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Fucheng Wang,산얄 심피,최지원,조재웅,Yifan Hu,Xinyi Fan,Suresh Kumar Dhungel,이준신 한국전기전자재료학회 2023 전기전자재료학회논문지 Vol.36 No.3
As a potential alternative to flash memory, HfO2/Al2O3 stacks appear to be a viable option as charge capture layers in charge trapping memories. The paper undertakes a review of HfO2/Al2O3 stacks as charge trapping layers, with a focus on comparing the number, thickness, and post-deposition heat treatment and γ-ray and white x-ray treatment of such stacks. Compared to a single HfO2 layer, the memory window of the 5-layered stack increased by 152.4% after O2 annealing at ±12 V. The memory window enlarged with the increase in number of layers in the stack and the increase in the Al/Hf content in the stack. Furthermore, our comparison of the treatment of HfO2/Al2O3 stacks with varying annealing temperatures revealed that an increased annealing temperature resulted in a wider storage window. The samples treated with O2 and subjected to various γ radiation intensities displayed superior resistance. and the memory window increased to 12.6 V at ±16 V for 100 kGy radiation intensity compared to the untreated samples. It has also been established that increasing doses of white x-rays induced a greater number of deep defects. The optimization of stacking layers along with post-deposition treatment condition can play significant role in extending the memory window.
Effect of Be codoping on the photoluminescence spectra of GaMnAs
Fucheng Yu,P.B. Parchinskiy,김도진,김효진,Young Eon Ihm,최덕균 한국물리학회 2011 Current Applied Physics Vol.11 No.3
The measurements of the photoluminescence (PL) spectra have been performed on GaAs, GaMnAs,GaAs:Be, and GaMnAs:Be samples to study the effect of Be codoping on the PL spectra of GaMnAs layers grown via low temperature molecular beam epitaxy. Based on the temperature dependence of the exciton-related transitions energy, it was shown that doping GaAs with Mn and Be leads to modification of the temperature dependence of the band gap. It was shown that although Be itself weakly affected the PL spectra of GaAs, codoping with Be significantly modified the PL spectra of GaMnAs.
The Effects of Codoping of Be and Mg on Incorporation of Mn in GaAs
Yu, Fucheng,Gao, Cunxu,Parchinskiy, P.B.,Chandra, Sekar.P.V.,Kim, Do-Jin,Kim, Chang-Soo,Kim, Hyo-Jin,Ihm, Young-Eon Materials Research Society of Korea 2008 한국재료학회지 Vol.18 No.8
Samples of GaMnAs, GaMnAs codoped with Be, and GaMnAs simultaneously codoped with Be and Mg were grown via low-temperature molecular beam epitaxy (LT-MBE). Be codoping is shown to take the Ga sites into the lattice efficiently and to increase the conductivity of GaMnAs. Additionally, it shifts the semiconducting behavior of GaMnAs to metallic while the Mn concentration in the GaMnAs solid solution is reduced. However, with simultaneous codoping of GaMnAs with Be and Mg, the Mn concentration increases dramatically several times over that in a GaMnAs sample alone. Mg and Be are shown to eject Mn from the Ga sites to form MnAs and MnGa precipitates.
Design of Preview Controller for Linear Continuous-time Systems with Input Delay
Yonglong Liao,Fucheng Liao 제어·로봇·시스템학회 2018 International Journal of Control, Automation, and Vol.16 No.3
This paper makes it possible to design a preview controller for linear continuous-time systems with input delay, which expands the preview control theory. An augmented error system is established. And a variable substitution is used to transform the delay preview control system into a delay-free one whose preview controller uses the future value of the augmented state vector. The future value of the augmented state vector is estimated by the information of the current state vector, the control input on the past time window, and the reference signal on the future time window. Under the assumption of zero initial conditions, a simplified controller with both delay compensation and preview compensation is obtained for the original system. In addition, a preview controller with full-order observer is offered. Finally, simulation results are presented to illustrate the effectiveness and robustness of the controller.
Robust Tracking Control with Preview Action for Uncertain Discrete-time Systems
Li Li,Fucheng Liao,Zhenqin Ren 제어·로봇·시스템학회 2020 International Journal of Control, Automation, and Vol.18 No.3
This paper discusses the robust preview control problem for uncertain discrete-time systems, where future reference and disturbance signals over a finite horizon can be previewed. First, in order to utilize future information for the controller design, an augmented error system including future information on previewable signals is constructed by using two new auxiliary variables related to the original system state and input. Second, sufficient conditions for designing a robust state feedback preview controller are given in terms of solutions to a set of linear matrix inequalities (LMIs). A preview controller is designed, one which guarantees that for admissible uncertainties and disturbances, the output of the closed-loop system can asymptotically track the reference signal. Finally, numerical simulation examples illustrate the superiority of the desired preview controller for the uncertain system.
A design method of preview controller for linear continuous-time systems with multiple input delays
Yonglong Liao,Fucheng Liao 제어로봇시스템학회 2017 제어로봇시스템학회 국제학술대회 논문집 Vol.2017 No.10
This paper studies a preview control problem for a class of linear continuous-time systems with multiple input delays. Firstly, the preview problem is transformed into a regulation one via constructing an augmented error system. Secondly, a variable substitution is given to eliminate the input delays. Then, based on the solution of an algebraic Riccati equation, a controller with delay compensation and preview compensation is obtained. Furthermore, the existence conditions of the preview controller and the asymptotic tracking properties of the closed-loop system are discussed. Finally, a numerical simulation is given to illustrate the effectiveness of the design method.
Recent Advances in a-IGZO Thin Film Transistor Devices: A Short Review
Jingwen Chen,Fucheng Wang,Yifan Hu,조재웅,정여진,Duy Phong Pham,이준신 한국전기전자재료학회 2023 전기전자재료학회논문지 Vol.36 No.5
In recent years, the transparent amorphous oxide thin film transistor represented by indium-gallium-zinc-oxide (IGZO) has become the first choice of the next generation of integrated circuit control components. This article contributes an overview of IGZO thin-film transistors (TFTs), including their fundamental principles and recent advancements. The paper outlines various TFT structures and places emphasis on the fabrication process of the active layer. The result showed that the size of the active layer including the length-to-width ratio and the width could have a significant effect on the mobility. And the process of TFT could influence the crystal structure of IGZO thin film. Furthermore, the article presents an overview of recent applications of IGZO TFTs, such as their use in display drivers and TFT memories. At last, the future development of IGZO TFT is forecasted in this paper.