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정일현 ( Jung Il Hyun ) 한국공업화학회 2003 공업화학 Vol.14 No.4
본 연구에서는 RF 플라즈마 공정과 열처리 공정에 의해 합성된 티타니아 분말의 특성을 분석하였다. 플라즈마에 의해 합성된 분말은 나노 입자를 형성한 후 서로 뭉치면서 만들어졌다. 1차 분말의 유기물질 함유량이 0.5~3%이었다. 열처리 온도 700℃에서 RF-출력이 400 watt 이상으로 증가할수록 아나타제의 비율이 증가하였다. 열처리 온도가 증가할수록 결정의 크기는 증가하였으며, 분말의 결정 크기는 약 20~60 nm이었다. In this study, an analysis was made on the characteristics of titania powders synthesized by RF plasma process and the annealing process. In the plasma process, titania powders were synthesized by aggregation of initially formed nano-particles. The titania powders appeared to be amorphous, and the purity of the amorphous titania powder improved considerably compared to the powder from existing processes. The amount of organic materials contained in the powder was approximately 0.5 ~3% in weight. The ratio of the anatase phase in the powder was increased in accordance with the increase of RF-power over 400 watt under the constant annealing temperature of 700℃. The crystallite size ranged about 20 to 68 nm and it increased when the annealing temperature increased.
RF 마그네트론 스퍼트링에 의한 Ga 와 Ge가 도핑된 ZnO 박막 특성의 온도효과
정일현,Jung, Il-Hyun 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.7
The ZnO thin films doped with Ga and Ge (GZO:Ge) were prepared on glass substrate using RF sputtering system. Structural, morphological and optical properties of the films deposited in different temperatures were studied. Proportion of the element of using target was 97 wt% ZnO, 2.5 wt% Ga and 0.5 wt% Ge with 99.99% highly purity. Structural properties of the samples deposited in different temperatures with 200 w RF power were investigated by field emission scanning electron microscopy, FE-SEM images and x-ray diffraction XRD analysis. Atomic force microscopy, AFM images were able to show the grain scales and surface roughness of each film rather clearly than SEM images. it was showed that increasing temperature have better surface smoothness by FE-SEM and AFM images. Transmittance study using UV-Vis spectrometer showed that all the samples have highly transparent in visible region (300~800 nm). In addition, it can be able to calculate bandgap energy from absorbance data obtained with transmittance. The hall resistivity, mobility, and optical band gap energy are influenced by the temperature.
RF magnetron sputtering으로 생성한 Ga,Ge와 Ga이 도핑된 ZnO 박막의 특성
정일현,김유진,박정윤,이루다,Jung, Il-Hyun,Kim, Yu-Jin,Park, Jung-Yoon,Lee, Ru-Da 한국반도체디스플레이기술학회 2010 반도체디스플레이기술학회지 Vol.9 No.3
The ZnO thin films doped with Ga(GZO) and both Ga and Ge(GZO:Ge) were deposited on glass substrate by using RF sputtering system respectively. Structural, morphological and optical properties of the films deposited in the same condition were investigated. Structural properties of the films were investigated by Field Emission Scanning Electron Microscopy, FE-SEM images and X-ray diffraction, XRD analysis. These studies showed shape of films' surface and direction of film growth respectively. It's showed that all films were deposited by vertical orientation strongly. It can be confirmed that all dopants of targets were included in deposited films by results of EDX analysis. UV-Vis spectrometer results showed that all samples had highly transparent characteristics in visible region and have similar 3.28~3.31 eV band gap. It was found that existence of all dopants by EDX analysis. Morphology and roughness of surface of each film were clearly shown by Atomic Force Microscopy, AFM images. It was found in this research that film doped with Ge more dense and stable with hardly any difference in gap energy compared to ZnO films.
탄소 촉매에 의하여 성장된 별-모양 ZnO 나노 구조물의 합성과 광학적 특성
정일현,채명식,이의암,Jung, Il-Hyun,Chae, Myung-Sic,Lee, Ui-Am 한국반도체디스플레이기술학회 2010 반도체디스플레이기술학회지 Vol.9 No.2
Star-like ZnO nanostructures were grown on SI(100) substrates with carbon(C) catalyst by employing vapor-solid(VS) mechanism. The morphologies and structure of ZnO nanostructures were investigated by Field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and Raman spectrum, Photoluminescence spectrum. The results demonstrated that the as-synthesized products consisted of star-like ZnO nanostructure with hexagonal wurtzite phase. Nanostructures grown at 1100 were mainly star-like in structure with diameters of 500 nm. The legs of the star-like nanostructures were preferentially grown up along the [0001] direction. A vapor.solid (VS) growth mechanism was proposed to explain the formation of the star-like structures. Photoluminescence spectrum exhibited a narrow emission band peak around 380 nm and a broad one around 491 nm. Raman spectrum of the ZnO nanostructures showed oxygen defects in ZnO nanostructures due to the existence of Ar gas during the growth process, leading to the dominant green band peak in the PL spectrum.
저온 산화공정에 의해 낮은 D<sub>it</sub>를 갖는 실리콘 산화막의 제조
전법주,정일현,Jeon, Bup-Ju,Jung, Il-Hyun 한국공업화학회 1998 공업화학 Vol.9 No.7
ECR 산소플라즈마를 이용하여 저온 확산법에 의해 서로 다른 종류의 기판에 마이크로파 출력, 기판의 위치 등을 실험변수로 실리콘 산화막을 제조하고, 열처리 전 후 물리 화학적 특성을 분석하여 Si/O 의 조성비, 산화막 표면의 morphology와 전기적 특성과의 관계를 살펴보았다. 마이크로파 출력이 높은 영역에서, 산화속도는 증가하지만 식각으로 인하여 표면조도가 증가하였다. 따라서 막내에 결함이 증가하고 기판자체에 걸리는 DC bias의 증가로 기상에 존재하는 산소 양이온이 다량 함유되어 산화막의 질이 저하되었다. 기판의 종류에 따라 기상에 존재하는 산소 양이온의 함량은 Si(100) <Si(111) < poly Si 순서로 나타났다. 열처리함으로써 $Si/SiO_2$계면에 존재하는 결함들은 줄일 수 있으나, 고정전하와 계면포획전하 밀도는 열처리와 무관하고 단지 기상에 존재하는 반응성 산소이온의 양과 기판자체 DS bias에 의존하였다. 마이크로파 출력이 300, 400 W인 실험조건에서 표면조도가 낮고, 계면결함밀도가 ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$로 $Si/SiO_2$계면에서 결함이 적은 양질의 산화막이 얻어졌다. In this work, the $SiO_2$ films on the silicon substrate with different orientations were first prepared by the low temperature process using the ECR plasma diffusion as a function of microwave power and oxidation time. Before and after thermal treatment, the surface morphology, Si/O ratio from physicochemical properties, and the electrical properties of the oxide films were also investigated. The oxidation rate increased with microwave power, while surface morphology showed the nonuniform due to etching. The film quality, therefore, was lowered with increasing the defect by etching and the content of positive oxide ions in the oxide films from bulk by higher self-DC bias. The content of positive oxide ions in the oxide films with different Si orientations showed Si(100) < Si(111) < poly Si. The defects in $Si/SiO_2$ interface of $SiO_2$ film could be decreased by annealing, while $Q_{it}$ and $Q_f$ were independent of thermal treatment and the dependent on concentration of reactive oxide ions and self-DC bias of substrate. At microwave power of 300, and 400 W, the high quality $SiO_2$ film that had lower surface roughness and defect in $Si/SiO_2$ interface was obtained. The value of interface trap density, then, was ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$.