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Kim, Jinbum,Shin, Ilgyou,Park, Taejin,Kim, Jinyong,Choi, Seongheum,Lee, Sungho,Hong, Seongpyo,Lee, Hyung-Ik,Won, Jung Yeon,Kim, Taegon,Kim, Yihwan,Hwang, Kihyun,Lee, Hoo-Jeong,Kim, Hyoungsub Elsevier 2019 JOURNAL OF ALLOYS AND COMPOUNDS Vol.788 No.-
<P><B>Abstract</B></P> <P>Pulsed-laser annealing (PLA) was performed on a preformed Pt-doped Ni-rich silicide film (Ni<SUB>2</SUB>Si phase), and its microstructural and phase evolution were studied from submelting to melting condition by varying the laser power density (<I>P</I>). Vertically nonuniform compositional profile with an interfacial intermixing was observed under a solid state reaction regime (<I>P</I> < 400 mJ/cm<SUP>2</SUP>) due to a limited atomic diffusion. At higher <I>P</I> condition, melting/resolidification occurred with a continuous increase in the Si concentration, and various microstructures of the film evolved with increasing <I>P</I>: amorphous structure and nucleation/growth of NiSi and NiSi<SUB>2</SUB> phases form in that order on the Si interface. Lastly, by applying additional rapid thermal annealing on the polycrystalline mixture of NiSi and NiSi<SUB>2</SUB> phases formed by PLA, a uniform Pt-doped NiSi<SUB>2</SUB> film with strong epitaxial growth tendency on the Si(001) substrate and high thermal stability (up to 900 °C) was synthesized.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Pt-doped Ni-silicides are formed using pulsed-laser annealing at various powers. </LI> <LI> Power-dependent solid- and liquid-state reactions yield various microstructures. </LI> <LI> Power-dependent microstructural and phase evolution paths are suggested. </LI> <LI> Additional rapid thermal annealing forms a thermally stable NiSi<SUB>2</SUB> film. </LI> </UL> </P>
Kim, Seung-Hwan,Kim, Gwang-Sik,Park, June,Lee, Changmin,Kim, Hyoungsub,Kim, Jiyoung,Shim, Joon Hyung,Yu, Hyun-Yong American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.31
<P>In the post-Moore era, it is well-known that contact resistance has been a critical issue in determining the performance of complementary metal-oxide-semiconductor (CMOS) reaching physical limits. Conventional Ohmic contact techniques, however, have hindered rather than helped the development of CMOS technology reaching its limits of scaling. Here, a novel conductive filament metal-interlayer-semiconductor (CF-MIS) contact-which achieves ultralow contact resistance by generating CFs and lowering Schottky barrier height (SBH)-is investigated for potential applications in various nanodevices in lieu of conventional Ohmic contacts. This universal and innovative technique, CF-MIS contact, forming the CFs to provide a quantity of electron paths as well as tuning SBH of semiconductor is first introduced. The proposed CF-MIS contact achieves ultralow specific contact resistivity, exhibiting up to ∼×700 000 reduction compared to that of the conventional metal-semiconductor contact. This study proves the viability of CF-MIS contacts for future Ohmic contact schemes and that they can easily be extended to mainstream electronic nanodevices that suffer from significant contact resistance problems.</P> [FIG OMISSION]</BR>
Kim, Hoijoon,Park, Taejin,Park, Seongjae,Leem, Mirine,Ahn, Wonsik,Lee, Hyangsook,Lee, Changmin,Lee, Eunha,Jeong, Seong-Jun,Park, Seongjun,Kim, Yunseok,Kim, Hyoungsub Elsevier 2019 THIN SOLID FILMS - Vol.673 No.-
<P><B>Abstract</B></P> <P>For the fabrication of high-performance top-gated MoS<SUB>2</SUB> transistors, a uniform atomic layer deposition (ALD) of an ultrathin high-<I>k</I> gate dielectric film without abnormal leakage paths on a MoS<SUB>2</SUB> channel is required. In this study, we fabricated a ~5.2 nm-thick monolithic HfO<SUB>2</SUB> gate dielectric film by utilizing an e-beam-evaporated Hf seed layer (target thickness of 3 nm) prior to the ALD of a HfO<SUB>2</SUB> film (~2 nm). The Hf seed layer was fully converted to HfO<SUB>2</SUB> without metallic residues during the following ALD process, without damages to the Raman and photoluminescence characteristics of the underlying MoS<SUB>2</SUB>. The conformal and pinhole-free ALD of the subsequent HfO<SUB>2</SUB> film was verified using conductive atomic force microscopy. In addition, operation of a top-gated MoS<SUB>2</SUB> transistor was demonstrated by integrating the Hf-seeded HfO<SUB>2</SUB> gate dielectric film.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Conformal and monolithic Hf-seeded ALD-HfO<SUB>2</SUB> film is formed on MoS<SUB>2</SUB>. </LI> <LI> Hf seed layer formation does not impose significant damages on MoS<SUB>2</SUB>. </LI> <LI> Hf-seeded HfO<SUB>2</SUB> gate dielectric film can be integrated in top-gated MoS<SUB>2</SUB> transistor. </LI> </UL> </P>
Effects of spontaneous nitrogen incorporation by a 4H-SiC(0001) surface caused by plasma nitridation
Kim, Dae-Kyoung,Kang, Yu-Seon,Jeong, Kwang-Sik,Kang, Hang-Kyu,Cho, Sang Wan,Chung, Kwun-Bum,Kim, Hyoungsub,Cho, Mann-Ho The Royal Society of Chemistry 2015 Journal of Materials Chemistry C Vol.3 No.19
<▼1><P>Change in defect states in the nitrided 4<I>H</I>-SiC(0001) channel formed by a plasma nitridation (PN) process was investigated as a function of rapid processing time (180 s) at room temperature.</P></▼1><▼2><P>Change in defect states in the nitrided 4<I>H</I>-SiC(0001) channel formed by a plasma nitridation (PN) process was investigated as a function of rapid processing time (180 s) at room temperature. The electronic structure of the interface between the nitride layer and the SiC substrate was investigated using X-ray photoelectron spectroscopy (XPS), medium-energy ion scattering (MEIS) and first-principles DFT calculations. The findings clearly showed that N adsorption occurred through the spontaneous incorporation at the SiC subsurface, resulting in the formation of an N-laminated structure at the interface. The results are consistent with an enhancement in the interface electrical characteristics because the energetically most stable gap state of SiC could only be observed in the N-laminate structure. In particular, the stress induced leakage current (SILC) characteristics showed that the generation of the defect state was significantly suppressed in a metal oxide semiconductor (MOS) structure with a nitride layer. These results provide an in-depth understanding of the process involved in the incorporation of N into the SiC subsurface and for the enhanced electrical characteristics of the interfacial nitride layer on SiC in the PN system.</P></▼2>
Doping and strain effects on the microstructure of erbium silicide on Si:P
Kim, Jinyong,Choi, Seongheum,Kim, Jinbum,Lee, Hyangsook,An, Byeongseon,Lee, Hyunjung,Lee, Choeun,Yang, Cheol-Woong,Kim, Hyoungsub Elsevier 2017 Journal of alloys and compounds Vol.727 No.-
<P><B>Abstract</B></P> <P>In pursuit of a potential low-resistive contact structure, ErSi<SUB>2-x</SUB> was grown on an excessively P-doped and highly strained epitaxial Si layer (Si:P with a P concentration of ∼2.8 at%), and its microstructure was investigated in comparison to that grown on a conventional Si(001) substrate. On the Si substrate, ErSi<SUB>2-x</SUB> grains nucleated with a local epitaxial relationship and grew to form a polycrystalline film with a preferred alignment of ErSi<SUB>2-x</SUB>(10 1 ¯ 0)//Si(001) in a largely strained state. However, the epitaxial relationship at the interface during the ErSi<SUB>2-x</SUB> nucleation stage was disrupted, and randomly oriented columnar ErSi<SUB>2-x</SUB> grains grew on the Si:P(001) layer. Several experiments to separate the possible strain and doping effects showed that inhibition of the epitaxial nucleation of ErSi<SUB>2-x</SUB> grains was induced by excessive P accumulation at the interface region rather than by the strain effect. P enrichment at the interface encouraged ErSi<SUB>2-x</SUB> film growth without a preferred orientation, and the intermittent P-deficient areas worsened the interface roughness by provoking the local intrusion of ErSi<SUB>2-x</SUB> grains toward the Si:P layer.</P> <P><B>Highlights</B></P> <P> <UL> <LI> ErSi<SUB>2-x</SUB> grows with a randomly oriented columnar structure on the Si:P(001) layer. </LI> <LI> The dominant factor affecting the microstructural change is the doping effect. </LI> <LI> A critical P concentration is needed to completely alter its microstructure. </LI> <LI> Inhomogeneous P accumulation induces encroachment of ErSi<SUB>2-x</SUB> grains at the interface. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Kim, Daekyoung,Fu, Yan,Kim, Jungwoo,Lee, Ki-heon,Kim, Hyoungsub,Yang, Heesun,Chae, Heeyeop IOP 2016 Nanotechnology Vol.27 No.24
<P>In this study, benzenethiol ligands were applied to the surface of CdSe@ZnS core@shell quantum dots (QDs) and their effect on the performance of quantum dot light-emitting diodes (QD-LEDs) was investigated. Conventional long-chained oleic acid (OA) and trioctylphosphine (TOP) capping ligands were partially replaced by short-chained benzenethiol ligands in order to increase the stability of QDs during purification and also improve the electroluminescence performance of QD-LEDs. The quantum yield of the QD solution was increased from 41% to 84% by the benzenethiol ligand exchange. The mobility of the QD films with benzenethiol ligands approximately doubled to 2.42 × 10<SUP>−5</SUP> cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> from 1.19 × 10<SUP>−5</SUP> cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> compared to the device consisting of OA/TOP-capped QDs, and an approximately 1.8-fold improvement was achieved over QD-LEDs fabricated with bezenethiol ligand-exchanged QDs with respect to the maximum luminance and current efficiency. The turn-on voltage decreased by about −0.6 V through shifting the energy level of the QDs with benzenethiol ligands compared to conventional OA and TOP ligands.</P>
Novel patterning of flexible and transparent Ag nanowire electrodes using oxygen plasma treatment
Kim, Hoijoon,Lee, Giseok,Becker, Stefan,Kim, Ji-Seon,Kim, Hyoungsub,Hwang, Byungil The Royal Society of Chemistry 2018 Journal of Materials Chemistry C Vol.6 No.35
<P>We report a novel patterning method using oxygen plasma treatment for flexible and transparent Ag nanowire electrodes. Using a dry film photoresist as a solid-state film-type photoresist, Ag nanowires were selectively oxidized under oxygen plasma treatment. Microstructural analysis revealed that the Ag nanowires were fully oxidized after 30 s of oxygen plasma treatment, which was also reflected in the changes in the optoelectronic properties of the Ag nanowires. The fully oxidized Ag nanowires could be completely dissolved in NH3 solution (aq.), without using a toxic etchant to form sharp patterns of Ag nanowire electrodes. To further confirm the applicability of the patterning technique demonstrated here in electronic devices, MoS2 thin-film transistors (TFTs) with patterned Ag-nanowire source/drain (S/D) electrodes were fabricated and they showed similar performances to typical MoS2 TFTs with thin-film-type Ti/Au S/D electrodes.</P>
Photoresist-Free Lithographic Patterning of Solution-Processed Nanostructured Metal Thin Films
Shin, Hyunkwon,Kim, Hyunjun,Lee, Hyeongjae,Yoo, Hyeonggeun,Kim, Jinsoo,Kim, Hyoungsub,Lee, Myeongkyu WILEY-VCH Verlag 2008 ADVANCED MATERIALS Vol.20 No.18
<B>Graphic Abstract</B> <P>Nanostructured Ag thin films solution-deposited on glass and plastic substrates are patterned by direct exposure to a pulsed Nd:YAG laser without using a photoresist layer. Sharp-edged patterns with a feature size scaled down to ca. 2 µm are obtainable. <img src='wiley_img/09359648-2008-20-18-ADMA200800157-content.gif' alt='wiley_img/09359648-2008-20-18-ADMA200800157-content'> </P>