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RESURF LDMOSFET with a trench for SOI power integrated circuits
Son, Won-So,Sohn, Young-Ho,Choi, Sie-young Elsevier 2004 Microelectronics Journal Vol.35 No.5
<P><B>Abstract</B></P><P>A new structure of RESURF LDMOSFET is proposed, based on silicon-on-insulator, to improve the characteristics of the breakdown voltage and the specific on-resistance, where a trench is applied under the gate in the drift region. A trench is used to reduce the electric field under the gate when the concentration of the drift region is high, thereby increasing the breakdown voltage and reducing the specific on-resistance. Detailed numerical simulations demonstrate the characteristics of this device and indicate an enhancement on the performance of the breakdown voltage and the specific on-resistance in comparison with an optimal conventional device with LOCOS under the gate.</P>
A New Structure for a High-Voltage SOI LDMOSFET for a PDP Scan Driver IC
Won-So Son,Sie-young Choi 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.1
We proposed a new structure with a trench under the gate in the drift region. Since the thick trench oxide can stand higher electric elds, we were able to improve the breakdown voltage and specic on-resistance at the same time. Also, the drift dose in the drift region of the proposed device with a metal eld-plate was higher than that of the conventional device; thereby, the specic on-resistance was reduced. The breakdown voltages of the n- and p-LDMOSFETs were 340 V and their specic on-resistances were 15.1 m cm2 and 41.3 m cm2, respectively.