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Hong, Woong-Ki,Lee, Chongoh,Nepal, Dhriti,Geckeler, Kurt E,Shin, Kwanwoo,Lee, Takhee IOP Pub 2006 Nanotechnology Vol.17 No.22
<P>The effect of high-energy proton irradiation on the physical properties of carbon nanotubes (CNTs) was investigated. The focus of the study was on the electrical properties of single-walled carbon nanotube (SWNT) network devices exposed to proton beams. Field-effect transistors (FETs) of network type were fabricated using SWNTs and were then irradiated by high-energy proton beams of 10–35?MeV with a fluence of 4 ? 10<SUP>10</SUP>–4 ? 10<SUP>12</SUP>?cm<SUP>−2</SUP> that are comparable to the aerospace radiation environment. The electrical properties of both metallic and semiconducting CNT network FET devices underwent no significant change after the high-energy proton irradiation, indicating that the CNT network devices are very tolerant in proton beams. Raman spectra confirm the proton-radiation hardness of CNT network FET devices. The radiation hardness of CNT network FET devices promises therefore the potential usefulness of CNT-based electronics for future space application. </P>