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벌크형 비정질 Zr계 합금의 결정화 열처리에 따른 동적변형 거동
장재준,이병주,황진일,박익민,조경목,조영래,Chang J. J,Lee B. J,Hwang J. I,Park I. M,Cho K. M,Cho Y. R 한국재료학회 2004 한국재료학회지 Vol.14 No.3
The mechanical properties of a bulk amorphous alloy ($Zr_{41.2}$ $Ti_{13.8}$ /$Cu_{10}$ $Ni_{10}$ $Be_{22.5}$ /at.%) before and after an annealing treatment were investigated. For the bulk amorphous alloy, the compressive strength was about 2.0 GPa, irrespective of the strain rates in the range of $10^{-4}$ to $10^3$$ sec^{-1}$ . Fine-sized nanocrystalline particles (10~100 nm) were precipitated homogeneously in the bulk amorphous matrix after the annealing treatments. Compared to the bulk amorphous materials, these composite materials, composed of the nanocrystalline phases and a bulk amorphous matrix had much different mechanical properties. The strength and strain of coposite materials measured by a compressive test showed a peak-maximum values at 7 vol.% of the nanocrystalline phases. The values in higher volume fraction of the crystalline phases in the amorphous matrix were decreased, as measured by both quasi-static and high strain rate. The decrease in fracture strength is due to presence of the dispersed large-crystalline phases in the amorphous matrix.
2단계 MOCVD법에 의해 사파이어 기판 위 성장된 undoped GaN 에피박막의 특성에 미치는 고온성장 온도변화의 영향
장경화,권명석,조성일,Chang K.,Kwon M. S.,Cho S. I. 한국진공학회 2005 Applied Science and Convergence Technology Vol.14 No.4
2단계 성장법으로 c-plane 사파이어 단결정 기판 위에 metalorganic chemical vapor deposition(MOCVD)법으로 undoped GaN 에피층을 성장시켰다. 고온 성장시 성장 온도 변화가 undoped GaN 에피층의 표면형상과 거칠기, 구조적 결정성, 광학적 성질, 전기적 성질에 미치는 영향을 연구하였다. 수평형 MOCVD 장치를 이용해 압력 300 Torr 저압에서 성장시켰으며, 저온 핵생성층 성장조건은 $500^{\circ}C$로 고정시키고, 2단계 성장 온도를 $850\~1050^{\circ}C$범위로 변화시켰다. 형성된 undoped GaN 에피층을 원자력현미경, 고분해능 X-선회절장치, 광발광측정, 홀 효과 측정 장치 등을 이용하여 분석, 고찰하였다. Undoped GaN epitaxial layer was grown on c-plane sapphire substrate by a two-step growth with metalorganic chemical vapor deposition(MOCVD). We have investigated the effects of the variation of final growth temperature on surface morphology, roughness, crystal quality, optical property, and electrical property In a horizontal MOCVD reactor, the film was grown at 300 Tow low-pressure with a fixed nucleation temperature of $500^{\circ}C$, varing the final growth temperature from $850\~1050^{\circ}C$ . The undoped GaN epilayers were characterized by atomic force microscopy, high-resolution x-ray diffractometer, photoluminescence, and Hall effect measurement.
논문 : 정보처리 및 복합기술 ; 유비쿼터스 센서네트워크를 이용한 농업환경인자 측정 -온도, 습도, 조도-
장영창 ( Y. C. Chang ),정선옥 ( S. O. Chung ),한인송 ( I. S. Han ),노광모 ( K. M. Noh ) 한국농업기계학회 2011 바이오시스템공학 Vol.36 No.2
This study was performed to develop a wireless system for measuring agricultural atmospheric factors using ubiquitous sensor network(USN). In the study, temperature, humidity and light intensity were selected and evaluated as major agricultural atmospheric factors. An USN system was designed and implemented by using Zigbex I and II (mote sensor nodes of MICA series) provided by Hanback Electronics, Korea. The system was tested in a greenhouse and an orchard. The experiment results showed that the suggested USN measuring system would be very effective on comprehensive measurement of the selected factors on the basis of time, day, spatial sequence with reasonable costs.