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Cu(In,Ga)Se<sub>2</sub> 박막의 저온 성장 및 NaF 후속처리를 통한 태양전지 셀 특성 연구
김승태,정광선,윤재호,박병국,안병태,Kim, Seung Tae,Jung, Gwang Seon,Yun, Jae Ho,Park, Byong Guk,Ahn, Byung Tae 한국태양광발전학회 2015 Current Photovoltaic Research Vol.3 No.1
High efficiency $Cu(In,Ga)Se_2$ solar cells are generally prepared above $500^{\circ}C$. Lowering the process temperature can allow wider selection of substrate material and process window. In this paper, the three-stage co-evaporation process widely used to grow CIGS thin film at high temperature was modified to reduce the maximum substrate temperature. Below $400^{\circ}C$ the CIGS films show poor crystal growth and lower solar cell performance, in spite of external Na doping by NaF. As a new approach, Cu source instead of Cu with Se in the second stage was applied on the $(In,Ga)_2Se_3$ precursor at $400^{\circ}C$ and achieved a better crystal growth. The distribution of Ga in the films produce by new method were investigated and solar cells were fabricated using these films.
Cu(In,Ga)Se₂ 박막의 저온 성장 및 NaF 후속처리를 통한 태양전지 셀 특성 연구
김승태(Seung Tae Kim),정광선(Gwang Seon Jung),윤재호(Jae Ho Yun),박병국(Byong Guk Park),안병태(Byung Tae Ahn) 한국태양광발전학회 2015 Current Photovoltaic Research Vol.3 No.1
High efficiency Cu(In,Ga)Se₂ solar cells are generally prepared above 500°C. Lowering the process temperature can allow wider selection of substrate material and process window. In this paper, the three-stage co-evaporation process widely used to grow CIGS thin film at high temperature was modified to reduce the maximum substrate temperature. Below 400°C the CIGS films show poor crystal growth and lower solar cell performance, in spite of external Na doping by NaF. As a new approach, Cu source instead of Cu with Se in the second stage was applied on the (In,Ga)₂Se₃ precursor at 400°C and achieved a better crystal growth. The distribution of Ga in the films produce by new method were investigated and solar cells were fabricated using these films.