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Thermal Expansion in Quasi-One-Dimensional, Weakly and Nearly Antiferromagnetic Metals
Rikio Konno,Nobukuni Hatayama 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.1
Thermal expansion in wuasi-one-dimensional (1-D) weakly and nearly antkferromagnetic metals at low temperatures is investigated by using the method of Takahashi and Nakano [3]. The three-dimensional (3-D) character of 1-D weakly and nearly antiferromagnetic metals is phenomenologically considered. this corresponds to taking into account the 3-D character in the 1-D kinetic energy of conduction electrons. The self-consistent renormalization theory of spin fluctuations (the SCR theory) is applied to enable the management of spin fluctuations beyond the random phase approximation. Spin fluctuations are composed of thermal spin fluctuations and zero-point spin fluctuations. We concentrate on thermal spin fluctuations in this study. The effects of thermal spin fluctuations on the thermal expansion are taken into account because the effects of thermal spin fluctuations is much larger than those of zero-point spin fluctuations at low temperatures above the Neel temperature TN. The thermal expansion is studied as the magnetic instability point is approached. We find that the thermal expansion decreases when we introduce a 3-D character into the 1-D electron systems. A strong enhancement of the thermal expansion exists in quasi-1-D weakly and nearly antiferromagnetic metals when the magnetic instability point is approached.
Evaluation Technique for Reliability in Low-Temperature poly-Si
Y. Uraoka,H. Yano,T. Fuyuki,T. Hatayama 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
Analysis of the degradation in n-ch TFT under dynamic stress by using pico-second timeresolved emission microscopy was performed. We have successfully detected an emission at the pulse fall edge. Emission intensity increased with decreasing pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependence, we proposed model considering electron traps in poly-Si. Further, we analyzed thermal degradation in low temperature poly-Si thin film transistors by using infrared thermal imaging microscopy. Non uniform distribution was observed in the saturation region along the gate length. The increase of temperature was remarkable at large gate width, therefore, large voltage shift was observed. A universal relationship was obtained, independent of crystallinity of poly-Si. This curve suggests that we should take the degradation of gate oxide such as electron traps into account.
A NEW ALGORITHM GENERATING DIGITAL ELEVATION MODEL FROM CONTOUR MAPS
Prima Oky Dicky Archiansyah,Yokoyama, Ryuzo,Hatayama, Takaki 대한원격탐사학회 2001 International Symposium on Remote Sensing Vol.17 No.1
A new algorithm to generate a digital elevation models (DEMs) from contour maps is proposed. A value of elevation at a grid paint is calculated by applying a 3rd order interpolation function along a connected line segments penetrating the grid point to the two Contour lines in the neighborhood Generated DEMs for test areas in the 1/25,000 scale Japanese topographical maps demonstrated excellent results.
Hot Carrier Effect in Low-Temperature Poly-Si TFTs with Sputtered Gate SiO2 Films
Yukiharu Uraoka,Hiroshi Yano,Makoto Miyashita,Tadashi Serikawa,Takashi Fuyuki,Tomoaki Hatayama,Yuta Sugawara 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.4
We investigated the reliability of low-temperature poly-Si thin film transistor (TFT) by using Si films and gate oxides fabricated by using RF sputtering method. To evaluate the immunity against the hot carrier effect, we imposed DC and dynamic stress on the sputtered TFT. We found that reliability was higher than it was a conventional TFT. The sputtered TFT showed very little degradation. Observation by emission microscope was performed to analyze their strong immunity. In a conventional TFT, emission was observed only at the drain edge. However, in sputtered TFT, emission was observed not only at the drain edge but also at the source edge. We proposed a model explaining the emission in a sputtered TFT. To prove this model, we examined the emission in a SOI TFT. A similar emission mode supports our model. Sputtered TFTs are very promising for next generation.?