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TLP 평가기법을 이용한 Diode type의 ESD 보호소자 특성 평가
이태일,김홍배,Lee, Tae-Il,Kim, Hong-Bae 한국반도체디스플레이기술학회 2007 반도체디스플레이기술학회지 Vol.6 No.4
In paper, We evaluated for various diode type ESD protection device using TLP measurement method. An Evaluation diode is divided to Enclosed type and Stripe type as pattern style in extensive. These diodes is split up followed factor that Anode-to-Cathod space, N+ region width, Multi type and Contact to Active space. After a TLP measurement, we can be got the Vt2, It2 by I-V characteristic values. In the results, diode of enclosed type is present relatively higher Current capability(It2) than stripe type in a same voltage conditions. And the Second-breakdown voltage(Vt2) were that Stripe type's diode higher than Enclosed type's diode as have $14{\sim}15V$. Finally we suggest the best diode design condition as ESD protection device using entire consequence.
Conventional CMOS 공정을 위한 GGNMOS Type의 ESD 보호소자의 TLP 특성 평가
이태일,김홍배,Lee, Tae-Il,Kim, Hong-Bae 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.10
In this paper, we deal with the TLP evaluation results for GGNMOS in ESD protection device of conventional CMOS process. An evaluation parameter for GGNMOS is that repeatability evaluation for reference device($W/L=50\;{\mu}m1.0\;{\mu}m$) and following factors for design as gate width, number of finger, present or not for N+ gurad -ring, space of N-field region to contact and present or not for NLDD layer. The result of repeatability was showed uniformity of lower than 1 %. The result for design factor evaluation was ; 1) gate width leading to increase It2, 2) An increase o( finger number was raised current capability(It2), and 3) present of N+ gurad-ring was more effective than not them for current sink. Finally we suggest the optimized design conditions for GGNMOS in evaluated factor as ESD protection device of conventional CMOS process.
RF Magnetron Sputtering을 이용한 Ba0.5Sr0.5TiO₃ 박막 커패시터의 제작과 전기적 특성에 관한 연구
이태일(Tae-Il Lee),박인철(In-Chul park),김홍배(Hong-Bae Kim) 한국진공학회(ASCT) 2002 Applied Science and Convergence Technology Vol.11 No.1
RF Magnetron Sputtering 방법으로 Ba_(0.5)Sr_(0.5)TiO₃ 박막을 Pt/Ti/SiO₂/Si 기판위에 증착하였다. Ba_(0.5)Sr_(0.5)TiO₃ 박막 증착시 기판온도는 실온으로 고정시켜주었고, 작업 가스 유량(Ar:O₂)과 RF Power는 각각 90:10에서 60:40까지 그리고 50 W와 75 W로 하였다. 또한 박막 증착 후 RTA(Rapid Thermal Annealing)를 이용하여 산소분위기에서 600℃로 고온 순간 열처리를 하였다. 커패시터 제작을 위해 UHV System의 E-beam evaporator를 이용하여 Pt를 증착하였다. XRD 측정을 통한 구조적 특성에서는 작업 가스 유량과 RF Power에 비해 고온 순간 열처리가 결정화에 기여도가 큼을 확인할 수 있었다. 전기적 특성에서는 RF Power가 50 W이고 열처리를 한 샘플에서 비교적 우수한 특성을 보여주었다. We deposited Ba_(0.5)Sr_(0.5)TiO₃(BST) thin-films on Pt/Ti/SiO₂/Si substrates using RF magnetron sputtering method. A Substrate temperature was fixed at room temperature, while working gas flow ratio and RF Power were changed from 90:10 to 60:40 and 50 W, 75 W respectively. Also after BST thin films were deposited, we performed annealing in oxygen atmosphere using Rapid Thermal Annealing. For capacitor application we deposited Pt using E-beam evaporator of UHV system. In a structural property study through XRD measurement we found that crystallization depends on annealing rather than working gas ratio or and RF Power. Electrical properties showed relatively superior characteristic on the annealed sample with 50 W of RF Power.