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주민규,유규창,Leanne Atwater 한국인사관리학회 2023 조직과 인사관리연구 Vol.47 No.3
Scholars have contended that paying theoretical attention to leadership development as a construct is necessary to fully understand how people become good leaders. In this study, we attempt to address a call for continuous efforts to integrate social cognitive theory to help fill the void in our understanding of the effectiveness of leadership mentoring designed to foster female protégés’ leadership self-efficacy and motivation to lead. We examined an underlying mechanism through which leadership mentoring affects female protégés’ leadership development (i.e., self-efficacy) and the roles of personality in the relationship between leadership mentoring and motivation to lead. We collected data from nine organizations in South Korea. We found that leadership mentoring was positively related to female protégés’ motivation to lead through strengthened leadership self-efficacy. In addition, female protégés who were higher on openness and conscientiousness obtained more benefits from leadership mentoring than those who were lower. We provide theoretical and practical implications to help break the glass ceiling in South Korea and elsewhere.
Temporal and Spatial Resolution of HF Ocean Radars
Malcolm L. Heron,Daniel P. Atwater 한국해양과학기술원 2013 Ocean science journal Vol.48 No.1
The spatial and temporal resolutions of the two main types of HF radar are compared, with reference to the phasedarray and the crossed-loop direction-finding systems which make up the Australian Coastal Ocean radar Network. Both genres use a swept frequency “chirp” modulation to define the range of a pixel being observed but the method for determining the azimuth direction of the pixel is a strong point of differentiation. The phased-array systems produce independent maps of surface currents in about 1/7 of the time for the crossed-loop systems because of contrasting noise performance of the antennas. The use of beam-forming analysis in the phased-arrays is shown to give spatial resolutions, for vector currents, of about 10 km close to the shore, and 25 km at ranges of 150 km. The corresponding vector current spatial resolutions for the crossed-loop systems are 40 km and 60 km respectively.
Jeon, Seokmin,Kim, Minho,Doak, Peter W.,Atwater, Harry A.,Kim, Hyungjun American Chemical Society 2019 JOURNAL OF PHYSICAL CHEMISTRY C - Vol.123 No.5
<P>The adsorption and decomposition mechanisms for 1-propanethiol on a Ga-rich GaP(001) (2 × 4) surface are investigated at an atomic level using scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy, and density functional theory (DFT) calculations. Using a combination of experimental and theoretical tools, we probe the detailed structures and energetics of a series of reaction intermediates in the thermal decomposition pathway from 130 to 773 K. At 130 K, the propanethiolate adsorbates are observed at the edge gallium sites, with the thiolate-Ga bonding configuration maintained up to 473 K. Further decomposition produces two new surface features, Ga-S-Ga and P-propyl species at 573 K. Finally, S-induced (1 × 1) and (2 × 1) reconstructions are observed at 673-773 K, which are reportedly associated with arrays of surface Ga-S-Ga bonds and subsurface diffusion of S. To understand the observed site-selectivity on the hydrogen dissociation of the thiol molecule at 130 K, the two most likely dissociation pathways (Ga-P vs Ga-Ga dimer sites) are investigated using DFT Gibbs energy calculations. While the theory predicts the kinetic advantage for the dissociation reaction occurring on the Ga-P dimer (Lewis acid-base combination), we only observed dissociation products on the Ga-Ga dimer (Lewis acid). The DFT calculations clarify that the reversible thiolate diffusion along the Ga dimer row prevents recombinative desorption, which is probable on the Ga-P dimer. Together with experimental and theoretical results, we suggest a thermal decomposition mechanism for the thiol molecule with atomic-level structural details.</P> [FIG OMISSION]</BR>
Electronically Tunable Perfect Absorption in Graphene
Kim, Seyoon,Jang, Min Seok,Brar, Victor W.,Mauser, Kelly W.,Kim, Laura,Atwater, Harry A. American Chemical Society 2018 NANO LETTERS Vol.18 No.2
<P>The demand for dynamically tunable light modulation in flat optics applications has grown in recent years. Graphene nanostructures have been extensively studied as means of creating large effective index tunability, motivated by theoretical predictions of the potential for unity absorption in resonantly excited graphene nanostructures. However, the poor radiative coupling to graphene plasmonic nanoresonators and low graphene carrier mobilities from imperfections in processed graphene samples have led to low modulation depths in experimental attempts at creating tunable absorption in graphene devices. Here we demonstrate electronically tunable perfect absorption in graphene, covering less than 10% of the surface area, by incorporating multiscale nanophotonic structures composed of a low-permittivity substrate and subwavelength noble metal plasmonic antennas to enhance the radiative coupling to deep subwavelength graphene nanoresonators. To design the structures, we devised a graphical method based on effective surface admittance, elucidating the origin of perfect absorption arising from critical coupling between radiation and graphene plasmonic modes. Experimental measurements reveal 96.9% absorption in the graphene plasmonic nanostructure at 1389 cm(-1), with an on/off modulation efficiency of 95.9% in reflection.</P>
Hybrid surface-phonon-plasmon polariton modes in graphene/monolayer h-BN heterostructures.
Brar, Victor W,Jang, Min Seok,Sherrott, Michelle,Kim, Seyoon,Lopez, Josue J,Kim, Laura B,Choi, Mansoo,Atwater, Harry American Chemical Society 2014 NANO LETTERS Vol.14 No.7
<P>Infrared transmission measurements reveal the hybridization of graphene plasmons and the phonons in a monolayer hexagonal boron nitride (h-BN) sheet. Frequency-wavevector dispersion relations of the electromagnetically coupled graphene plasmon/h-BN phonon modes are derived from measurement of nanoresonators with widths varying from 30 to 300 nm. It is shown that the graphene plasmon mode is split into two distinct optical modes that display an anticrossing behavior near the energy of the h-BN optical phonon at 1370 cm(-1). We explain this behavior as a classical electromagnetic strong-coupling with the highly confined near fields of the graphene plasmons allowing for hybridization with the phonons of the atomically thin h-BN layer to create two clearly separated new surface-phonon-plasmon-polariton (SPPP) modes.</P>
Jeon, Seokmin,Bosco, Jeffrey P.,Wilson, Samantha S.,Rozeveld, Steve J.,Kim, Hyungjun,Atwater, Harry A. American Chemical Society 2014 The Journal of Physical Chemistry Part C Vol.118 No.24
<P>The growth of epitaxial Zn<SUB>3</SUB>P<SUB>2</SUB> films on III–V substrates unlocks a promising pathway toward high-efficiency, earth-abundant photovoltaic devices fabricated on reusable, single-crystal templates. The detailed chemical, structural, and electronic properties of the surface and interface of pseudomorphic Zn<SUB>3</SUB>P<SUB>2</SUB> epilayers grown on GaAs(001) were investigated using scanning tunneling microscopy/spectroscopy and high-resolution X-ray photoelectron spectroscopy. Two interesting features of the growth process were observed: (1) vapor-phase P<SUB>4</SUB> first reacts with the Ga-rich GaAs surface to form an interfacial GaP layer with a thickness of several monolayers, and (2) a P-rich amorphous overlayer is present during the entire film growth process, beneath which a highly ordered Zn<SUB>3</SUB>P<SUB>2</SUB> crystalline phase is precipitated. These features were corroborated by transmission electron micrographs of the Zn<SUB>3</SUB>P<SUB>2</SUB>/GaAs interface as well as density functional theory calculations of P reactions with the GaAs surface. Finally, the valence-band offset between the crystalline Zn<SUB>3</SUB>P<SUB>2</SUB> epilayer and the GaAs substrate was determined to be Δ<I>E</I><SUB>V</SUB> = 1.0 ± 0.1 eV, indicating the formation of a hole-depletion layer at the substrate surface which may inhibit formation of an ohmic contact.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2014/jpccck.2014.118.issue-24/jp4127804/production/images/medium/jp-2013-127804_0010.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/jp4127804'>ACS Electronic Supporting Info</A></P>