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텅스텐 선으로 만든 porous plug의 conductance
임재영(Jae-Young Leem),정광화(Kwang-Hwa Chung),박재홍(Jae-Hong Park),홍승수(Seung-Soo Hong),신용현(Yong-Hyun Shin),이철로(Chul-Rho Lee) 한국진공학회(ASCT) 1992 Applied Science and Convergence Technology Vol.1 No.1
작은 구멍속에 텅스텐 선을 넣어 만든 porous plug의 conductances를 이론적으로 계산하고, 실험적인 값과 비교하여 기하학적 인자 K를 구현하였다. K값은 텅스텐 선을 넣지 않았을 경우 0.91-1.00, 3개의 텅스텐 선을 넣었을 경우 0.77-0.78, 4개의 텅스텐 선을 넣었을 경우 0.85-0.88이었다. 한편 제작된 porous plug를 가지고 대기중에 노출시킨 시간에 따른 conductance의 변화를 측정한 결과 0.4% 오차 범위 내에서 일치하였다. The conductances of the porous plugs, which are made by inserting tungsten wires into small holes, are calculated and compared with values measured by experiment. For the porous plug with no wire, the ratio K of C_(exp) and C_(theo) is in the range 0.91-1.00, and in the range 0.77-0.78 and 0.85-0.88 for plugs with three and four wires, respectively. The variations in conductances as a function of exposure time to the air were measured and in no case have variations of more than +0.4 per cent been observed.
분자선에피택시에 의해 성장한 GaAs/AlGaAs 양자우물의 성장 멈춤 효과
김민수,임재영,Kim, Min-Su,Leem, Jae-Young 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.5
The growth interruption effects on growth mode of the GaAs and AlGaAs epitaxial layers grown on GaAs substrate by molecular beam epitaxy were investigated. Growth process of the epitaxial layers as a function of the growth interruption time was observed by reflection high energy electron diffraction (RHEED). The growth interruption time was 0, 15, 30, 60 s. The GaAs/$Al_{0.3}Ga_{0.7}As$ multi quantum wells (MQWs) with different growth interruption time were grown and its properties were investigated. RHEED intensity oscillation and optical property of the MQWs were dependent on the growth interruption time. When the growth interruption time was 30 s, interface between the well and barrier layers became sharper. 분자선 에피택시 방법을 이용하여 GaAs 기판 위에 GaAs 및 AlGaAs 에피층을 성장하면서 성장 멈춤 효과를 연구하였다. 성장 멈춤 시간에 따른 에피층 성장 과정은 반사 고에너지 전자회절로 측정하였다. 성장 멈춤 시간은 0, 15, 30, 60초로 하였다. 그리고 성장 멈춤 시간을 달리하여 GaAs/$Al_{0.3}Ga_{0.7}As$ 다양자우물을 성장한 후 양자우물의 특성을 조사하였다. 반사 고에너지 전자회절의 강도 진동은 성장 멈춤 시간에 영향을 받고 있었다. 그리고 양자우물의 광특성도 성장 멈춤 시간에 의존하고 있었다. 성장 멈춤 시간이 30초일 때 우물과 장벽층 사이에 급준한 계면을 가지는 에피층을 얻을 수 있었다.
졸겔 스핀코팅 방법으로 제작된 ZnO 박막에서 Li 원자들이 물성에 미치는 영향
김영규 ( Young Gyu Kim ),박형길 ( Hyung Gil Park ),지익수 ( Ik Soo Ji ),김소아람 ( So A Ram Kim ),김종수 ( Jong Su Kim ),김진수 ( Jin Soo Kim ),김양수 ( Yang Soo Kim ),임재영 ( Jae Young Leem ) 대한금속재료학회(구 대한금속학회) 2014 대한금속·재료학회지 Vol.52 No.5
Undoped and Li-doped ZnO(LZO) thin films were grown on quartz substrates by a sol-gel spin- coating method. The effects of Li contents on the structural and optical properties of the ZnO thin flims were investigated by X-ray diffraction (XRD), photoluminescence (PL), and ultraviolet-visible spectrophotometer. In the XRD investigation, undoped and LZO thin films had a wurtzite structure and high c-axis orientation. The intensity and the full width at half maximum (FWHM) of the (002) peak for LZO was the largest and smallest at 2.5 at%, which indicate that the LZO thin film is the most crystalline at 2.5 at%. In the PL investigation, the near band edge emissions of the LZO thin films were blue-shifted and the FWHM of the LZO thin films decreased with increasing Li doping concentrations.
양극산화 시간 및 전류밀도 변화에 따른 다공질 실리콘의 특성 변화
최현영(Hyun Young Choi),김민수(Min Su Kim),김군식(Ghun Sik Kim),조민영(Min Young Cho),전수민(Su Min Jeon),임광국(Kwang Gug Yim),이동율(Dong-Yul Lee),김진수(Jin Soo Kim),김종수(Jong Su Kim),임재영(Jae-Young Leem) 한국표면공학회 2010 한국표면공학회지 Vol.43 No.3
The PS(porous Si) were fabricated with different anodization time and current density. The structural and optical properties of PS were investigated by SEM(scanning electron microscopy), AFM(atomic force microscopy), and PL(photoluminescence). It is found that the pore size and surface roughness of PS are proportional to the current density. The PL spectra show that the PL peak position is red-shifted with increasing anodization time. This behavior corresponds to the change of pore size which is consistent with the quantum confinement model. The FWHM(full width at half maximum) of PL peak is decreased from 97 to 51 nm and the PL peak position is blue-shifted with increasing current density up to 10 ㎃/㎠. The PL peak intensity of the PS fabricated under 1 ㎃/㎠ is the highest among samples.
분자선에피택시에 의해 Si (100) 기판 위에 성장한 GaAs 에피층의 특성에 대한 기판 세척효과
조민영,김민수,임재영,Cho, Min-Young,Kim, Min-Su,Leem, Jae-Young 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.5
The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy (MBE) using the two-step method. The Si(100) substrates were cleaned with three different surface cleaning methods of vacuum heating, As-beam exposure, and Ga-beam deposition at the substrate temperature of $800^{\circ}C$ in the MBE growth chamber. Growth temperature and thickness of the GaAs epitaxial layer were $800^{\circ}C$ and $1{\mu}m$, respectively. The surface structure and properties were investigated by reflection high-energy electron diffraction (RHEED), AFM (Atomic force microscope), DXRD (Double crystal x-ray diffraction), PL (Photoluminescence), and PR (Photoreflectance). From RHEED, the surface structure of GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition is ($2{\times}4$). The GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition has a high quality. 분자선 에피택시 장비를 이용하여 두 단계 방법(two-step method)으로 Si (100) 기판 위에 GaAs 에피층을 성장하였다. Si 기판은 초고진공을 유지하고 있는 MBE 성장 챔버 속에서 세척 방법을 달리하여 Si 기판표면에 존재하는 불순물(산소, 탄소 등)을 제거하였다. 첫 번째는 Si 기판을 몰리브덴 히터를 사용하여 $800^{\circ}C$로 직접 가열하였다. 두 번째는 Si 기판 표면에 As 빔을 조사시켜 주면서 $800^{\circ}C$로 Si 기판을 가열하였다. 세 번째는 Si 기판 표면에 Ga을 증착한 후 Si 기판을 $800^{\circ}C$로 가열하였다. 이와 같은 세 가지 다른 조건으로 세척한 Si(100) 기판 위에 성장한 GaAs 에피층의 특성은 reflection high-energy electron diffraction (RHEED), atomic force microscope (AFM), double crystal x-ray diffraction (DXRD), photoluminescence (PL), photoreflectance(PR) 등으로 조사하였다. Ga 빔을 증착하여 세척한 Si 기판 위에 성장된 GaAs 에피층의 RHEED 패턴은 ($2{\times}4$) 구조를 가지고 있었다. Ga 빔을 증착하여 세척한 Si 기판 위에 성장된 GaAs 에피층이 가장 좋은 결정성을 가지고 있었다.
AuGe 액체금속 이온이 주입된 n-GaAs의 물성연구
강태원,이정주,김송강,홍치유,임재영,정관수,Kang, Tae-Won,Lee, Jeung-Ju,Kim, Song-Gang,Hong, Chi-Yhou,Leem, Jae-Young,Chung, Kwan-Soo 대한전자공학회 1989 전자공학회논문지 Vol. No.
액체금속이온원으로 부터 발생한 AuGe 이온빔을 GaAs기판에 주입시킨 후 이 시료의 표면성분과 구조를 AES(Auger electron spectroscopy), RHEED(reflection high energy electron diffraction), SEM(scanning electron microscopy) and EPMA(electron probe microanalysis)등으로 조사하였으며 AES depth profile 실험결과를 이체충돌에 의한 Monte Carlo simulation과 비교하였다. AuGe 이온이 주입된 시료를 AES, EPMA로 측정한 결과 As의 preferential스피터링이 나타났으며 300$^{circ}$C로 열처리하면 Ga과 outdiffusion되었다. 또한 측정한 Au와 Ge의 depth profile은 이체충돌에 의한 Monte Carlo simulation의 결과와 잘 일치하였다. The ion beam extracted from the AuGe liquid metal ion source was implanted into GaAs substrate. The surface composition and the structure of ion implanted samples were investigated by AES, RHEED, SEM and EPMA. The depth profiles measured by AES were compared with the results of Monte Carlo simulation based on the two-body collision. As the results of AuGe ion implantation the preferential sputtering of As were revealed by AES and EPMA, and the outdiffusion of Ga and Ge was investigated by 300$^{circ}C$ annealing. The Au and Ge depth profiles measured by AES agreed with the results of Monte Carlo simulation based on the two-body collision.
광전소자 응용을 위한 Muscovite mica 기판 위에 성장된 갈륨 도핑된 ZnO 박막의 광학적 특성 및 광학 상수
김영규 ( Younggyu Kim ),임재영 ( Jae Young Leem ) 대한금속재료학회(구 대한금속학회) 2016 대한금속·재료학회지 Vol.54 No.2
Ga-doped ZnO (GZO) thin films were grown on muscovite mica substrates by sol-gel spin-coating. The effects of post-annealing on the optical properties and constants of the GZO thin films were investigated. All the films exhibited strong near-band-edge emission in the UV range, while the defect-related deep-level emission in the visible region was only observed at 600 ℃. The average transmittance of the films was about 75% in the visible region and the sharp absorption edges were shifted toward a higher wavelength and became sharper with an increase in the post-annealing temperature. The refractive index was measured for the as-grown and annealed GZO thin film at 500 ℃. The single oscillator energy, dispersion energy, M-1 and M-3 moments, average oscillator strength and wavelength, and the refractive index at an infinite wavelength were obtained from the refractive index values of the films. In addition, the real and imaginary parts of the dielectric constant and optical conductivity of the films were measured.(Received April 7, 2015)
기울어진 GaAs(100) 기판 위에 성장된 InAs 박막 특성에 대한 As BEP 효과
김민수(Min Su Kim),임재영(Jae-Young Leem) 한국표면공학회 2010 한국표면공학회지 Vol.43 No.4
The InAs thin films were grown on GaAs(100) substrate with 2° tilted toward [0??] with different As beam equivalent pressure (BEP) by using molecular beam epitaxy. Growth temperature and thickness of the InAs thin films were 480℃ and 0.5 ㎛, respectively. We studied the relation between the As BEP and the properties of InAs thin films. The properties of InAs thin films were observed by reflection high-energy electron diffraction (RHEED), optical microscope, and Hall effect. The growth, monitored by RHEED, was produced through an initial 2D (2-dimensional) nucleation mode which was followed by a period of 3D (3-dimensional) island growth mode. Then, the 2D growth recovered after a few minutes and the streak RHEED pattern remained clear till the end of growth. The crystal quality of InAs thin films is dependent strongly on the As BEP. When the As BEP is 3.6×10<SUP>?6</SUP> Torr, the InAs thin film has a high electron mobility of 10,952 cm2/Vs at room temperature.
Hydrogenation on Defect Levels of GaAs Epilayer on Si
배인호,강태원,홍치유,임재영,조성환,장진,이완호,Bae, In-Ho,Kang, Tae-Won,Hong, Chi-Yhou,Leem, Jae-Young,Cho, Sung-Hwan,Jang, Jin,Lee, Wan-Ho The Institute of Electronics and Information Engin 1990 전자공학회논문지 Vol.27 No.1
GaAs epilayer was grown on Si(100) substrate using the two-step growth method by MBE. The crystal growth mode have been investigated by RHEED. The hydrogenation effects of GaAs epilayer were studied by DLTS and Raman spectroscopy. The four electron traps in GaAs/Si layer were observed and their activation energy ranged from 0.47 eV to 0.81 eV below the conduction band. After hydrogenation at 250\ulcorner for 3 hours, new trap not observed and electron traps at Ec-0.68, 0.54 and 0.47 eV were almost passivated. Whereas the Ec-0.81 eV level showed no significant change in concentration. From Raman measurement, GaAs epilayer is found to be influenced by the tensile stress.
기상이동법으로 성장한 산화아연 나노막대의 포토루미네슨스 분석
김소아람 ( So A Ram Kim ),조민영 ( Min Young Cho ),남기웅 ( Gi Woong Nam ),김민수 ( Min Su Kim ),김도엽 ( Do Yeob Kim ),임광국 ( Kwang Gug Yim ),임재영 ( Jae Young Leem ) 대한금속재료학회(구 대한금속학회) 2011 대한금속·재료학회지 Vol.49 No.10
ZnO nanorods were grown on Au-coated Si substrates by vapor phase transport (VPT) at the growth temperature of 600℃ using a mixture of zinc oxide and graphite powders as source material. Au thin films with the thickness of 5 nm were deposited by ion sputtering. Temperature-dependent photoluminescence (PL) was carried out to investigate the optical properties of the ZnO nanorods. Five peaks at 3.363, 3.327, 3.296, 3.228, and 3.143 eV, corresponding to the free exciton (FX), neutral donor bound exciton (DoX), first order longitudinal optical phonon replica of free exciton (FX-1LO), FX-2LO, and FX-3LO emissions, were obtained at low-temperature (10 K). The intensity of these peaks decreased and their position was red shifted with the increase in the temperature. The FX emission peak energy of the ZnO nanorods exhibited an anomalous behavior (red-blue-red shift) with the increase in temperature. This is also known as an "S-shaped" emission shift. The thermal activation energy for the exciton with increasing temperature in the ZnO nanorods is found to be about 26.6 meV; the values of Varshni`s empirical equation fitting parameters are = 5×10(-4) eV/K, β = 350 K, and E(g)(0) = 3.364 eV.