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Horyeong Lee,Meng Li,Jungwoo Oh,Hi-Deok Lee 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.1
In this paper, the effective electron Schottky barrier height (ФBn) of the Ni silicide/nsilicon (100) interface was studied in accordance with different thicknesses of the antimony (Sb) interlayer for high performance n-channel MOSFETs. The Sb interlayers, varying its thickness from 2 nm to 10 nm, were deposited by radio frequency (RF) sputtering on lightly doped n-type Si (100), followed by the in situ deposition of Ni/TiN (15/10 ㎚). It is found that the sample with a thicker Sb interlayer shows stronger ohmic characteristics than the control sample without the Sb interlayer. These results show that the effective ФBn is considerably lowered by the influence of the Sb interlayer. However, the current level difference between Schottky diodes fabricated with Sb/Ni/TiN (8/15/10 ㎚) and Sb/Ni/TiN (10/15/10 ㎚) structures is almost same. Therefore, considering the process time and cost, it can be said that the optimal thickness of the Sb interlayer is 8 nm. The effective ФBn of 0.076 eV was achieved for the Schottky diode with Sb/Ni/TiN (8/15/10 ㎚) structure. Therefore, this technology is suitable for high performance n-channel MOSFETs.
Lee, Horyeong,Li, Meng,Oh, Jungwoo,Lee, Hi-Deok The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.1
In this paper, the effective electron Schottky barrier height (${\Phi}_{Bn}$) of the Ni silicide/n-silicon (100) interface was studied in accordance with different thicknesses of the antimony (Sb) interlayer for high performance n-channel MOSFETs. The Sb interlayers, varying its thickness from 2 nm to 10 nm, were deposited by radio frequency (RF) sputtering on lightly doped n-type Si (100), followed by the in situ deposition of Ni/TiN (15/10 nm). It is found that the sample with a thicker Sb interlayer shows stronger ohmic characteristics than the control sample without the Sb interlayer. These results show that the effective ${\Phi}_{Bn}$ is considerably lowered by the influence of the Sb interlayer. However, the current level difference between Schottky diodes fabricated with Sb/Ni/TiN (8/15/10 nm) and Sb/Ni/TiN (10/15/10 nm) structures is almost same. Therefore, considering the process time and cost, it can be said that the optimal thickness of the Sb interlayer is 8 nm. The effective ${\Phi}_{Bn}$ of 0.076 eV was achieved for the Schottky diode with Sb/Ni/TiN (8/15/10 nm) structure. Therefore, this technology is suitable for high performance n-channel MOSFETs.
CNN을 이용한 지진 재난 상황에서의 지능형 교통 시스템
황도경(Dokyung Hwang),황병일(Byeongil Hwang),이호령(Horyeong Lee),김동주(Dongju Kim) 한국정보기술학회 2021 Proceedings of KIIT Conference Vol.2021 No.11
지진 재난 상황에서 CNN을 이용한 효과적인 지능형 도로교통 관제 시스템 (ITS : Intelligent Transportation System) 이 새롭게 제안되었다. 제안된 기술은 YOLO detector를 활용하여 지진 재난 상황에서 빠르고 정확한 도로 위험 요소를 인식하여 차량 사고로 인한 2차 재난 피해를 최소화하는데 기여할 수 있다. 아울러 정확한 인식을 위해 본 논문에서는 수동으로 구축된 사고 이미지 데이터를 사용하여 정확하고 빠른 탐지가 가능하다. 훈련된 모델은 CCTV 영상에서 획득한 이미지를 사용하여 훈련됨으로서 CCTV를 활용한 통합 관제 시스템에서 범용적으로 적용가능한 장점이 있다. An effective intelligent road traffic control system (ITS) using CNN in earthquake disaster situations has been newly proposed. The proposed technology can minimize secondary disaster damage caused by vehicle accidents by recognizing fast and accurate road risk factors in earthquake disaster situations using the YOLO detector. Additionally, this paper enables accurate and rapid detection using manually constructed accident image data for precise recognition. The trained model can be universally applicable in an integrated control system using CCTV as it is trained using images obtained from CCTV images.
Sung-Kwen Oh,Hong-Sik Shin,Kwang-Seok Jeong,Meng Li,Horyeong Lee,Kyumin Han,Yongwoo Lee,Ga-Won Lee,Hi-Deok Lee 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.6
This paper presents a study of the process temperature dependence of Al₂O₃ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of Al₂O₃ film maintained almost the same until 250 ℃, but decreased from 300 ℃. Al₂O₃ film deposited at 250 ℃ was found to have the highest negative fixed oxide charge density (Qf) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), Al₂O₃ film deposited at 250 ℃ had the lowest slow and fast interface trap density. Actually, Al₂O₃ film deposited at 250 ℃ showed the best passivation effects, that is, the highest excess carrier lifetime (τPCD) and lowest surface recombination velocity (Seff) than other conditions. Therefore, Al₂O₃ film deposited at 250 ℃ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.