급속 열처리 온도에 따른 자발 형성된 InAs 양자점의 구조 및 광학 특성

조신호,Cho, Shin-Ho 한국재료학회 2006 한국재료학회지 Vol.16 No.3

We present the effects of rapid thermal annealing (RTA) temperature on the structural and optical properties of self-assembled InAs quantum dot (QD) structures grown on GaAs substrates by molecular beam epitaxy (MBE). The photoluminescence (PL) measurements are performed in a closed-cycle refrigerator as a function of temperature for the unannealed and annealed samples. RTA at higher temperature results in the increase in island size, the corresponding decrease in the density of islands, and the redshift in the PL emission from the islands. The temperature dependence of the PL peak energy for the InAs QDs is well expressed by the Varshni equation. The thermal quenching activation energies for the samples unannealed and annealed at $600^{\circ}C$ are found to be $25{\pm}5meV$ and $47{\pm}5$ meV, respectively.

CaWO₄:Eu³⁺ 형광체의 합성과 발광 특성

조신호,조선욱,Cho, Shin-Ho,Cho, Seon-Woog 한국재료학회 2012 한국재료학회지 Vol.22 No.5

Red phosphors $Ca_{1-1.5x}WO_4:{Eu_x}^{3+}$ were synthesized with different concentrations of $Eu^{3+}$ ions by using a solid-state reaction method. The crystal structure of the red phosphors was found to be a tetragonal system. X-ray diffraction (XRD) results showed the (112) main diffraction peak centered at $2{\theta}=28.71^{\circ}$, and the size of crystalline particles exhibited an overall decreasing tendency according to the concentration of $Eu^{3+}$ ions. The excitation spectra of all the phosphors were composed of a broad band centered at 275 nm in the range of 230-310 nm due to $O^{2-}{\rightarrow}W^{6+}$ and a narrow band having a peak at 307 nm caused by $O^{2-}{\rightarrow}Eu^{3+}$. Also, the excitation spectrum presents several strong lines in the range of 305-420 nm, which are assigned to the 4f-4f transitions of the $Eu^{3+}$ ion. In the case of the emission spectrum, all the phosphor powders, irrespective of $Eu^{3+}$ ion concentration, indicated an orange emission peak at 594 nm and a strong red emission spectrum centered at 615 nm, with two weak lines at 648 and 700 nm. The highest red emission intensity occurred at x = 0.10 mol of Eu3+ ion concentration with an asymmetry ratio of 12.5. Especially, the presence of $Eu^{3+}$ in the $Ca_{1-1.5x}WO_4:{Eu_x}^{3+}$ shows very effective use of excitation energy in the range of 305-420 nm, and finally yields a strong emission of red light.

라디오파 마그네트론 스퍼터링으로 증착된 AZO 박막의 특성에 대한 급속 열처리 효과

조신호,Cho, Shin-Ho 한국진공학회 2009 Applied Science and Convergence Technology Vol.18 No.5

라디오파 마그네트론 스퍼터링 방법을 사용하여 사파이어 기판 위에 Al 도핑된 ZnO (AZO) 박막을 성장시킨 후에 온도 범위 $600-900^{\circ}C$에서 급속 열처리를 수행하였다. 박막의 결정 구조와 표면 형상은 각각 X-선 회절법과 주사전자현미경으로 조사하였다. 급속 열처리 온도가 증가함에 따라 박막의 결정성은 향상되었고, 평균 50 nm의 크기를 갖는 육각형 형태의 결정 입자가 관측되었다. 증착된 모든 박막은 파장 영역 400-1100 nm에서 92%의 평균 투과율을 나타내었다. 열처리 온도가 증가함에 따라 박막의 밴드갭 에너지는 감소하였고, 광여기 발광 신호의 경우에 자외선 발광 신호의 세기가 감소하면서 400 nm에 중심을 둔 보라색 발광 신호가 주된 피크를 형성하였다. 박막의 전기적 특성은 열처리 온도에 현저한 의존성을 보였다. Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire substrate by using radio-frequency magnetron sputtering and were performed in the temperature range of $600-900^{\circ}C$ by rapid thermal annealing (RTA). The crystallographic structure and the surface morphology were investigated by using X-ray diffraction and scanning electron microscopy, respectively. The crystallinity of the films was improved with increasing the annealing temperature and the average size of crystalline grains was found to be 50 nm. All the thin films showed an average transmittance of 92% in the wavelength range of 400-1100 nm. As the annealing temperature was increased, the bandgap energy was decreased and the violet photoluminescence (PL) signal at 400 nm replaced the ultraviolet PL signal. The electrical properties of the thin films showed a significant dependence on the annealing temperature.

O₂/Ar 혼합 유량비를 변수로 갖는 라디오파 마그네트론 스퍼터링으로 성장된 ZnO 박막의 특성

조신호,Cho, Shin-Ho 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.11

The structural, optical, and electrical properties of ZnO thin films grown on glass by radio-frequency (rf) magnetron sputtering were investigated. The mixture flow ratio of $O_2$ to Ar, which was operated with sputtering gas, was chosen as a parameter for growing high-qualify ZnO thin films. The structural properties and surface morphologies of the thin films were characterized by the X-ray diffraction and the atomic force microscope, respectively. As for the optical properties of the films, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of ZnO thin films were calculated from the measured data. The crystallinity of the films was improved and the bandgap energy was increased from 3.08 eV to 3.23 eV as the oxygen flow ratio was increased from 0 % to 50 %. Furthermore, The ultraviolet and violet luminescences were observed by using photoluminescence spectroscopy. The hall mobility was decreased with the increase of oxygen flow ratio.

증착 온도가 RF 반응성 마그네트론 스퍼터링법으로 성장된 InN 박막의 특성에 미치는 영향

조신호,Cho, Shin-Ho 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.10

Indium nitride thin films were deposited by the radio-frequency reactive magnetron sputtering method. The indium target was sputtered by the mixture flow ratio of $N_2$ to Ar, 9:1. The effects of growth temperature on the structural, optical, and electrical properties of the films were investigated. With increasing the growth temperature, the crystallinity of the films was improved, and the crystalline size was increased. The energy bandgap for the film grown at $25^{\circ}C$ was 3.63 eV, and the bandgap showed an increasing tendency on the growth temperature. The carrier concentration, Hall mobility and electrical resistivity of the films depended significantly on the growth temperature and the maximum Hall mobility of $32.3\;cm^2$/Vsec was observed for the film grown at $400^{\circ}C$.

Eu³⁺ 농도에 따른 적색 형광체 Gd_1-xVO₄:Eu_x³⁺의 형광 특성

조신호,조선욱,Cho, Shin-Ho,Cho, Seon-Woog 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.3

$Gd_{1-x}VO_4:{Eu_x}^{3+}$ red phosphors were synthesized with changing the concentration of $Eu^{3+}$ ion by using a solid-state reaction method. The crystal structure, surface morphology, and photoluminescence and photoluminescence excitation properties of the red phosphors were measured by using X-ray diffractometer, field emission-scanning electron microscopy, and florescence spectrometer, respectively. The XRD results showed that the main peak of all the phosphor powders occurs at (200) plane. As for the photoluminescence properties, the maximum excitation spectrum occurred at 306 nm due to the charge transfer band from ${VO_4}^{3-}$ to $Eu^{3+}$ ions and the maximum emission spectrum was the red luminescence peaking at 619 nm when the concentration of $Eu^{3+}$ ion was 0.10 mol.

고상 반응법으로 제조한 녹색 형광체 Y_1-xBO₃:Tb_x³⁺의 형광 특성

조신호,Cho, Shin-Ho 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.8

[ $Y_{1-x}BO_3:Tb_x^{3+}$ ]ceramic phosphors were synthesized with changing the concentration of $Tb^{3+}$ at a sintering temperature of $1,100^{\circ}C$ and a reduction temperature of $950^{\circ}C$ by using a solid-state reaction method. The crystal structure, surface morphology, and photoluminescence properties of the phosphors were investigated as a function of $Tb^{3+}$ ion concentration by using XRD (x-ray diffractometer), scanning electron microscopy, and photoluminescence spectrophotometry, respectively. The XRD results showed that the main peak of the phosphor powders occurs at (101) plane. As for the photoluminescence properties, the excitation spectra showed the broad band centered at 306 nm and the emission intensity of the spectra peaked at 543 nm indicated a significant decrease as the concentration of $Tb^{3+}$ ion is increased.

광학 펄스 에너지와 온도 변화에 의한 고온 초전도체의 공명 진동수 변조

조신호,Cho, Shin-Ho 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.11

The resonant frequency modulation of $YBa_2Cu_3O_{7-x}$ meander lines has been investigated as functions of optical pulse energy and temperature by using a network analyzer. The frequency-domain measurements are performed by controlling both the resonant frequency and the frequency width. The meander lines, configured in a microstrip geometry, are illuminated by optical pulses from an actively mode-locked Nd:YAG laser. The variation of the resonant frequency shows a quadratic dependence on the reduced optical pulse energy $P/P_c$, where $P_c$ is defined as the critical optical pulse energy at which resonance signal has disappeared. As for the dependence on temperature, the results are in good agreement with the previously reported data.

Sm³⁺ 도핑된 GdVO₄ 형광체의 제조와 발광 특성

조신호,조선욱,Cho, Shin-Ho,Cho, Seon-Woog 한국진공학회 2012 Applied Science and Convergence Technology Vol.21 No.2

고상 반응법을 사용하여 $Sm^{3+}$ 이온의 함량비를 변화시키면서 $Gd_{1-x}VO_4:{Eu_x}^{3+}$ 형광체 분말을 합성하였다. 모든 형광체 시료의 결정 구조는 $24.76^{\circ}$에 중심을 갖는 (200) 주 회절 피크로 구성되는 정방정계이었으며, 결정 입자의 형상은 $Sm^{3+}$ 이온의 함량비가 0.05 mol일 때 구형에 근접하고 균일한 크기 분포를 나타내었다. 발광 특성의 경우에, $Sm^{3+}$ 이온의 함량비에 관계없이 모든 형광체 분말은 파장 565, 603, 645 nm에 피크를 갖는 각각 황색, 주황색, 적색 형광을 보였다. $Sm^{3+}$ 이온의 함량비가 증가함에 따라 흡수 스펙트럼의 세기는 감소하는 경향을 나타내었으며, $Sm^{3+}$ 이온의 함량비가 0.05 mol일 때 최대 흡수와 발광 스펙트럼이 관측되었고, 대칭비의 값은 1.19이었다. $Gd_{1-x}VO_4:{Eu_x}^{3+}$ phosphor powders were synthesized with changing the concentration of $Sm^{3+}$ ion by using a solid-state reaction method. The crystal structures of all the phosphors were found to be a tetragonal system, composed of (200) diffraction peak centered at $24.76^{\circ}$, and the morphology of grains approached the spherical form with homeogenous size distribution when the concentration of $Sm^{3+}$ ion was 0.05 mol. As for the photoluminescence properties, all of the phosphor powders, irrespective of $Sm^{3+}$ ion concentration, indicated the yellow, orange, and red emission peaked at 565, 603, and 645 nm respectively. As the concentration of $Sm^{3+}$ ion increases, the intensity of excitation spectrum showed a decreasing tendency on the increase of Sm3+ ion concentration. The maximum excitation and emission spectra were observed and the symmetry ratio was 1.19 at 0.05 mol of $Sm^{3+}$ ion.

적색 형광체 Gd_1-xAl₃(BO₃)₄:Eu_x³⁺의 합성과 발광 특성

조신호,조선욱,Cho, Shin-Ho,Cho, Seon-Woog 한국재료학회 2012 한국재료학회지 Vol.22 No.3

Red phosphors of $Gd_{1-x}Al_3(BO_3)_4:{Eu_x}^{3+}$ were synthesized by using the solid-state reaction method. The phase structure and morphology of the phosphors were measured using X-ray diffraction (XRD) and field emission-scanning electron microscopy (FE-SEM), respectively. The optical properties of $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors with concentrations of $Eu^{3+}$ ions of 0, 0.05, 0.10, 0.15, and 0.20 mol were investigated at room temperature. The crystals were hexagonal with a rhombohedral lattice. The excitation spectra of all the phosphors, irrespective of the $Eu^{3+}$ concentrations, were composed of a broad band centered at 265 nm and a narrow band having peak at 274 nm. As for the emission spectra, the peak wavelength was 613 nm under a 274 nm ultraviolet excitation. The intensity ratio of the red emission transition ($^5D_0{\rightarrow}^7F_2$) to orange ($^5D_0{\rightarrow}^7F_1$) shows that the $Eu^{3+}$ ions occupy sites of no inversion symmetry in the host. In conclusion, the optimum doping concentration of $Eu^{3+}$ ions for preparing $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors was found to be 0.15 mol.