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정웅(Jung Woong),최열(Choi Yeol) 대한건축학회 2010 大韓建築學會論文集 : 構造系 Vol.26 No.8
Generally concrete has a very good fire resistance. The use or interest of High-flowability concrete (HFC) has been increased in civil engineering in the last 25 years because HFC shows higher fluidity, filling ability and sufficient segregation resistance when its placing into the congested reinforcement or larger size of complex structural members without any vibration efforts. Therefore it is very necessary to assess the properties of HFC after fire exposures. This study describes laboratory experimental study on the physical properties of HFC subjected to three different exposure temperatures and three different exposure times. For this purpose 24 cylinders of HFC were tested. Mechanical properties such as residual compressive strength, axial deformation, mass loss and bulk modulus of elasticity were examined. Test results showed that the residual compressive strength, mass loss and elastic modulus were decreased with the increased temperature, and were showed a similar decreasing pattern those of normal strength concrete and high strength concrete.
LC-MS/MS 시스템을 이용한 소변 중 N-니트로사민류 분석법 확립
박나연,정웅,고영림,Park, Na-Youn,Jung, Woong,Kho, Younglim 대한화학회 2017 대한화학회지 Vol.61 No.2
N-니트로사민은 이차 아민과 아질산이 산성조건 하에서 니트로소화 반응을 통해 생성되는 니트로소 화합물이다. 약 300여종이 존재하며, 그 중 90%가 동물실험을 통해 발암성이 있음이 확인되었다. 1987년 IARC에서 NDMA와 NDEA를 Group 2A로 지정하였고, NDPA, NDBA, NPYR, NPIP, NMOR을 Group 2B로 지정하였다. 본 연구에서는 N-니트로사민류의 생물학적 모니터링을 위하여 소변 중 N-니트로사민류의 분석법을 확립하였다. 소변시료는 고체상추출(Solid phase extraction, SPE)을 통하여 전처리 한 후, LC-(APCI)-MS/MS를 이용하여 정량분석 하였다. 확립된 분석법의 정확도는 85.8~110.2% 이었고, 정밀도는 1.1~10.5%로 나타났다. 검출한계는 0.0002 (NDBA) ~ 0.0793 (NDMA) ng/ml 이었고, 검량선 회귀식의 상관계수($r^2$)은 0.999 이상으로 우수한 직선성을 보여주었다. 실제 소변 중 N-니트로사민류의 평균 농도는 NDMA 2.645 mg/g creatinine, NDEA 0.067 mg/g creatinine, NMEA 0.009 mg/g creatinine, NDBA 0.011 mg/g creatinine, NPIP 0.271 mg/g creatinine, NPYR 0.413 mg/g creatinine 이고, NDPA와 NMOR은 검출되지 않았다. 추후 N-니트로사민류의 인체 노출량 평가 및 위해평가를 위한 기기분석방법으로 활용될 수 있을 것으로 판단된다. N-nitrosamines are the nitroso compounds which are produced by nitrosation reactions of the secondary amine and nitrite under acidic conditions. Approximately 300 species of N-nitrosamine have been tested for carcinogenicity in laboratory experiments, with 90% of them demonstrated carcinogenic effects different animal species, including higher primates. In 1978, IARC classified NDMA and NDEA as Group 2A, and NDPA, NDBA, NPIP, NPYR and NMOR as Group 2B. In this study, we established pretreatment and analytical method for N-nitrosamines (NDMA, NDEA, NMEA, NDPA, NDBA, NPIP, NPYR and NMOR) in human urine for biological monitoring of N-nitrosamines. The analytes were extracted using solid phase extraction (SPE), then quantitative analysis was performed by LC-(APCI)-MS/MS. The accuracies of the established method were between 85.8~108.7% and precisions were lower than 20%. The limit of detection (LOD) were between 0.0002 (NDBA) and 0.0793 (NDMA) ng/ml. The linearity obtained was satisfying for the 8 N-nitrosamines, with a coefficient of determination ($r^2$) higher than 0.999. The mean concentrations of N-nitrosamines in the urine were 2.645 mg/g creatinine for NDMA, 0.067 mg/g creatinine for NDEA, 0.009 mg/g creatinine for NMEA, 0.011 mg/g creatinine for NDBA, 0.271 mg/g creatinine for NPIP and 0.413 mg/g creatinine for NPYR. NDPA and NMOR were not detected. It can be used as a instrumental methodology for evaluation and risk assessment of human exposure to N-nitrosamines for the further research.
고온, 고전압 Ni/4H-SiC 및 Ni/6H-SiC Schottky 다이오드의 제작 및 전기적 특성 연구
이호승,이상욱,신동혁,박현창,정웅,Lee, Ho-Seung,Lee, Sang-Wuk,Shin, Dong-Hyuk,Park, Hyun-Chang,Jung, Woong 대한전자공학회 1998 電子工學會論文誌, D Vol.d35 No.11
본 논문에서는 nickel/silicon carbide(Ni/SiC) 접합에 의한 Schottky 다이오드를 제작하고, 그 전기적 특성을 조사하였다. Ni/4H-SiC의 경우, 산화막 모서리 단락을 하였을 때 상온에서 973V의 역방향 항복전압이 측정되었으며 이는 모서리 단락되지 않은 Schottky 다이오드의 역방향 항복전압 430V에 비해 매우 높았다. Ni/6H-SiC Schottky 다이오드의 경우, 산화막으로 모서리 단락시켰을 때와 시키지 않았을 때의 역방향 항복전압은 각각, 920V와 160V 였다. 고온에서의 소자 특성도 매우 좋아서 Ni/4H-SiC Schottky 다이오드와 Ni/6H-SiC Schottky 다이오드 모두 300℃까지 전류 특성의 변화가 거의 없었으며 550℃에서도 양호한 정류 특성을 보였다. 상온에서의 Schottky barrier height와 이상인자(ideality factor) 및 specific on-resistance는 Ni/4H-SiC의 경우는 1.55eV, 1.3, 3.6×10/sup -2/Ω·㎠이었으며 Ni/6H-SiC Schottky 다이오드의 경우에 1.24eV, 1.2, 2.6×10/sup -2Ω·㎠/로 나타났다. 실험 결과 Ni/4H-SiC 및 Ni/6H-SiC Schottky 다이오드 모두 고온, 고전압 소자로서 우수한 특성을 나타냄이 입증되었다. Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..