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성별과 연령에 따라 선호되는 제스처 명령어의 특성 차이에 대한 연구
Hanul Bang,Eunjung Choi,Heejin Kim,Bora Kang,Mingyu Lee,Seungjae Oh,Dong Yeong Jeong,Min K. Chung 대한산업공학회 2013 대한산업공학회 추계학술대회논문집 Vol.2013 No.11
Objective: This study aims to identify the differences of preferred gestures for devices in kitchen and bathroom according to gender and age. Background: Recently, various studies related to gesture interfaces have focused on designing intuitive gesture commands to enhance the usability of the interfaces, and they have tried to derive gestures from users. However, there are few studies to identify the differences of preferred gestures according to age or gender. Method: 32 participants were recruited with consideration of various ages and gender. In the experiment, participants evaluated their preference for each gesture candidate using a 100-point scale after watching each video showing gesture candidates. Two criteria were used to select preferred gestures for each command: average point of preference (above 50) and the frequency selected as the most preferred gesture among gesture candidates (above median). Results: As a result, although several gestures were equally preferred among the different age groups and gender groups, different characteristics for preferred gestures were identified according to the groups. Conclusion: To enhance the usability of gesture interface, the preference properties for gesture commands according to age or gender should be considered from the beginning stage of designing gestures. Application: The results of this study can be used as a guideline to design user preferred gesture and can contribute to alleviate ‘Digital divide’ phenomenon.
Hanul Moon,Mincheol Kim,Seunghyup Yoo IEEE 2011 IEEE electron device letters Vol.32 No.8
<P>We propose a systematic fabrication method for stable high-performance organic thin-film transistors (TFTs) that are potentially compatible with high-density integrated circuits. Ag/PEDOT:PSS bilayers provide source/drain (S/D) electrodes with low sheet resistance and efficient hole injection capabilities, leading to high-performance bottom-contact pentacene TFTs with a saturation mobility of 0.19 cm<SUP>2</SUP>/ V·s. Patterned dielectric layers based on a fluoropolymer Cytop function as a hydrophobic bank structure to define S/D electrodes in a self-aligned manner from Ag ink and a PEDOT:PSS solution while simultaneously improving the electrical stability of pentacene TFTs.</P>
Characteristics of preferred gestures for home appliances and devices
Hanul Bang,Eunjung Choi,Heejin Kim,Bora Kang,Mingyu Lee,Seungjae Oh,Dong Yeong Jeong,Min K. Chung,Sung H. Han 대한인간공학회 2014 대한인간공학회 학술대회논문집 Vol.2014 No.5
This study aims to identify the characteristics of preferred gestures for using electronic devices by age. Gestures are affected by the personal mental concept, which varies with age. This is, gesture preference could be different depending on age. Few studies have been conducted to identify the similarities and differences of preferred gestures by age. In an experiment, a total of 32 participants were recruited with various age bands. The participants evaluated their preference level for each gesture candidate using a 100-point scale after watching a video showing gesture candidates. If the average preference score for the gesture was evaluated higher than 50, the gesture was defined as the preferred one. This study performed statistical analyses to further investigate differences and similarities of the preferred gestures for each command. In addition, the top two gestures with the highest score among the preferred gestures were analyzed. The characteristics of the preferred gestures were also suggested by age.
Controlling the Threshold Voltage of Organic Thin-Film Transistors by Transition Metal Oxides
Hanul Moon,Dongmo Im,Seunghyup Yoo IEEE 2013 IEEE electron device letters Vol.34 No.8
<P>We demonstrate an effective, noble metal-free method to control the threshold voltages (VT) of organic thin-film transistors (OTFTs). Through covering an Al gate electrode with a high work function (WF) transition metal oxide (TMO) layer of WO<SUB>3</SUB> or MoO<SUB>3</SUB>, VT is shifted in a positive direction from -2.15 V to -1.40 V or -0.89 V, respectively, with respect to that of OTFTs with a bare Al gate electrode. Together with a thin dielectric layer of cross-linked Cytop, the reduced magnitude of V<SUB>T</SUB> allows for a low-voltage switching operation with a gate voltage as small as 2 V. The amount of V<SUB>T</SUB> shift is shown to correlate well with the change in the WF of the gate electrode upon TMO deposition.</P>