Coexistence of resistive switching and magnetism modulation in sol-gel derived nanocrystalline spinel Co3O4 thin films

Chuangye Yao,Wei Hu,Muhammad Ismail,Santhosh Kumar Thatikonda,Aize Hao,Shuai He,Ni Qin,Wenhua Huang,Dinghua Bao 한국물리학회 2019 Current Applied Physics Vol.19 No.11

We report the coexistence of resistive switching and magnetism modulation in the Pt/Co3O4/Pt devices, where the effects of thermal annealing and film thickness on the resistive and magnetization switching were investigated. The sol-gel derived nanocrystalline Co3O4 thin films obtained crack-free surface and crystallized cubic spinel structure. The 110 nm Co3O4 film based device annealed at 600 °C exhibited optimum resistive switching parameters. From I–V curves fitting and temperature dependent resistance, the conduction mechanism in the high-voltage region of high resistance state was dominated by Schottky emission. Magnetization-magnetic field loops demonstrated the ferromagnetic behaviors of the Co3O4 thin films. Multilevel saturation magnetization of the Co3O4 thin films can be easily realized by tuning the resistance states. Physical resistive switching mechanism can be attributed to the rejuvenation and annihilation of conductive filament consisting of oxygen vacancies. Results suggest that Pt/Co3O4/Pt device shows promising applications in the multifunctional electromagnetic integrated devices.

Graphene-incorporated Photoelectrodes for Dye-sensitized Solar Cells#

Chuangye Ge,Mohammad Mahbubur Rahman,Narayan Chandra Deb Nath,주명종,노광모,이재준 대한화학회 2015 Bulletin of the Korean Chemical Society Vol.36 No.3

Graphene, a single-atom-thick planar sheet of hexagonally arrayed sp2 carbon atoms has attracted significant interest in the last decade in material science and energy related research. In particular, graphene has attracted considerable attention for the development of photoelectrodes of dye-sensitized solar cells (DSSCs). The incorporation of graphene into DSSCs photoelectrodes induced lower recombination, increased electron transport kinetics, enhanced light scattering effect, and concurrently enhanced the power conversion efficiency (PCE). Graphene has been incorporated into the TiO2 either by mixing or as an interfacial layer between TCO|TiO2, TiO2|dye, and TiO2|TiO2. Few studies have demonstrated the incorporation of graphene into ZnO- and NiO-based DSSCs. In all cases, the graphene-incorporated DSSC showed improved PCE. This article reviews the recent advances in the use of graphene as a photoelectrode building material in dye-sensitized solar cells (DSSCs).

Electrodeposition of Cu₂S nanoparticles on fluorine-doped tin oxide for efficient counter electrode of quantum-dot-sensitized solar cells

Wang, Jia,Rahman, Md. Mahbubur,Ge, Chuangye,Lee, Jae-Joon Elsevier 2018 Journal of industrial and engineering chemistry Vol.62 No.-

<P><B>Abstract</B></P> <P>This study demonstrated a single-step potentiostatic method for the electrodeposition of copper (I) sulfide (Cu<SUB>2</SUB>S) nanoparticles onto fluorine-doped tin oxide (FTO) electrode from an aqueous solution of CuCl<SUB>2</SUB> and thiourea (TU) to develop counter electrodes (CEs) for quantum-dot sensitized solar cells (QDSSCs). The homogeneously distributed and optimized Cu<SUB>2</SUB>S–CE exhibited an improved catalytic activity in the reduction of polysulfide (S<SUP>2−</SUP>/S<SUB>n</SUB> <SUP>2−</SUP>) electrolyte, which resulted in a power conversion efficiency (PCE) of 4.24% with a short-circuit current density (<I>J<SUB>sc</SUB> </I>), open-circuit voltage (<I>V<SUB>oc</SUB> </I>), and fill factor (<I>FF</I>) of 19.60mA/cm<SUP>2</SUP>, 0.445V, and 48.62%, respectively, for PbS/CdS/ZnS QDs sensitized QDSSCs, while the Pt counterpart exhibited a PCE of 1.17%. The superior photovoltaic performance of this Cu<SUB>2</SUB>S–CEs based QDSSC compared to the Pt counterpart is due to its greater electrocatalytic activity and lower charge transfer resistance (<I>R<SUB>CT</SUB> </I>) at the Cu<SUB>2</SUB>S–CEs/(S<SUP>2−</SUP>/S<SUB>n</SUB> <SUP>2−</SUP>) interface. This strategy provides an effective, low-cost, and non-Pt electrode for QDSSCs, which is promising for other electrochemical applications.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Cu<SUB>2</SUB>S was electrodeposited onto FTO by a single-step potentiostatic method. </LI> <LI> The Cu<SUB>2</SUB>S–CE showed excellent catalytic activity for the reduction of S<SUB>n</SUB> <SUP>2−</SUP>. </LI> <LI> This Cu<SUB>2</SUB>S–CE based QDSSC outperformed the PV performance of a Pt–CE based QDSSC. </LI> <LI> A maximum PCE of 4.24% was attained in a CdS/PbS/ZnS QD-sensitized cell. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>

Electrodeposition of Cu2S nanoparticles on fluorine-doped tin oxide for efficient counter electrode of quantum-dot-sensitized solar cells

Jia Wang,Md. Mahbubur Rahman,Chuangye Ge,이재준 한국공업화학회 2018 Journal of Industrial and Engineering Chemistry Vol.62 No.-

This study demonstrated a single-step potentiostatic method for the electrodeposition of copper (I) sulfide (Cu2S) nanoparticles onto fluorine-doped tin oxide (FTO) electrode from an aqueous solution of CuCl2 and thiourea (TU) to develop counter electrodes (CEs) for quantum-dot sensitized solar cells (QDSSCs). The homogeneously distributed and optimized Cu2S–CE exhibited an improved catalytic activity in the reduction of polysulfide (S2−/Sn2−) electrolyte, which resulted in a power conversion efficiency (PCE) of 4.24% with a short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) of 19.60 mA/cm2, 0.445 V, and 48.62%, respectively, for PbS/CdS/ZnS QDs sensitized QDSSCs, while the Pt counterpart exhibited a PCE of 1.17%. The superior photovoltaic performance of this Cu2S–CEs based QDSSC compared to the Pt counterpart is due to its greater electrocatalytic activity and lower charge transfer resistance (RCT) at the Cu2S–CEs/(S2−/Sn2−) interface. This strategy provides an effective, low-cost, and non-Pt electrode for QDSSCs, which is promising for other electrochemical applications.

Dietary supplementation of Eucommia leaf extract to growing-finishing pigs alters muscle metabolism and improves meat quality

Shen Zhenglei,Liu Chuxin,Deng Chuangye,Guo Qiuping,Li Fengna,Shen Qingwu W. 아세아·태평양축산학회 2024 Animal Bioscience Vol.37 No.4

Objective: The objective of this study was to investigate the influence of dietary supplementation of Eucommia ulmoides leaf extract (ELE) on muscle metabolism and meat quality of pigs with and without pre-slaughter transportation. Methods: In a 43-day feeding experiment, a total of 160 pigs with an initial body weight 60.00±2.00 kg were randomly assigned into four groups in a completely randomized design with 10 replicates. Pigs in groups A and C were fed a basal diet and pigs in groups B and D were fed a basal diet supplemented with 0.5% ELE. Pigs were slaughtered with (group B and D) or without (group A and C) pre-slaughter transport. Muscle chemical composition, postmortem glycolysis, meat quality and muscle metabolome were analyzed. Results: Dietary ELE supplementation had no effect on the proximate composition of porcine muscle, but increased free phenylalanine, proline, citruline, norvaline, and the total free amino acids in muscle. In addition, dietary ELE increased decanoic acid and eicosapentaenoic acid, but decreased heptadecanoic acid, oleic acid, trans-oleic acid, and monounsaturated fatty acids in muscle. Meat quality measurement demonstrated that ELE improved meat water holding capacity and eliminated the negative effects of pre-slaughter transport on meat cooking yield and tenderness. Dietary ELE reduced muscle glycolytic potential, inhibited glycolysis and muscle pH decline in the postmortem conversion of muscle to meat and increased the activity of citrate synthase in muscle. Metabolomics analysis by liquid chromatographic tandem mass spectrometric showed that ELE enhanced muscle energy level, regulated AMP-activated protein kinase (AMPK) signaling, modulated glycogenolysis/glycolysis, and altered the metabolism of carbohydrate, fatty acids, ketone bodies, amino acids, purine, and pyrimidine. Conclusion: Dietary ELE improved meat quality and alleviated the negative effect of preslaughter transport on meat quality by enhancing muscle oxidative metabolism capacity and inhibiting glycolysis in postmortem muscle, which is probably involved its regulation of AMPK.

Ti-doping induced antiferroelectric to ferroelectric phase transition and electrical properties in Sm-PbZrO3 thin films

Thatikonda Santhosh Kumar,Huang Wenhua,Du Xingru,Yao Chuangye,Ke Yifu,Wu Jiang,Qin Ni,Bao Dinghua 한국물리학회 2021 Current Applied Physics Vol.24 No.-

The antiferroelectric (Pb0.985Sm0.01) (Zr1-xTix)O3 (Ti-PSZO) thin films were synthesized on Pt(111)/Ti/SiO2/Si substrates using a chemical solution deposition method. The films were crystallized in the perovskite phase with a preferential orientation along (111) direction. With Ti doping in PSZO, a gradual transformation from antiferroelectric to ferroelectric phase transition was noticed at room temperature owing to the Ti doping induced lattice distortion. The phase transition has been confirmed through the P - E hysteresis loops, X-ray diffraction (peak shifting), capacitance-voltage measurements, and Raman scattering analysis. The thin film with Ti = 0.15 doping displayed a ferroelectric behavior with high dielectric constant and large dielectric tunability of about 62%. Also, Ti doping altered the Curie temperature (Tc) and enhanced the order of dielectric diffuseness. It is believed that Ti-doping in PSZO is an effective way to induce an antiferroelectric - ferroelectric phase transition and to tailor the electrical characteristics of PSZO thin films.

Highly frequency-, temperature-, and bias-stable dielectric properties of 500 °C processed Bi2SiO5 thin films with low dielectric loss

Yifu Ke,Wenhua Huang,Santhosh Kumar Thatikonda,Ruqi Chen,Chuangye Yao,Ni Qin,Dinghua Bao 한국물리학회 2020 Current Applied Physics Vol.20 No.6

Excellent dielectric frequency, bias, and temperature stability of bismuth silicate (Bi2SiO5, BSO) thin films with a low dielectric loss has been obtained in this study. The thin films were prepared on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method at a relatively low annealing temperature of 500 °C. The BSO films have a preferred growth along (200) orientation with dense fine-grained surface morphology. The dielectric constant and dielectric loss of the thin film annealed at 500 °C are 57 and 0.01, respectively, at 100 kHz, with little change between 1 kHz and 100 kHz and in the bias electric field range between−250 kV/cm and 250 kV/cm, indicating that the thin film exhibits a low dielectric loss as well as excellent frequency and bias field stability. The dielectric- temperature measurements confirmed that the BSO thin film annealed at 500 °C also has good temperature stability between 150 K and 450 K. Our results suggest that the BSO thin films have potential applications in the next-generation integrated capacitors.