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Talantsev, A,Lu, Y,Fache, T,Lavanant, M,Hamadeh, A,Aristov, A,Koplak, O,Morgunov, R,Mangin, S IOP 2018 Journal of Physics, Condensed Matter Vol.30 No.13
<P>Two synthetic antiferromagnet bilayer systems with strong perpendicular anisotropy CoFeB/Ta/CoFeB and Pt/Co/Ir/Co/Pt have been grown using sputtering techniques. For both systems two types of magnetization transitions have been studied. The first one concerns transitions from a state where magnetizations of the two magnetic layers are parallel (<I>P</I> state) to a state where magnetizations of the two layers are aligned antiparallel (<I>AP</I> state). The second one concerns transitions between the two possible antiparallel alignments (<I>AP</I>+ to <I>AP</I>−). For both systems and both transitions after-effect measurements can be understood in the frame of nucleation—propagation model. Time derivative analysis of magnetic relaxation curves and mapping of the first order reversal curves at different temperature allowed us to demonstrate the presence of different pinning centers, which number can be controlled by magnetic field and temperature.</P>
Spin-orbit torque-induced switching in ferrimagnetic alloys: Experiments and modeling
Je, Soong-Geun,Rojas-Sá,nchez, Juan-Carlos,Pham, Thai Ha,Vallobra, Pierre,Malinowski, Gregory,Lacour, Daniel,Fache, Thibaud,Cyrille, Marie-Claire,Kim, Dae-Yun,Choe, Sug-Bong,Belmeguenai, Mohamed American Institute of Physics 2018 Applied Physics Letters Vol.112 No.6
Effect of Co layer thickness on magnetic relaxation in Pt/Co/Ir/Co/Pt/GaAs spin valve
Morgunov, R.B.,L'vova, G.L.,Talantsev, A.D.,Koplak, O.V.,Fache, T.,Mangin, S. North-Holland Pub. Co 2018 Journal of magnetism and magnetic materials Vol.459 No.-
<P><B>Abstract</B></P> <P>Long magnetic relaxation (up to few hours) between stable magnetic states was analyzed in Pt/Co/Ir/Co/Pt/GaAs heterostructures of different Co layers thickness. The experimental data were compared to a large variety of theoretical models amongst which the <I>Fatuzzo-Labrune</I> one seems to be the more relevant. The contributions from domain nucleation and domain wall motion to magnetic relaxation of the spin valves were separated and evaluated. The increase of Co layer thickness suppresses the domain nucleation and enhances the domain wall propagation. The obtained data provide an understanding of the limitations of switching time in the spin valves of large area necessary for GMR biosensors.</P> <P><B>Highlights</B></P> <P> <UL> <LI> In Pt/Co/Ir/Co/Pt/GaAs heterostructures, magnetic relaxation obeys <I>Fatuzzo-Labrune</I> formalism. </LI> <LI> Contributions of reversal phase and domain walls to the magnetic relaxation of the spin valves were distinguished. </LI> <LI> Reversal phase and domain walls contributions to the magnetic relaxation depend on Co layer thickness. </LI> </UL> </P>