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Kang, Boseok,Park, Namwoo,Lee, Jeonghwi,Min, Honggi,Choi, Hyun Ho,Lee, Hwa Sung,Cho, Kilwon American Chemical Society 2015 Chemistry of materials Vol.27 No.13
<P>This study systematically demonstrates the effects of the grain structure of crystalline self-assembled monolayers (SAMs) on the growth of organic semiconductor thin films on such monolayers, as well as the electrical characteristics of the resulting semiconductor films. The grain structure of the octadecyltrichlorosilane (OTS) monolayers could be tailored by constructing the monolayers at three different temperatures: -30 degrees C (-30 degrees C OTS), -5 degrees C (-5 degrees C OTS), and 20 degrees C (20 degrees C OTS). Among the three layers, -30 degrees C OTS exhibited the largest crystalline grains and longest-range homogeneity of alkyl chain arrays. We found that pentacene films deposited on -30 degrees C OTS monolayers show larger crystalline grains with higher degrees of crystallinity and lateral alignment compared to that of films deposited on -5 degrees C OTS or 20 degrees C OTS monolayers, following the surface characteristics of the underlying OTS monolayers. Furthermore, pentacene field-effect transistors fabricated with 30 degrees C OTS monolayers showed lower charge trap densities and higher field-effect mobility values than devices fabricated using 5 or 20 degrees C OTS monolayers. These results are explained in terms of enhanced quasi-epitaxial growth of pentacene films on OTS monolayers with large grains.</P>
Recent Advances in Organic Transistor Printing Processes
Kang, Boseok,Lee, Wi Hyoung,Cho, Kilwon American Chemical Society 2013 ACS APPLIED MATERIALS & INTERFACES Vol.5 No.7
<P>Recent progress in organic field-effect transistor (OFET) printing processes is reviewed, and a perspective on the future of the field is discussed. The principles underlying the OFET printing techniques are introduced according to two categories: direct write printing and transfer printing. A comprehensive overview of the use of printing techniques in OFET production processes is also provided. Considerations for improving OFET device performance using printing processes are explored. Prior to OFET commercialization, the OFET printing techniques must satisfy several requirements, as discussed here.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2013/aamick.2013.5.issue-7/am302796z/production/images/medium/am-2012-02796z_0014.gif'></P>
Stretchable Polymer Gate Dielectric with Segmented Elastomeric Network for Organic Soft Electronics
Kang, Boseok,Song, Eunjoo,Lee, Seon Baek,Chae, Byeong-Gyu,Ahn, Hyungju,Cho, Kilwon American Chemical Society 2018 Chemistry of materials Vol.30 No.18
<P>Stretchable electronics has emerged as a key technology for human-friendly soft electronic applications. However, the difficulty of preparing stretchable gate dielectrics is a major impediment to the realization of stretchable electronic devices. Here, we present a stretchable polymer gate dielectric for use in stretchable organic thin-film transistors (OTFTs). Our strategy is to form a segmented elastomeric network inside an end-functionalized reactive liquid rubber with a high dielectric constant by using an organosilane cross-linking agent. The developed dielectric layer consists of hard segments of self-organized nanocrystals and soft rubber segments. The nanocrystals distributed in the rubber matrix resist the growth of electrical treeing inside the film and thus significantly increase the dielectric strength and reduce the leakage current density (∼10<SUP>-8</SUP> A cm<SUP>-2</SUP> at 2.0 MV cm<SUP>-1</SUP>). The superior insulating properties are maintained well during tensile stretching with moderate strains ε ≤ 30%. Furthermore, fully stretchable OTFTs based on the developed gate dielectric were demonstrated to stably operate without electrical breakdown under stretching of ε ≤ 34%. These results prove that our method is a promising approach to the development of stretchable polymer gate dielectrics.</P> [FIG OMISSION]</BR>
Kang, Boseok,Kim, Ran,Lee, Seon Baek,Kwon, Soon-Ki,Kim, Yun-Hi,Cho, Kilwon American Chemical Society 2016 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY - Vol.138 No.11
<P>While high-mobility p-type conjugated polymers have been widely reported, high-mobility n-type conjugated polymers are still rare. In the present work, we designed semifluorinated alkyl side chains and introduced them into naphthalene diimide-based polymers (PNDIF-T2 and PNDIF-TVT). We found that the strong self-organization of these side chains induced a high degree of order in the attached polymer backbones by forming a superstructure composed of 'backbone crystals' and 'side-chain crystals'. This phenomenon was shown to greatly enhance the ordering along the backbone direction, and the resulting polymers thus exhibited unipolar n-channel transport in field-effect transistors with remarkably high electron mobility values of up to 6.50 cm(2) V-1 s(-1) and with a high on-off current ratio of 10(5).</P>
Kang, Boseok,Min, Honggi,Seo, Unsuk,Lee, Junghwi,Park, Namwoo,Cho, Kilwon,Lee, Hwa Sung WILEY‐VCH Verlag 2013 ADVANCED MATERIALS Vol.25 No.30
<P><B>A capillary pen drawing technique, developed as a new patterning methodology</B> for the large‐area patterning and fabrication of organic electronics, provides several advantages over conventional approaches: the method is simple and versatile, there are no restrictions on the patterning shapes that could be produced, and the method can be tailored to a variety of substrates.</P>
강보석 ( Kang Boseok ) 부산외국어대학교 비교법연구소 2018 比較法學 Vol.29 No.-
국내체류 북한이탈주민의 수가 3만명을 넘어섰다. 학령기 탈북 청소년의 수도 크게 증가하고 있고, 통일부, 교육부, 여성가족부 등은 이들을 지원하기 위한 여러 가지 교육지원사업을 진행하고 있다. 탈북청소년은 북한출생 탈북청소년과 북한이 아닌 제3국에서 출생한 북한이탈주민 자녀로 구분되는데, 현재 북한이탈주민법은 출생지를 기준으로 북한출생 탈북 청소년에 대한 한국사회 정착 및 지원을 위한 보호와 지원규정을 두고 있다. 그러나 97년 북한이탈주민법 제정이후 2017년 현재 국내 체류 제3국 출생 북한이 탈주민자녀의 수가 북한출생 탈북 청소년보다 많아졌다. 국내 체류 북한이 탈주민의 수가 3만명을 넘어선 지금 북한 출생 탈북 청소년외에 제3국에서 출생한 북한이탈주민 자녀의 교육권 보장 문제가 대두되고 있다. 특히 이들은 북한출생 탈북청소년과 달리 한국어가 능숙하지 못한 경우가 많아 북한출생 탈북 청소년과는 차별화된 교육지원이 필요한 상황이다. 통일부, 교육부 여성가족부 및 민간 차원에서 이들에 대한 교육적 지원이 이루어지고 있다. 그러나 이러한 교육지원정책은 법적 근거 없는 정책적 배려일 뿐 북한이탈주민법의 규정은 제3국 출생 북한이탈주민 자녀의 교육권 보장이 충분히 이루어지고 있지 못한 상황이다. 이러한 법현실을 제대로 보호하지 못하는 상황이다. 따라서 본 연구에서는 국내계속 증가하고 있는 제3국 출생북한이탈주민자녀의 교육권 현황을 살펴보고 문제점과 개선방안을 모색하고자 하였다. This research examines the problematic education situations of children with a background of defection from North Korea(NK) and analyzes education policies and law in order to suggest more effective education assistance for them. The children can be classified into four groups: children born in NK, unaccompanied children born in NK, children born in the 3rd countries such as China, and children born in South Korea. The children share their parents' background as North Korean refugees. and they also have on their own immigrant experiences moving from another country to South Korea. The children’s legal protections are differently applied for the children according to their place of birth. So North Korean Korean Children born in 3rd countries student education should be redefined, which will give a new perspective in Korean. This research is to provide the preparation of North Korean Children born in 3rd countries and support act for North Korean refugees in terms of current legislative system. This study intend to review realistic problems occurring even if they are not defined in the framework of the current support act for North Korean refugees.
Choi, Jong Yong,Kang, Woonggi,Kang, Boseok,Cha, Wonsuk,Son, Seon Kyoung,Yoon, Youngwoon,Kim, Hyunjung,Kang, Youngjong,Ko, Min Jae,Son, Hae Jung,Cho, Kilwon,Cho, Jeong Ho,Kim, BongSoo American Chemical Society 2015 ACS APPLIED MATERIALS & INTERFACES Vol.7 No.10
<P>Bottom-contact bottom-gate organic field-effect transistors (OFETs) are fabricated using a low band gap pDTTDPP-DT polymer as a channel material and single-layer graphene (SLG) or Au source/drain electrodes. The SLG-based ambipolar OFETs significantly outperform the Au-based ambipolar OFETs, and thermal annealing effectively improves the carrier mobilities of the pDTTDPP-DT films. The difference is attributed to the following facts: (i) the thermally annealed pDTTDPP-DT chains on the SLG assume more crystalline features with an edge-on orientation as compared to the polymer chains on the Au, (ii) the morphological features of the thermally annealed pDTTDPP-DT films on the SLG electrodes are closer to the features of those on the gate dielectric layer, and (iii) the SLG electrode provides a flatter, more hydrophobic surface that is favorable for the polymer crystallization than the Au. In addition, the preferred carrier transport in each electrode-based OFET is associated with the HOMO/LUMO alignment relative to the Fermi level of the employed electrode. All of these experimental results consistently explain why the carrier mobilities of the SLG-based OFET are more than 10 times higher than those of the Au-based OTFT. This work demonstrates the strong dependence of ambipolar carrier transport on the source/drain electrode and annealing temperature.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2015/aamick.2015.7.issue-10/acsami.5b00747/production/images/medium/am-2015-00747f_0009.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am5b00747'>ACS Electronic Supporting Info</A></P>