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Dicle Altindal,Eylem Ayhan Alkan,Metin Calisir 대한치주과학회 2023 Journal of Periodontal & Implant Science Vol.53 No.5
Purpose: Peri-implantitis (PI) is an inflammatory condition associated with the destruction of bone tissue around a dental implant, and diode lasers can be used to treat this disease. In this study, we aimed to evaluate the effectiveness of a 940-nm diode laser for the nonsurgical treatment of PI. Methods: Twenty patients (8 women and 12 men) were enrolled in a split-mouth randomized controlled study. In the control group (CG), mechanical debridement with titanium curettes accompanied by airflow was performed around the implants. The test group (TG) was treated similarly, but with the use of a diode laser. Clinical measurements (plaque index, gingival index [GI], probing pocket depth [PPD], bleeding on probing [BOP], clinical attachment level, and interleukin-1β [IL-1β] in the peri-implant crevicular fluid) were evaluated and recorded at baseline and 3 months. IL-1β levels were determined using the enzyme-linked immunosorbent assay method. Results: The symptoms were alleviated in both groups at 3 months as assessed through clinical measurements. GI, BOP, and PPD were significantly lower in the TG than in the CG (P<0.05). The IL-1β level increased post-treatment in both groups, but this increase was only statistically significant (P<0.05) in the CG. Conclusions: The diode laser enabled improvements in clinical parameters in the periimplant tissue. However, it did not reduce IL-1β levels after treatment. Further studies about the use of diode lasers in the treatment of PI will be necessary to evaluate the effects of diode lasers in PI treatment.
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Ibrahim Yucedag,Ahmet Kaya,Semsettin Altindal,Ibrahim Uslu 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.12
Both the electrical and the dielectric properties of the Al/Co-doped polyvinyl alcohol/p-Simetal-polymer-semiconductor (MPS) structure have been studied using temperature-dependentadmittance-voltage (C/G-V) measurements at temperatures below room temperature at 300 kHz. The C-V plot indicates two peaks for each temperature corresponding to inversion and accumulationregions, respectively. The first peak was attributed to a particular distribution of interfacetraps (Dit), and the second was attributed to the series resistance (Rs) and interfacial polymerlayer. G/!-V plots show almost U-shape behavior for all temperatures and a crossing at almost 3V. Such behavior of the G/!-V plots may be attributed to the lack of free charge at low temperatures. After this intersection point, while the value of the capacitance (C) starts decreasing, theG/! continues to increase. The temperature-dependent real and imaginary parts of the dielectricconstant ("0, "00) and of the electric modulus (M0, M00), as well as the ac electrical conductivity(ac), of structure were obtained using C and G data before and after the intersection point (at2 and 6 V), respectively. Experimental results show that the "0, "00, loss tangent (tan), ac, M0,and M00 values were strong functions of the temperature and the applied bias voltage. In addition,G/!-T and "00-T plots show two different behaviors, one before and the other after the intersectionpoint.
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