http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Guicui (검색결과 4 건)
- 무료
- 기관 내 무료
- 유료
-
An Excess Carrier Lifetime Extraction Method for Physics-based IGBT Models
Guicui Fu,Peng Xue 전력전자학회 2016 JOURNAL OF POWER ELECTRONICS Vol.16 No.2
An excess carrier lifetime extraction method is derived for physics-based insulated gate bipolar transistor (IGBT) models with consideration of the latest development in IGBT modeling. On the basis of the 2D mixed-mode Sentaurus simulation, the clamp turn-off test is simulated to obtain the tail current. The proposed excess carrier lifetime extraction method is then performed using the simulated data. The comparison between the extracted results and actual lifetime directly obtained from the numerical device model precisely demonstrates the accuracy of the proposed method.
-
An Excess Carrier Lifetime Extraction Method for Physics-based IGBT Models
Fu, Guicui,Xue, Peng The Korean Institute of Power Electronics 2016 JOURNAL OF POWER ELECTRONICS Vol.16 No.2
An excess carrier lifetime extraction method is derived for physics-based insulated gate bipolar transistor (IGBT) models with consideration of the latest development in IGBT modeling. On the basis of the 2D mixed-mode Sentaurus simulation, the clamp turn-off test is simulated to obtain the tail current. The proposed excess carrier lifetime extraction method is then performed using the simulated data. The comparison between the extracted results and actual lifetime directly obtained from the numerical device model precisely demonstrates the accuracy of the proposed method.
-
Investigation on Intermittent Life Testing Program for IGBT
Yu Cheng,Guicui Fu,Maogong Jiang,Peng Xue 전력전자학회 2017 JOURNAL OF POWER ELECTRONICS Vol.17 No.3
The reliability issue of IGBT is a concern for researchers given the critical role the device plays in the safety of operations of the converter system. The reliability of power devices can be estimated from the intermittent life test, which aims to simulate typical applications in power electronics in an accelerated manner to obtain lifetime data. However, the test is time-consuming, as testing conditions are not well considered and only rough provisions have been made in the current standards. Acceleration of the test by changing critical test conditions is controversial due to the activation of unexpected failure mechanisms. Therefore, full investigations were conducted on critical test conditions of intermittent life test. A design optimization process for IGBT intermittent life testing program was developed to save on test times without imposing additional failure mechanisms. The applicability of the process has been supported by a number of tests and failure analysis of the test results. The process proposed in this paper can guide the test process for other power semiconductors.
-
Investigation on Intermittent Life Testing Program for IGBT
Cheng, Yu,Fu, Guicui,Jiang, Maogong,Xue, Peng The Korean Institute of Power Electronics 2017 JOURNAL OF POWER ELECTRONICS Vol.17 No.3
The reliability issue of IGBT is a concern for researchers given the critical role the device plays in the safety of operations of the converter system. The reliability of power devices can be estimated from the intermittent life test, which aims to simulate typical applications in power electronics in an accelerated manner to obtain lifetime data. However, the test is time-consuming, as testing conditions are not well considered and only rough provisions have been made in the current standards. Acceleration of the test by changing critical test conditions is controversial due to the activation of unexpected failure mechanisms. Therefore, full investigations were conducted on critical test conditions of intermittent life test. A design optimization process for IGBT intermittent life testing program was developed to save on test times without imposing additional failure mechanisms. The applicability of the process has been supported by a number of tests and failure analysis of the test results. The process proposed in this paper can guide the test process for other power semiconductors.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
