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Hyuk-Min Kwon,In-Shik Han,Jung-Deuk Bok,Sang-Uk Park,Yi-Jung Jung,Ga-Won Lee,Yi-Sun Chung,Jung-Hwan Lee,Chang Yong Kang,Kirsch, P,Jammy, R,Hi-Deok Lee IEEE 2011 IEEE electron device letters Vol.32 No.5
<P>The behavior of I<SUB>D</SUB> random telegraph signal (RTS) noise of a p-MOSFET with an advanced gate stack of HfO<SUB>2</SUB>/TaN is experimentally investigated and discussed. The I<SUB>D</SUB>-RTS noise is evaluated on a wafer level (100 sites) for statistical evaluation. The observed ratio of I<SUB>D</SUB>-RTS noise on a wafer is quite similar to that of a p-MOSFET with the conventional plasma-SiON dielectric, which means that the noise distribution on a wafer level is independent of the gate oxide structure and/or material. However, the relative magnitude of change of the drain current to the applied current (ΔI<SUB>D</SUB>/I<SUB>D</SUB>) of the p-MOSFETs with high-k (HK) dielectrics is greater than that of p-MOSFETs with conventional plasma-SiON dielectrics by about six times due to the greater number of preexisting bulk traps in the HK dielectric. Therefore, I<SUB>D</SUB>-RTS noise and its associated 1/f noise can present a serious issue to the CMOSFET with an advanced HK dielectric for low-power analog and mixed-signal applications.</P>
Heo, Jin Hyuck,Im, Sang Hyuk,Kim, Hi-jung,Boix, Pablo P.,Lee, Suk Joong,Seok, Sang Il,Mora-Seró,, Ivá,n,Bisquert, Juan American Chemical Society 2012 JOURNAL OF PHYSICAL CHEMISTRY C - Vol.116 No.39
<P>The Sb<SUB>2</SUB>S<SUB>3</SUB>-sensitized photoelectrochemical cells (Sb<SUB>2</SUB>S<SUB>3</SUB>–SPECs) in cobalt electrolyte were fabricated by depositing Sb<SUB>2</SUB>S<SUB>3</SUB> on the macroporous TiO<SUB>2</SUB> nanorods electrodes and consecutively spin-coating P3HT (Poly-3-hexylthiophene) interlayer to relieve the mass transport problem at vicinity of Sb<SUB>2</SUB>S<SUB>3</SUB> and cobalt redox couples and reduce the backward recombination. Through the introduction of P3HT interlayer, we could greatly enhance the power conversion efficiency of Sb<SUB>2</SUB>S<SUB>3</SUB>–SPEC to 4.2% at 1 sun illumination, whereas the Sb<SUB>2</SUB>S<SUB>3</SUB>–SPEC without P3HT interlayer exhibits 3.2% of device efficiency. The electrochemical impedance analysis let us know that the improved device performance was mainly attributed to the reduced backward recombination building up the higher open circuit voltage.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2012/jpccck.2012.116.issue-39/jp305150s/production/images/medium/jp-2012-05150s_0004.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/jp305150s'>ACS Electronic Supporting Info</A></P>
Ying-Ying Zhang,Jungwoo Oh,In-Shik Han,Zhun Zhong,Shi-Guang Li,Soon-Yen Jung,Kee-Young Park,Hong-Sik Shin,Won-Ho Choi,Hyuk-Min Kwon,Wei-Yip Loh,Majhi, P.,Jammy, R.,Hi-Deok Lee IEEE 2009 IEEE transactions on electron devices Vol.56 No.2
<P>Highly thermally stable Ni germanide technology for high performance germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs) is proposed, utilizing Pd incorporation into Ni germanide. The proposed Ni germanide shows not only the improvement of thermal stability but also the reduction of hole barrier height, which can improve the device on-current by reducing the Ni germanide to p+ source/drain contact resistance. The proposed Ni germanide showed a stable sheet resistance of up to 500 degrees C 30-min postgermanidation annealing due to the suppression of agglomeration and oxidation of Ni germanide and the diffusion of Ni and Ge atoms by the incorporated Pd. Therefore, the proposed Ni0.95Pd0.05, alloy could be promising for the high mobility Ge MOSFET applications.</P>
Ying-Ying Zhang,Jungwoo Oh,Shi-Guang Li,Soon-Yen Jung,Kee-Young Park,Ga-Won Lee,Majhi, P.,Hsing-Huang Tseng,Jammy, R.,Hi-Deok Lee IEEE 2010 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.9 No.2
<P>In this paper, thermally stable Ni germanide using a Ni-Pt(1%) alloy and TiN capping layer is proposed for high-performance Ge MOSFETs. The proposed Ni-Pt(1%) alloy structure exhibits low-temperature germanidation with a wide temperature window for rapid thermal processing. Moreover, sheet resistance is stable and the germanide interface shows less agglomeration despite high-temperature postgermanidation anneal up to 550 <SUP>°</SUP>C for 30 min. In addition, the surface of the Ni-Pt(1%) alloy structure is smoother than that of a pure Ni structure both before and after the postgermanidation anneal. Only the NiGe phase and no other phases such as Pt<SUB>x</SUB>Ge<SUB>y</SUB> and Ni<SUB>x</SUB>Pt<SUB>1-x</SUB>Ge<SUB>y</SUB> can be observed in X-ray diffraction results, but X-ray photoelectron spectroscopy shows that PtGe is formed during the postgermanidation anneal. The larger Pt atomic radius is believed to inhibit the diffusion of Ni into the Si substrate, thereby improving the thermal stability of the NiGe. The higher melting point of PtGe is also believed to improve thermal stability. Therefore, this proposed Ni-Pt(1%) alloy could be promising for high-mobility Ge MOSFET applications.</P>
Automated genome-wide visual profiling of cellular proteins involved in HIV infection.
Genovesio, Auguste,Kwon, Yong-Jun,Windisch, Marc P,Kim, Nam Youl,Choi, Seo Yeon,Kim, Hi Chul,Jung, Sungyong,Mammano, Fabrizio,Perrin, Virginie,Boese, Annette S,Casartelli, Nicoletta,Schwartz, Olivier Mary Ann Liebert, Inc 2011 Journal of biomolecular screening Vol.16 No.9
<P>Recent genome-wide RNAi screens have identified >842 human genes that affect the human immunodeficiency virus (HIV) cycle. The list of genes implicated in infection differs between screens, and there is minimal overlap. A reason for this variance is the interdependence of HIV infection and host cell function, producing a multitude of indirect or pleiotropic cellular effects affecting the viral infection during RNAi screening. To overcome this, the authors devised a 15-dimensional phenotypic profile to define the viral infection block induced by CD4 silencing in HeLa cells. They demonstrate that this phenotypic profile excludes nonspecific, RNAi-based side effects and viral replication defects mediated by silencing of housekeeping genes. To achieve statistical robustness, the authors used automatically annotated RNAi arrays for seven independent genome-wide RNAi screens. This identified 56 host genes, which reliably reproduced CD4-like phenotypes upon HIV infection. The factors include 11 known HIV interactors and 45 factors previously not associated with HIV infection. As proof of concept, the authors confirmed that silencing of PAK1, Ku70, and RNAseH2A impaired HIV replication in Jurkat cells. In summary, multidimensional, visual profiling can identify genes required for HIV infection.</P>
흑크롬 태양광 선택흡수막 제조용 도금액의 개발 및 전기화학적 고찰
이태규(Tai-Kyu Lee),조서현(Suh-Hyun Cho),최영희(Young-Hi Chea),오정무(P.Chung-Moo Auh) 한국태양에너지학회 1990 한국태양에너지학회 논문집 Vol.10 No.1
태양에너지 이용시스템 개발에 있어서 태양열을 효율적으로 이용하기 위한 태양광의 선택흡수막의 제조시 가장 중요한 것이 선택흡수막의 파장별 광학적 특성이다. 이러한 광학적 특성은 전기도금액의 조성에 따라 달라지고 전기도금 방법의 선택 및 도금조건에 따라 영향을 받게 된다. 본 연구에서는 미국에서 개발되고 가장 널리 사용되는 ChromOnyx 도금액을 근거로 새로이 Chromic acid-Propionic acid 흑크롬 도금액을 제조하였으며 액을 구성하고 있는 성분별 전기화학적 역할을 고찰하였다.<br/> 실제 전기도금법에 의해 제작된 흑크롬 선택 흡수막의 광학적특성에 관한 연구는 다시 상세히 다루어 발표할 예정이다. The electrochemical approach to the characteristics of black chrome solar selective coatings has been reviewed. Based on the formula of the ChromOnyx bath solution manufactured by Harshaw Company, the chromic acid-propionic acid bath solutions have been prepared by KIER. Comprehensive review of the black chrome electrodeposition mechanism also has been performed on the role played by constituents in the bath solution during electrodeposition. The optical properties such as absorption and emittance of electrodeposited black chrome coatings obtained from the new formula and their surface analysis will be reported in detail.