醫大 1980 전남의대학술지 Vol.17 No.1

MBE법으로 성장시킨 InxGa₁_xAs (x=0.02) 에피층에서의 Photo reflectance에 관한 연구

김인수(In-Soo Kim),이정열(Jung-Yeul Lee),배인호(In-Ho Bae),김상기(Sang-Ki Kim),안행근(Haeng-Keun Ahn),박성배(Sung-Bae Park) 한국진공학회(ASCT) 1996 Applied Science and Convergence Technology Vol.5 No.2

반절연성 GaAs(100) 위에 Molecular Beam Epitaxy(MBE)법으로 In의 조성을 0.02으로 일정하게 하여 성장시킨 In_xGa_(1-x)As/GaAs의 photoreflectance(PR) 스펙트럼 특성을 측정하였다. 기판과 에피층의 PR 신호가 분리되어 관측되었으며, 띠간격 에너지 (E。)는 약 1.40eV로써 Pan의 식에 fitting한 결과 약 8meV의 차이가 생겼다. 이는 에피층과 기판의 격자부정합(lattice mismatch)으로 인해 파생되는 계면에서의 응력 (stress)이 그 요인으로 이것이 시료 성장시 결정성에 영향을 미치고 있음을 확인할 수 있었다. 또한, ln_(0.02)Ga_(0.98)As 에피층은 온도 의존도가 낮고 광흡수 효율이 크며 200K 이상의 온도에서 활성화되는 것으로 분석되었고, 성장 온도보다 낮은 온도 400℃로 열처리시킨 경우에 PR 신호 분리가 가장 뚜렷하였으며, 이때 결정성 또한 향상됨을 알았다. We measured photoreflectance spectrum characteristics of InGaAs grown by MBE method on semi-insulating GaAs. The PR signal splitting of substrate and epilayer was observed. The band gap energy was about 1.40 eV. It make to 8 meV difference when it is fitted by Pan's equation. The reason is stress on the interface, which is due to lattice mismatch between epilayer and substrate. We became to know that reason influence crystalline on growing sample. In InGaAs epilayer, temperature dependency is low. The efficiency of photo absorption is high and activate over 200K. In this case when it is annealed at 400℃ below growing temperature, PR signal splitting is remarkable and crystalline is inhanced.

日本의 社會科學 및 體育分野 學問硏究動向에 對한 調査 硏究

金榮秀,崔晄烈,金相漢,金麟坤,金炳斗,金永煥 慶北大學校 經商大學 經濟學科 1981 慶商大學論集 Vol.9 No.-

This paper attempts to review and trace back to, based on the data collected during visits of Japanese universities and research institutes, the organizational characteristics, the structures of curricula and study trends, with regard to the fields of social sciences, especially economics and business administration. One of the most conspicuous characteristics observed in academic organizations was Tsukuba university's system whose academic institution was organized around academic grouping, academic genealogy, and specialty: particularly social economic planning belonged to the genealogy of social engineering, in light of its characteristics in term of curriculum, seems to meet the contemporary need. There found two speciality areas in the Department of Social Engineering at the Graduate School: one is the concentration on Mathematical Planning and the other Management Engineering. Considering that its academic goal is tosys tematically and empirically analyze the human behaviors, and to take interdi-sci plinary approach through a policy-oriented system in doing so, it reflects one of the true natures of the academic trend. Their curricula appear to emphasize on analytical methods under uncertainty, application of mathematical planning techniques, system simulation, and information system design and its application, in the area of economics and business administration. Physical education is believed to require modernized facilities and equipments for its record-breaking and technical enhancement, and so increased investment in physical facilities and policy considerations for the training of physical educators are necessary.

Monoamine Oxidase 의 활성 변화에 의한 기미론 연구

黃今熙,마진열,金仁洛 대한본초학회 1999 大韓本草學會誌 Vol.14 No.1

To explain the theory of KIMI which is the theory of therapeutics in oriental medicine, the monoamine oxidase(MAO) activities were determined in the brain and liver of mouse which was orally adminstered cold and hot drugs, and forced swimming in cold and hot water. The MAO plays a central role in the metabolism of many amines including the neurotransmetter monoamines. MAO is a flavoprotein found exclusively in the mitochondrial outer membrane, occuring in the MAO-A and MAO-B subtypes. MAO-A deaminates serotonin and noradrenaline, whereas MAO-B prefers penylethylamine and benzylamine as substrates. Serotonin is important neurotransmetter for the control of body temperature. Coptis japonica Makino was selected as the cold drug, and Radix Aconiti lateralis preparata was as the hot drug. Coptis japonica Makino elevated the MAO-A activity which was increased by cold stress, whereas it inhibited the MAO-B activity which was increased by cold stress. Coptis japonica Makino elevated the MAO-A activity which was decreased by heat stress, whereas it inhibited the MAO-B activity which was increased by heat stress. Radix Aconiti lateralis preparata inhibited the MAO-A activity which was increased by cold stress, whereas it inhibited the MAO-B activity which was increased by heat stress.

정신병적 우울증의 신경심리학적 양상 : 비정신병적 우울증 및 정신분열병과의 비교 Comparison with Nonpsychotic Depression and Schizophrenia

김진세,유승호,정인과,제용진,김해열 대한생물치료정신의학회 1997 생물치료정신의학 Vol.3 No.1

본 연구는 24명의 비정신병적 우울증 환자, 25명의 정신병적 우울증 환자, 그리고 49명의 정신분열병 환자 총 98명을 대상으로 신경심리학적 양상을 비교하여, 정신병적 우울증이 비정신병적 우울증과는 다른 신경심리학적 이상이 있는지에 대하여 알아보았다. 신경심리학적 검사로써 숫자상징검사, 선로잇기검사 A형과 B형, 수지력검사, 시각지속수행검사, 공간기억검사 및 위스콘신 카드 분류검사 등을 시행하였다. 그 결과는 다음과 같다. 1) 숫자상징검사, 선로잇기검사 A형에서 비정신병적 우울증 환자군이 정신분열병 환자군보다 통계적으로 유의하게 높은 수행능력을 보였다. 2) 시각지속수행검사에서 비정신병적 우울증 환자군이 정신분열병 환자군보다 통계적으로 유의하게 높은 수행능력을 보였으며, 정신병적 우울증 환자군은 정신분열병 환자군과 유사하게 낮은 수행능력을 보였다. 3) 공간기억검사에서 정확한 반응의 비율은 정신분열병 환자군이 다른 두 군보다 통계적으로 유의하게 낮은 수행결과를 보였고, 정신병적 우울증 환자군은 비정신병적 우울증 환자군과 서로 비슷했다. 4) 위스콘신카드 분류검사에서 비정신병적 우울증 환자군은 정신병적 우울증 환자군과 정신분열병 환자군에 비해서 통계적으로 유의하게 높은 수행능력을 보였고, 정신병적 우울증 환자군과 정신분열병 환자군 사이에는 통계적으로 유의한 차이를 보이지 않았다. 결론적으로 정신병적 우울증의 신경심리학적 양상은 비정신병적 우울증과 다르며, 특히 전두엽의 기능부전을 의심할 수 있는 소견을 보였다. Objectives : A lot of studies have suggested evidences that psychotic depression is different from nonpsychotic depression in many aspects. Hence, the authors compared clinical variables and neuropsychological features of psychotic depression to those of non psychotic depression and schizophrenia in order to find out whether psychotic depression is classified by the different diagnostic category to nonpsychoticdepression. Methods : We examined the neuropsychological features of 24 nonpsychotic depression patients, 25 psychotic depression patients, and 49 schizophrenia patients. The neuropsychological tests that we made comprise digit symbol test, trail-making test A, trail-making test B, finger tapping test, continuous visual performance test, spatial memory test, and Wisconsin card sorting test. Results : 1) Mean score of digit symbol test and trail making test A in nonpsychotic depression group is statistically higher than in schizophrenia group. 2) Nonpsychotic depression group showed statistically higher accuracy than schizophrenia group and psychotic depression group showed similar result with schizophrenia group in continuous visual performance test. 3) Schizophrenia group showed statistically lower rates of accurate responses than the other two groups in spatial memory test. 4) Nonpsychotic depression group showed better performances than the other two groups and psychotic depression group showed no significant difference with schizophrenia in correct total score, error total score, and completed categories score for Wisconsin card sorting test. Conclusions : Above results show that frontal dysfunction might be appeared in psychotic depression. Therefore, we suggest that psychotic depression might be distinguished from nonpsychotic depression.

철을 오염시킨 n-GaAs의Photoreflectance에 관한 연구

유재인,문영희,이동울,이정열,배인호,장광수 嶺南大學校 基礎科學硏究所 1998 基礎科學硏究 Vol.18 No.-

We investigated the variation of PR signals for n-GaAs surface treated with Fe as annealing method. The samples were annealed by isochronal(200∼600 ℃, 10 min) and isothermal(300 ℃, 10 ∼60 min) method. In PR signals measured from isochronal annealed samples, the rate of intensity decreasing for n-GaAs was 49%, and that for n-GaAs surface treated with Fe was 66%. We assumed that the large amount of decreasing intensity for Fe contaminated sample caused by decreasing carrier density due to increasing of ?? neutral acceptor at higher annealing temperature. In PR signals measured from isothermal annealed samples, the signals for annealed n-GaAs decreased with increasing annealing time, and the signals for n-GaAs surface treated with Fe continuously increased with increasing annealing time. It can be assumed that the increasing of PR intensity for Fe contaminated samples as annealing time caused by the diffusion of Fe atoms from the surface.

GaAs 및 InP에서의 photoreflectance 특성 연구

이정열,배인호,김인수,장광수 嶺南大學校 基礎科學硏究所 1996 基礎科學硏究 Vol.16 No.-

We investigated photoreflectance(PR) characterization of the Ⅲ-V group compound semiconductors with respect to modulation sources, those are, measured temperature and furnace annealing effect(FAE) of each sample. The band gap(??), broadening parameter(?), and dimensional number(n) of the critical point model by means of the band-to band transition were fitted by least-sqare root method for Aspnes' theoretical equation, and determined from the observed Franz-Keldysh oscillation(FKO). In particular, the Varshni equation and Bose-Einstein expression have been compared with the experimental results. After the thermal annealing, the crystallinity and the type conversion of each sample are observed and discussed.

Ⅲ-Ⅴ족 화합물 반도체에서의 Varshni 및 Bose-Einstein 계수 결정

이정열,김인수,배인호 嶺南大學校 基礎科學硏究所 1995 基礎科學硏究 Vol.15 No.-

The band gaps of the undoped semi-insulating and Si heavily doped n-GaAs(100) bulks were measured through photoreflectance spectra in the temperature range of 77 to 300K. Those values were fitted by least-square root method for Aspnes' theoretical equation, and determined from the observed Franz-Keldysh oscillation. Singularity, the Varshni equation and Bose-Einstein expression have been compared with the experimental results.

이온주입된 Si에서 급속 열처리에 따른 결정성 거동에 관한 연구

문영희,배인호,이정열,장광수 嶺南大學校 基礎科學硏究所 1998 基礎科學硏究 Vol.18 No.-

We investigated the crystalline behaviour in active ion implanted by Secondary ion mass spectroscopy (SIMS) and Raman spectroscopy. The implantation-induced amorphization of damaged layer was clearly observed via the evolution,with increasing fluence of the broad four-band continuum of amorphous Si which extends from zero up to ??. For the samples annealed wsing rapid thermal annealing(RTA) after an isochronical anneal(30 min.) and isothermal anneal(450 ℃) of samples implanted with As to a dose of ??, the simple line spectrum of cystalline Si was recoved. The sharp c-Si Raman peak at ?? decreased and broad a-Si to peak centered ?? predominated as the implantaton does was increased. To describe the amorphous-crystalline transition stucture was used RNM and SCM models. We found that peak center and width dramatically change between ?? and 300℃ suggesting their is a large stuctural change in this temperature range.

Se/CS₂용액으로 처리한 n-GaAs 표면의 Photoreflectance 특성에 관한 연구

장광수,김인수,배인호,한병국,이정열 嶺南大學校 基礎科學硏究所 1997 基礎科學硏究 Vol.17 No.-

The surface of of n-GaAs(100) was treated using 1.5㎎/100ml solution of Se/CS₂. The passivation of the surface of this sample was investigated by photoreflectance(PR) experiment. After the surface treatment, the samples were annealed between 300 to 700 ℃ in a N₂atmosphere for 10 min. From the obtained Franz-Keldysh oscillations, we have evaluated the surface electric field(E?) and built-in voltage(V??). The density of surface states(Q??) and surface Fermi level(E??) of n-GaAs treated with CS₂and Se/CS₂solution were determined 1.78 ×10??㎝?? , 1.81×10?㎝? and 0.734 eV, 0.737 eV, respectively. After annealed at 600 ℃, These values were about 45% and 13% smaller than those in unannealed samples. It has found that the passivation of surface occured when the surface of the sample had been treated with Se/CS₂ solution and annealed from 400 to 600 ℃. This is ascribed to effects due to activation of elemental Se on the surface.