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RISS 인기검색어
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- 저자 : Demirezen (검색결과 4 건)
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S. Demirezen,S. Altındal,I. Uslu 한국물리학회 2013 Current Applied Physics Vol.13 No.1
The forward and reverse bias currentevoltage (IeV), capacitance/conductanceevoltage (C/GeV) characteristics of the fabricated Au/PVA (Bi-doped)/n-Si photodiode have been investigated both in dark and under 250 W illumination intensity at room temperature. The energy density distribution profile of Nss was extracted from the forward bias IeV measurements by taking the voltage dependence of effective barrier height (Fe) and Rs for photodiode both in dark and under 250 W illumination cases. The exponential growth of the Nss from midgap toward the bottom of the conductance band is very apparent for two cases. The obtained high value of n and Rs were attributed to the particular distribution of Nss at metal/PVA interface, surface and fabrication processes, barrier inhomogeneity of interfacial polymer layer and the form of barrier height at M/S interface. While the values of C and G/w increase Rs and Rsh decrease under illumination, due to the illumination induced electronehole pairs in depletion region. The voltage dependent Nss profile was also obtained from the dark and illumination capacitance at 1 MHz and these values of Nss are in good agreement. In addition, the fill factor (FF) under 250 W illumination level was found as 28.5% and this value of FF may be accepted sufficiently high. Thus, the fabricated Au/ PVA (Bi-doped)/n-Si structures are more sensitive to light, proposing them as a good candidate as a photodiode or capacitance sensor for optoelectronic applications in modern electronic industry.
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S. Demirezen,S. Altındal 한국물리학회 2010 Current Applied Physics Vol.10 No.4
The current-transport mechanisms of (Ni/Au)/Al0.22Ga0.78N/AlN/GaN Schottky barrier diodes (SBDs) have been investigated in the wide temperature range of 80–400 K. The analysis of the main electrical characteristics such as zero-bias barrier height (ΦB0), ideality factor (n) and series resistance (Rs) were found strongly temperature dependent. The conventional Richardson plot of ln (I0/T2) vs. 103/T show two linear regions in the temperature range of 80–200 K and 240–400 K. The value of Richardson constant (A*) obtained from these two linear regions were found to be 3.25 × 10-12 and 1.28 × 10-9 A/㎠ K2, respectively, which are much lower than the theoretical value of 27.64 A/㎠ K2· While ΦB0 increases, n decreases with increasing temperature. Such temperature dependent of Richardson plot and main electrical parameters can be explained on the basis of the thermionic emission (TE) theory with double Gaussian distribution (GD) of the barrier heights (BHs) due to the barrier height (BH) inhomogeneities at the metal/semiconductor (M/S) interface. Therefore, the modified (ln(I0/T2) - q2σ20/2k2T2) vs. q/kT gives the mean BHs (ΦB0) of 1.40 and 0.68 eV and standard deviation σs of 0.184 and 0.082 V, respectively. We also found that the values of Rs obtained from Cheung's method depend strongly on temperature and abnormally increased with increasing temperature.
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S. Demirezen,Z. Sönmez,U. Aydemir,Ş. Altındal 한국물리학회 2012 Current Applied Physics Vol.12 No.1
The forward and reverse bias currentevoltage (IeV), capacitanceevoltage (CeV) and conductance evoltage (G/ueV) characteristics of the Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) have been investigated at room temperature by taking the interface states (Nss) and series resistance (Rs) effects into account. The voltage dependent profiles of resistance (Ri) were obtained from both the IeV and C/GeV measurements by using Ohm’s Law and Nicollian methods. The obtained values of Ri with agreement each other especially at sufficiently high bias voltages which correspond the value of Rs of the diode. Therefore, the energy density distribution profile of Nss was obtained from the forward bias IeV data taking the bias dependence of the effective barrier height (BH) Fe and Rs into account. The high value of ideality factor (n) was attributed to high density of Nss and interfacial polymer layer at metal/semiconductor (M/S) interface. In order to examine the frequency dependence of some of the electrical parameters such as doping donor concentration (ND), Fe, Rs and Nss values, CeV and G/ueV measurements of the diode were performed at room temperature in the frequency range of 50 kHze5 MHz. Experimental results confirmed that the Nss, Rs and interfacial layer are important parameters that influence electrical characteristics of SBD. The forward and reverse bias currentevoltage (IeV), capacitanceevoltage (CeV) and conductance evoltage (G/ueV) characteristics of the Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) have been investigated at room temperature by taking the interface states (Nss) and series resistance (Rs) effects into account. The voltage dependent profiles of resistance (Ri) were obtained from both the IeV and C/GeV measurements by using Ohm’s Law and Nicollian methods. The obtained values of Ri with agreement each other especially at sufficiently high bias voltages which correspond the value of Rs of the diode. Therefore, the energy density distribution profile of Nss was obtained from the forward bias IeV data taking the bias dependence of the effective barrier height (BH) Fe and Rs into account. The high value of ideality factor (n) was attributed to high density of Nss and interfacial polymer layer at metal/semiconductor (M/S) interface. In order to examine the frequency dependence of some of the electrical parameters such as doping donor concentration (ND), Fe, Rs and Nss values, CeV and G/ueV measurements of the diode were performed at room temperature in the frequency range of 50 kHze5 MHz. Experimental results confirmed that the Nss, Rs and interfacial layer are important parameters that influence electrical characteristics of SBD.
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A. Kaya,Ö. Vural,H. Tecimer,S. Demirezen,S¸ . Altındal 한국물리학회 2014 Current Applied Physics Vol.14 No.3
Au/PVC þ TCNQ/p-Si structure was fabricated and real and imaginary parts of the dielectric constant ( 3 0 , 3 00), loss tangent (tand), and the real and imaginary parts of the electric modulus (M0 , M00) and ac conductivity (sac) of this structure have been investigated in wide frequency a range of 1 kHze5 MHz at room temperature. All of these parameters were found strong function of frequency and voltage especially in the inversion and depletion regions at low frequencies due to interfacial polarization and charges at interface states (Nss). The decrease in 3 0 and 3 00 with increasing frequency indicated that the interfacial dipoles have less time to orient themselves in the direction of the alternate field. While the value of M0 increase with increasing frequency and reach a maximum, M00 shows a peak and the peak position shifts to higher frequency with increasing applied voltage. The ln(sac) vs ln(u) plot of the structure for 0.5 V has three linear regions (I, II and III) with different slopes which correspond to low, intermediate and high frequency ranges, respectively. Such behavior of ln(sac) vs ln(u) plot indicated that there are three different conduction mechanisms in the Au/PVC þ TCNQ/p-Si structure at room temperature.
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