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In order to understand the difference in SiC deposition between the CH3SiCl3-H2 and C3H8-SiCl4-H2 systems, we calculate the phase stability among B-SiC, graphite and silicon. We constructed the phase-diagram of B-SiC over graphite and silicon via computational thermodynamic calculation considering pressure (P), temperature (T) and gas composition (C) as variables. Both P-T-C diagrams showed a very steep phase boundary between the SiC+C and SiC region perpendicular to the H/Si axis, and also showed an SiC+Si region with a H/Si value of up to 6700 in the C3H8-SiCl4-H2, and 5000 in the CH3SiCl3-H2 system, This difference in phase boundaries is explained by the ratio of Cl to Si, which is 4 for the C3H8-SiCl4-H2 system and 3 for the C3H8-SiCl4-H2 system. Because the C/Si ratio is fixed at 1 in the CH3SiCl3-H2 system while it can be variable in the C3H8-SiCl4-H2 system, the functionally graded material is applicable for better mechanical bonding during SiC coating on graphite substrate in the C3H8-SiCl4-H2 system.
In order to utilize silicon carbide (SiC) as an inner part of fluidized bed reactor (FBR) for manufacturing poly-silicon, we have carried out the thermodynamic calculation on the overall reactions including poly-silicon synthesis and compatibility of SiC with FBR process. The resources of silicon included SiH₄(MS), SiHCl₃(TCS) and SiCl₄(STC) and the thermodynamic yield of the FBR with MS, TCS and STC were compared each other with variable range of temperature, pressure and hydrogen to silicon ratio. The silicon yield of MS, TCS and STC were 100%, 28% and 4%, respectively, throughout the conventional FBR conditions. Silicon carbide having high hardness and strength showed strong resistance to granule collisions during the FBR process using a lab-scale reactor. And it also showed quite good compatibility with the typical FBR processes of MS and TCS resources.
Al-doped ZnO thin films were deposited on glass substrates at room temperature by ion-beam-assisted molecular beam epitaxy (MBE) deposition. The crystallinity, microstructure, surface roughness, and electrical, optical and mechanical prosperities of thin films were investigated as a function of the deposition parameter and the ion energy. The microstructure of the Al-doped ZnO crystalline films on amorphous glass substrates was closely related to oxygen ion bombardment on the growing surface. The effects on the film may be divided into two categories: 1) the enhancement of atom mobility at low energetic ion bombardment and 2) the surface damage by radiation damage at high energetic ion bombardment. A large sized grain structure was obtained in the films deposited at 300 eV. At a high energy ion bombardment of 600eV, however, only a smaller grain structure with high hardness was observed. The electrical properties of the deposited films were significantly related to the change of microstructure and crystallinity. The Al-doped ZnO films with a large size grain structure have better electrical properties than those with a smaller grain structure because the grain boundary scattering decreased in the large size structure compared with the small size grains. The optical photoluminescence of Al-doped ZnO thin films was dependent on the grain size. And then the dye-sensitized solar cell (DSSC) fabricated on the AZO film grown at ion beam energy 300eV condition, it exhibits superior conversion efficiency than the other condition sample. Therefore, transparent conductive glass applying in DSSCs must have a low sheet resistance, a high transmittance in the ultraviolet-visible-infrared region and an excellent surface microstructure.
Recently, the size of Shock Absorber and air spring is enlarged to improve ride quality. Consequently, a location of front Cab mounting system is changed from under frame to front of dash board panel. In this paper, The goal is to improve strength and stiffness according to change of load point. For the optimization of design parameters in large-sized truck Cab system are used sensitivity analysis and Taguchi method which is one of the robust design methods. In order to obtain the best combination of each control factor, the dynamic and the norminal s-best type characteristic parameter method are used for the strength and stiffness output response. In this paper, eight control factors which are determinated according to sensitivity analysis are used for analysis; one with two levels and seven with three level combinations comprising the design of the L₁?(2¹X3?) orthogonal array. With this optimal design, The result of torsional test shows that strength is improved by 15% and the static stiffness increased by 30%.
Abstract: Transparent and conductive Indium Tin Oxide (ITO) thin films were prepared on glass substrates at room temperature (RT) by a RF magnetron sputtering method. The ITO films sputtered at room temperature had an amorphous structure and uniform surface morphology with low planner density. We report the influence of rapid thermal annealing (RTA) treatment on the microstructure, optical and electrical properties of the ITO thin films. Rapid thermal annealing (RTA) was carried out for 2 min, 4 min, 5 min, 8 min and 10 min at 500 ℃ in 98%N2 + 2%H2 ambient gas. This study provides data about the microstructure and optical properties of ITO thin films with thicknesses of around 100 nm. The experimental results showed that the post growth RTA temperature has a significant effect on the properties of ITO thin films. The preferred orientation along the (222) plane, and the average grain size, measured from TEM micrographs, ranged from 5 to 30 nm. The average optical transmittance in a wavelength range of 200-800 nm increased from 74% to 88% after rapid thermal annealing at 500 ℃, where the highest value of the figure of merit was obtained. The resistivity decreased by 500 ℃ at 5 min, which was the annealing temperature, and after that the resistivity increased. The major factor of the resistivity change was the change of the carrier concentration. In addition to the increase in carrier concentration, RTA at 500 ℃ at 5 min caused the band gap energy of the ITO thin films to rise linearly.