http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
NF<sub>3</sub> / H<sub>2</sub>O 원거리 플라즈마 건식 세정에 의한 SiGe 표면 특성 변화
박세란,오훈정,김규동,고대홍,Park, Seran,Oh, Hoon-Jung,Kim, Kyu-Dong,Ko, Dae-Hong 한국반도체디스플레이기술학회 2020 반도체디스플레이기술학회지 Vol.19 No.2
We investigated the Si<sub>1-x</sub>Ge<sub>x</sub> surface properties when dry cleaning the films using NF<sub>3</sub> / H<sub>2</sub>O remote plasma. After the dry cleaning process, it was found that about 80-250 nm wide bumps were formed on the SiGe surface regardless of Ge concentration in the rage of x = 0.1 ~ 0.3. In addition, effects of the dry cleaning processing parameters such as pressure, substrate temperature, and H<sub>2</sub>O flow rates were examined. It was found that the surface bump is significantly dependent on the flow rate of H<sub>2</sub>O. Based on these observations, we would like to provide additional guidelines for implementing the dry cleaning process to SiGe materials.
다공성 금속 샤워헤드가 적용된 상압플라즈마 화학기상증착법을 이용한 저온 다결정 실리콘 증착 공정
박형규,송창훈,오훈정,백승재,Park, Hyeong-Gyu,Song, Chang-Hoon,Oh, Hoon-Jung,Baik, Seung Jae 한국전기전자재료학회 2020 전기전자재료학회논문지 Vol.33 No.5
Modern thin film deposition processes require high deposition rates, low costs, and high-quality films. Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) meets these requirements. AP-PECVD causes little damage on thin film deposition surfaces compared to conventional PECVD. Moreover, a higher deposition rate is expected due to the surface heating effect of atomic hydrogens in AP-PECVD. In this study, polycrystalline silicon thin film was deposited at a low temperature of 100℃ and then AP-PECVD experiments were performed with various plasma powers and hydrogen gas flow rates. A deposition rate of 15.2 nm/s was obtained at the VHF power of 400 W. In addition, a metal foam showerhead was employed for uniform gas supply, which provided a significant improvement in the thickness uniformity.
산화 그래핀을 이용한 구리이온 흡착과 투과도 특성을 이용한 구리이온 농도 실시간 측정
김승두,류희중,오훈정,황완식,Kim, Seungdu,Ryou, Heejoong,Oh, Hoon-Jung,Hwang, Wan Sik 한국반도체디스플레이기술학회 2021 반도체디스플레이기술학회지 Vol.20 No.2
Various Cu ions are discharged into water from various industries, which results in a severe trouble for groundwater, soil, air, and eventually animals and humans. In this work, graphene oxide (GO) is introduced as a Cu removal absorber and the real-time monitoring method is demonstrated. The results show that GO is a very effective material to absorb Cu ions in the solution. In addition, the residual Cu ions in the solution is monitored via optical transmittance method, which well match with Inductively Coupled Plasma Mass Spectrometer (ICP-MS) analysis.
수열합성 공정으로 합성된 산화갈륨의 상변화에 따른 광촉매 특성
류희중,김선재,이인규,오훈정,황완식,Ryou, Heejoong,Kim, Sunjae,Lee, In Gyu,Oh, Hoon-Jung,Hwang, Wan Sik 한국반도체디스플레이기술학회 2021 반도체디스플레이기술학회지 Vol.20 No.2
GaOOH is obtained via hydrothermal synthesis procedure. The formed GaOOH is turned into α-Ga<sub>2</sub>O<sub>3</sub> at 500℃ annealing. As the annealing temperatures increase the α-Ga<sub>2</sub>O<sub>3</sub> is in part turned into β-Ga<sub>2</sub>O<sub>3</sub> and fully turned into β-Ga<sub>2</sub>O<sub>3</sub> after 1100℃. XPS and PL results reveal that heterojunction interface between α-Ga<sub>2</sub>O<sub>3</sub> and β-Ga<sub>2</sub>O<sub>3</sub> become maxim at 500℃ annealing condition, which result in the highest photocatalytic activity. The presence of heterojunction interface slows down the recombination process by separating photogenerated electron-hole pairs and thereby enhance the overall photocatalytic activity.