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인공생명 알고리듬에 의한 고속, 소폭 저널베어링의 최적설계
이윤희(Yun-Hi Lee),양보석(Bo-Suk Yang) 한국유체기계학회 1999 유체기계 연구개발 발표회 논문집 Vol.- No.-
This paper presents the artificial life algorithm which is remarkable in the area of engineering for optimum design. As artificial life organisms have a sensing system, they can find the resource which they want to find and metabolize it. And the characteristics of artificial life are emergence and dynamical interacting with environment. In other words, the micro interaction with each other in the artificial life's group results in emergent colonization in the whole system. In this paper, therefore, artificial life algorithm by using above characteristics is employed into functions optimization. The effectiveness of this proposed algorithm is verified through the numerical test of single and multi objective functions. The numerical tests also show that the proposed algorithm is superior to genetic algorithm and immune algorithm for the Multi-peak function. And artificial life algorithm is also applied to optimum design of high-speed, short journal bearings and verified through the numerical test.
플라즈마 표면 처리가 $BaTa_2O_6$박막의 전기적 특성에 미치는 효과에 관한 연구
김영식,이윤희,주병권,성만영,오명환,Kim, Young-Sik,Lee, Yun-Hi,Ju, Byeong-Kwon,Sung, Mang-Young,Oh, Myung-Hwan 대한전기학회 1999 전기학회논문지C Vol.48 No.5
Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.
Reactive Ion Etching에 의한 ITO/반도체 및 ITO/BaTiO3 구조의 선택적 에칭 특성
한일기,이윤희,김회종,이석,오명환,이정일,김선호,강광남,박홍이,Han, Il-Ki,Lee, Yun-Hi,Kim, Hwe-Jong,Lee, Seok,Oh, Myung-Hwan,Lee, Jung-Il,Kim, Sun-Ho,Kang, Kwang-Nham,Park, Hong-Lee 대한전자공학회 1995 전자공학회논문지-A Vol.32 No.1
Eteching characteristics of the Indium Tin Oxide (ITO), which is transparent conductor, was investigated with CH4/H2 and Ar as etching gases for the Reactive Ion Etching (RIE). With CH4/H2 for the etching gas, the highly selective etching characteristics for the ITO on GaAs was obtained. It was examined that the dominant etching parameter for the selective etchning of ITO on GaAs structure was the chamber pressure. But, the etching selectivity for ITO on InP was poor eventhough we tried systematic etching. RIE etching conditins using CH4/H2 gas was limited due to the formation of polymer on the substrates. In the case of Ar gas for the reactive gas, the selectivity of ITO on BaTiO3 was above 10. The etch rete of ITO was more sensitive to the etching parameters than that of BaTiO3, which was almost constant with different etching parameters.
정전 열 접합을 이용한 FED 스페이서의 초청정 정렬/탑재 공정 개발
주병권,강문식,이윤희,Ju, Byeong-Kwon,Kang, Moon-Sik,Lee, Yun-Hi 대한전기학회 2000 전기학회논문지C Vol.55 No.12
In this paper, a new idea about ultra-clean aligning and mounting method of FED spacers was introduced. The glass-to -glass electrostatic bonding process was employed in order to bond the micro-structures of spacers to black matrix area formed on an FED anode substrate. It is possible to get adhesive-free bonding interface and well-aligned spacer array on an FED anode substrate with a ${\pm}5{\mu}m$ accuracy. Finally, I inch-sized FED panel was demonstrated to make sure of its applicability to FED panel fabrication.
이주원,김훈,이윤희,장진,주병권,Lee, Joo-Won,Kim, Hoon,Lee, Yun-Hi,Jang, Jin,Ju, Byeong-Kwon 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.4
This paper reports the optimum structure of the vacuum packaged Porous poly-silicon Nano-Structured (PNS) emitter. The PNS layer was obtained by electrochemical etching process into polycrystalline silicon layer in a process controlled to anodizing condition. Current-voltage studies were carried out to optimize process condition of electron emission properties as a function of anodizing condition and top electrode thickness. Also, we measured in advance the electron emission properties as a function of substrate temperature because the vacuum packaged process was performed under the condition of high temperature ambient (430$^{\circ}C$). Auger Electron Spectrometer (AES) studies shows that Au as a top-electrode was diffused to PNS layer during temperature experiments. Thus, we optimized the thickness of top-electrode in order to make the vacuum package PNS emitter. As a result, the vacuum Packaged PNS emitter was successfully emitted by optimizing process.
몰리브덴 팁 전계 방출 소자의 제조 및 다이아몬드 상 카본의 코팅효과
주병권,정재훈,김훈,이상조,이윤희,차균현,오명환,Ju, Byeong-Kwon,Jung, Jae-Hoon,Kim, Hoon,Lee, San-Jo,Lee, Yun-Hi,Tchah, Kyun-Hyon,Oh, Myung-Hwan 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.7
Mo-tip field emitter arrays(FEAs) were fabricated by conventional Spindt process and their life time characteristics and failure mode were evaluated. The fabricated Mo-tip FEA could generate at least $0.35\{mu} A/tip$ emission current for about 320 persistently under a constant gate bias of 140 V and was finally destroyed through self-healing mode. Thin diamond-like carbon films were coated on the M-tip by plasma-enhanced CVD and the dependence of emission properties upon the DLC thickness was investigated. By DLC coating, the turn-on voltage and emission current were appeared to be improved whereas the current fluctuation was increased in the DLC thickness range of $0~1,000\{AA}$.
무기 박막형 보호층을 이용한 고분자 유기발광 다이오드의 특성 평가
김훈,김광호,김재경,이윤희,한정인,도이미,주병권,Kim, Hoon,Kim, Kwang-Ho,Kim, Jae-Kyung,Lee, Yun-Hi,Han, Jeong-In,Do, Lee-Mi,Ju, Byeong-Kwon 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.1
In this study, the inorganic thin-film passivation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam evaporation system, the various kinds of inorganic thin-films were deposited onto the organic layer and their interface properties between organic and inorganic layer were investigated. In this investigation, the MgO layer showed the most suitable properties, and based on this result, the time dependent emission properties were estimated for the OLED with and without passivation layer. In this experiment, we can see that the time-dependent emission properties of MgO passivated OLED had longer life-time compared to non-passivated OLED. Therefore, we can consider that the MgO thin film is one of the most suitable candidates for the thin-film passivation layer of OLED.
유리기판 위에 성장된 탄소나노튜브를 이용한 평판 램프의 전계방출 특성
이양두,문승일,한종훈,이윤희,주병권,Lee, Yang-Doo,Moon, Seung-Il,Han, Jong-Hun,Lee, Yun-Hi,Ju, Byeong-Kwon 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.6
We fabricated the 1-inch diode type flat lamp using CNTs, which were grown directly on soda-lime glass substrate at 600 ∼ 650 $^{\circ}C$ by thermal chemical vapor deposition(CVD) of acetylene gas. Turn- on field was about 2.8 V/${\mu}{\textrm}{m}$. We observed that uniform and high brightness had been obtained. The brightness of CNT flat lamp was measured up to about 14 kcd/$m^2$ at 2000V in spacing of 500 ${\mu}{\textrm}{m}$. The results showed that the CNTs were very good emission source and suitable for application in the lamp.