http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
정태훈,임진모,이덕래,Jeong, Tae-Hun,Im, Jin-Mo,Lee, Deok-Rae 한국섬유공학회 1995 한국섬유공학회지 Vol.32 No.12
This study were made on the air permeability of weft knitted fabrics using cotton yarn as raw materials. It is general assumption that the air permeability as weft knitted fabrics are resulted from the sum of two parts. The one is a nozzle part such as space among yarns in cotton knitted fabrics, and the other is a capillary part such as space among fibers in knitted yarn. Based on this assumption we had studied on the three basic weft knitted structures as plaint 1$\times$1 rib and interlock stitches in connection with air permeabilty. And we had made the regression equations between parameter A(nozzle part), B(capillary part) and air-permeability of cotton knitted fabrics by means of stepwise regression analysis. From the analysis, the f311owing results were obtained: Vupia, n) : 7.36639+203.03799A+371.05482B, Vunb)=26.27621+ 256.03855A+281.64791B, Vu, n‥‥1~k)= 56.51290+56.78075A+54.97715B, Vu, o, at)=28.807)6+214.90318A+71.51714B.
국제학술회의 참관기 - 3차 아태 플라즈마 이론 학술대회
정태훈,Jeong, Tae-Hun 한국과학기술단체총연합회 1999 과학과 기술 Vol.32 No.1
지난해 9월 21일부터 25일까지 중국 베이징에서 열린 제3차 아시아 태평양 플라즈마 이론 학술대회는 15개국에서 154명의 학자가 참여했고 우리나라에서도 10여명의 학자들이 참가하여 연구논문을 발표했다. 이 대회에서 한국의 홍봉근(원자력연구소)박사와 김진용(기초과학자원연구소)박사는 96년 개발 착수한 초전도 토카막장치(KSTAR)의 안정성과 동작모드에 대한 연구를 발표했다.
액상공정으로 제작된 ZrInZnO 박막 트랜지스터의 전기적 특성에 관한 연구
정태훈,김시준,윤두현,정웅희,김동림,임현수,김현재,Jeong, Tae-Hoon,Kim, Si-Joon,Yoon, Doo-Hyun,Jeong, Woong-Hee,Kim, Dong-Lim,Lim, Hyun-Soo,Kim, Hyun-Jae 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.6
Soution-processed ZrInZnO (ZIZO) thin-film transistors (TFTs) with varying Zr content were fabricated. The ZIZO TFT (Zr=20 at. %/Zn) has an optimal performance with the saturation field effect mobility of 0.77 $cm^2/Vs$, the threshold voltage (Vth) of 2.1 V, the on/off ratio of $4.95{\times}10^6$, and subthreshold swing (S.S) of 0.73 V/decade. Using this optimized ZIZO TFT, the positive and negative gate bias stress according to annealing temperature was also investigated. While the Vth shifts dramatically after 1,000 s of both gate bias stresses, variations in the S.S are negligible. It suggests that electrons or holes are tem porarily trapped in the gate insulator, the semiconductor, or the interface between both layers.