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絹織物의 방추성에 關한 硏究 : Ⅰ.絹紡絲織物을 中心으로 Ⅰ.Wrinkle Recovery behavior of spun-silk fabric
裵道奎,南重熙,金種鎬 한국잠사학회 1986 한국잠사곤충학회지 Vol.28 No.1
This work was to realize the wrinkling behavior of spun silk fabric. The results were obtained through the various conditions such as temperature, wrinkling time, wrinkling load and crease recovery time. The obtained results were summerized as follows: 1. Wrinkle recovery of the silk fabric was decreased with the increase of temperature, humidity and the influence of humidity was superior to the influence of temperature. 2. The change of wrinkle recovery depending on the wrinkle recovery time showed the experimental equation (Y=a÷b ln T). The wrinkle recovery increased with the lapse of wrinkle recovery time but arrived at the equilibrium position about 300 sec. 3. The value "K1" of the silk fabric in the "Voigt model" was inferior as compared with the polyester and Nylon. 4. The change of wrinkle recovery depending on the wrinkling time was decreased with the lapse of wrinkle recovery time but the change of the value "a" could not be fined. 5. The change of wrinkle recovery depending on the wrinkling load was same as above 4.
GABA가 동통자극에 대한 흑질 뉴론의 반응에 미치는 영향
남숙현,이배환 고려대학교 의과대학 1990 고려대 의대 잡지 Vol.27 No.2
The present study was conducted to determine what GABAergic receptor IS involved in substantia nigra(SN) pain modulation mechanism. After the spontaneous activity of SN neurons was recorded, the responses of neurons to noxious peripheral stimulation and to iontophoretically applied GABA, SR95531, baclofen, and naloxone were observed. Results are as follows : 1. GABA inhibited the activities of S N neurons responding to noxious stimulation. 2. SR95531 increased the spontaneous activities of SN neurons and disinhibited the effect of GABA. 3. Baclofen had little effect on the activities SN neurons. 4. Naloxone tended to inhibit neuronal activities but did not correspond to effects of GABAergic drugs. These results suggest that GABAA receptor is involved in SN pain modulation mechanism mediated by GABA and this mechanism is not identical to opiate system.
Electroreduction of oxygen on Pd catalysts supported on Ti-modified carbon
Bae, S.J.,Nahm, K.S.,Kim, P. Elsevier 2012 CURRENT APPLIED PHYSICS Vol.12 No.6
Carbon supports modified with well dispersed anatase TiO<SUB>2</SUB> (C-Ti-X; X (0.25, 0.5, 0.75, and 1.0) represents mass ratio of Ti precursor to carbon) were synthesized with various Ti loadings and used to support Pd catalysts for oxygen reduction. The anatase nanoparticles increased in size with increasing Ti loading. Pd dispersion improved with increasing Ti loading up to the C-Ti-0.75, which resulted in the best catalytic activity. Although the Pd dispersion was lowest on the C-Ti-1.0, it showed better catalytic performance than the catalysts supported on C-Ti-0.25 and C-Ti-0.5. At 0.8V (vs. RHE), the best catalytic activity achieved was respectively 2.7 and 2.7 times the mass and specific activities of Pd supported on un-modified carbon. The interaction between Pd and highly dispersed TiO<SUB>2</SUB> is believed to improve the catalytic activity of Pd supported on TiO<SUB>2</SUB>-modified carbons.
남기석,정석진,장동배 한국화학공학회 1990 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.28 No.5
GaAs(100)을 HF-산화제-H₂O 혼합용액에서 식각시켜 식각반응을 식각용액의 산화환원전위와 반도체의 띠이론을 이용하여 설명하였다. 식각반응속도는 n-GaAs와 p-GaAs에 상관없이 거의 같은 속도를 보였다. 식각용액의 산화환원전위와 GaAs의 원자가띠간의 에너지차가 크면 클수록 식각반응의 활성화에너지는 낮아지며 식각속도는 빨라짐을 보였다. 파장이 632.8㎚인 He/Ne레이저광을 GaAs의 표면에 조사하면서 레이저식각시킨 결과 n-GaAs의 식각속도는 크게 증가하였으나 p-GaAs는 전혀 영향을 받지 않았다. GaAs의 반응표면에 생성되는 전공은 식각반응에 중요한 역할을 하며, 표면전공의 농도가 증가하면 할수록 식각반응속도는 증가함을 보였다. 실험에 사용한 식각용액에서는 거의 이방성식각을 얻을 수 있었다. The etching reaction of GaAs(100) in HF-oxidizing agent-H₂O mixed solutions was explained using the redox potential of etching solution and the band theory of semiconductor. The etch rates were similar for n-type and p-type GaAs. The higher the energy difference between the valence band of GaAs and the redox potential of etching solution was, the lower the activation energy of the etching reaction was and the etch rate of GaAs was rapider. Laser-induced etching of GaAs(100) with 632.8 ㎚ He/Ne laser illumination showed that the etch rate for n-GaAs was dramatically increased while that for p-GaAs was not responsive to laser illumination. The holes formed at the surface of GaAs played an important role in the etching reaction of GaAs. The etch rate increased with the increase of the hole concentration at the surface. The anisotropic etching was obtained by proper use of the etching solutions in the experiment.
Nahm, Minyeop,Kim, Sungdae,Paik, Sang Kyoo,Lee, Mihye,Lee, Seongsoo,Lee, Zang Hee,Kim, Jaesang,Lee, Daekee,Bae, Yong Chul,Lee, Seungbok The Society 2010 The Journal of neuroscience Vol.30 No.24
<P>The bone morphogenetic protein (BMP) ligand Glass bottom boat (Gbb) acts as a retrograde growth signal at the Drosophila neuromuscular junction (NMJ). Endocytic regulation of presynaptic BMP receptors has been proposed to attenuate retrograde BMP signaling. However, it remains unknown whether the Gbb signal is also regulated by postsynaptic mechanisms. Here, we provide evidence that Drosophila Cdc42-interacting protein 4 (dCIP4) functions postsynaptically to inhibit synaptic growth. dCIP4 is localized postsynaptically at NMJs. dcip4 mutations lead to synaptic overgrowth and increased presynaptic phosphorylated mothers against decapentaplegic (Mad) levels, and these defects are rescued by muscle-specific expression of dCIP4. Biochemical and genetic analyses demonstrate that dCIP4 acts downstream of Cdc42 to activate the postsynaptic Wsp-Arp2/3 pathway. We also show that BMP signaling is necessary for synaptic overgrowth in larvae lacking postsynaptic dcip4 or wsp. Finally, dCIP4 and Wsp inhibit Gbb secretion. Thus, we propose that dCIP4 restrains synaptic growth by inhibiting postsynaptic Gbb secretion through the Wsp-Arp2/3 pathway.</P>
Bae, Sung Jong,Yoo, Sung Jong,Lim, Yuntaek,Kim, Sojeong,Lim, Yirang,Choi, Junghun,Nahm, Kee Suk,Hwang, Seung Jun,Lim, Tae-Hoon,Kim, Soo-Kil,Kim, Pil The Royal Society of Chemistry 2012 Journal of materials chemistry Vol.22 No.18
<P>To design Pt-based materials with a hollow structure <I>via</I> a galvanic reaction would be one of the effective ways to prepare electro- catalysts with high activity. The galvanic reaction between Pt ions and metal template is usually conducted under limited conditions, which makes the preparation of Pt hollow nanoparticles laborious. Here, we introduce a one-step and one-pot synthetic approach for the preparation of carbon-supported PtNi alloy hollow nanoparticles with a narrow size distribution. Prepared PtNi alloys were characterized by a nonporous shell consisting of a Pt-enriched surface layer and an inner alloy layer of Pt and Ni. Due to its unique structural advantages, this material showed excellent electrocatalytic performance for oxygen reduction (3.3- and 7.8-fold enhanced mass and specific activities compared to those of a commercial carbon-supported Pt nanoparticle). A possible mechanism for the formation of PtNi hollow structure is suggested.</P> <P>Graphic Abstract</P><P>Carbon-supported PtNi alloy hollow nanoparticles with excellent electrocatalytic performance for oxygen reduction were prepared by a one-step and one-pot synthetic method. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c2jm16827h'> </P>
고 Mn-Cr 강의 조사손상에 미치는 전자선 조사 온도의 영향
배동수,정호신,강창용,남승훈,이해무 대한금속재료학회 2004 대한금속·재료학회지 Vol.42 No.3
The effect of electron-beam irradiation temperature on irradiation damage of 12%Cr-15%Mn austenitic steel for structural material of nuclear and/or fusion reactors from the point of view of the reduced activation was investigated by using the 1,250 keV HVEM and an energy dispersed X-ray analyzer(EDX) in a 200 keV FE-TEM with beam diameter of about 0.5 nm. Void formation was not observed in irradiated specimen. The dislocation loop growth was observed and the density and size of dislocation loop were increased with irradiation dose. Irradiation-induced segregations of Cr and Mn at grain boundary were also observed by electron-beam irradiation condition. The amount of Mn segregation was increased with irradiation temperature, however, segregation phenomenon was disappeared in the case of Cr.