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Direct Wafer Bonding법에 의한 InP 기판과 $\textrm{Si}_3\textrm{N}_4$/InP의 접합특성
김선운,신동석,이정용,최인훈,Kim, Seon-Un,Sin, Dong-Seok,Lee, Jeong-Yong,Choe, In-Hun 한국재료학회 1998 한국재료학회지 Vol.8 No.10
n-InP(001)기판과 PECVD법으로 ${Si}_3N_4$(200nm)막이 성장된 InP 기판사이의 direct wafer bonding을 분석하였다. 두 기판을 접촉시켰을 때 이들 사이의 결합력에 크게 영향을 주는 표면 상태를 접촉각 측정과 AFM을 통해서 분석하였다. InP 기판은 $50{\%}$ 불산용액으로 에칭하였을 때 접촉각이 $5^{\circ}$, RMS roughness는 $1.54{\AA}$이었다. ${Si}_3N_4$는 암모니아수 용액으로 에칭하였을 때 RMS roughness가 $3.11{\AA}$이었다. Inp 기판과 ${Si}_3N_4$/InP를 각각 $50{\%}$ 불산 용액과 암모니아수 용액에 에칭한 후 접촉시켰을 때 상당한 크기의 초기 겹합력을 관찰할 수 있었다. 기계적으로 결합된 시편을 $580^{\circ}C$-$680^{\circ}C$, 1시간동안 수소 분위기와 질소분우기에서 열처리하였다. SAT(Scanning Acoustic Tomography)측정으로 두 기판 사이의 결합여부를 확인하였다. shear force로 측정한 InP 기판과 ${Si}_3N_4$/InP사이의 결합력은 ${Si}_3N_4$/InP 계면의 결합력만큼 증가되었다. TEM과 AES를 이용해서 di-rect water bonding 계면과 PECVD계면을 분석하였다. The direct wafer bonding between n-InP(001) wafer and the ${Si}_3N_4$(200 nm) film grown on the InP wafer by PECVD method was investigated. The surface states of InP wafer and ${Si}_3N_4$/InP which strongly depend upon the direct wafer bonding strength between them when they are brought into contact, were characterized by the contact angle measurement technique and atomic force microscopy. When InP wafer was etched by $50{\%}$ HF, contact angle was $5^{\circ}$ and RMS roughness was $1.54{\AA}$. When ${Si}_3N_4$ was etched by ammonia solution, RMS roughness was $3.11{\AA}$. The considerable amount of initial bonding strength between InP wafer and ${Si}_3N_4$/InP was observed when the two wafer was contacted after the etching process by $50{\%}$ HF and ammonia solution respectively. The bonded specimen was heat treated in $H^2$ or $N^2$, ambient at the temperature of $580^{\circ}C$-$680^{\circ}C$ for lhr. The bonding state was confirmed by SAT(Scannig Acoustic Tomography). The bonding strength was measured by shear force measurement of ${Si}_3N_4$/InP to InP wafer increased up to the same level of PECVD interface. The direct wafer bonding interface and ${Si}_3N_4$/InP PECVD interface were chracterized by TEM and AES.
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Ceramic 메탈 헬라이드 램프용 Dimming 전자식 안정기 개발
임기승(Ki-Seung Lim),최현희(Hyeon-Hui Choe),신동석(Dong-Seok Sin),박종연(Chong-Yun Park) 대한전기학회 2009 전기학회논문지 Vol.58 No.10
Metal halide (MH) lamps have been largely used due to high luminous efficiency, good color rendering, and long life. Since the metal halide lamps have problems of high ignition voltage and acoustic resonance. Thus, the design of ballast is very difficult for engineers. This paper proposes prototype of electric ballast in order to solve above two problems. The proposed electric ballast is consisted of EMI filter, full wave rectifier circuit, active PFC, DBI(Dual Buck Inverter), dimming circuit and ignitor circuit. The DBI supplies both rectangular voltage and current to the lamp. As the result of the experiment, the acoustic resonance was eliminated and the ignitor circuit was designed to generate high ignition voltage than 5kV. It makes the dimming circuit possible to control the lamp power in range between 230W and 350W
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林秉魯(Byoung-Noh Lim),張牧淳(Mog-Soon Jang),申東碩(Dong Seok Sin),朴鐘演(Chong-Yeun Park) 대한전기학회 2007 전기학회논문지 Vol.56 No.9
This paper presents a new modeling method using lamp output power and the modeling coefficients of the lamp. The proposed method utilizes the lamp modeling coefficients such as equivalent impedance Z(p), coupling coefficient of the transformer k(p), turns ratio of the transformer n(p), and plasma resistance Rp(p) as a function of lamp output power. The equivalent impedance Z(p) was developed from the equivalent resistance Req(p) and equivalent inductance Leq(p) of the lamp. Simulation and experimental results of the proposed model are presented in order to validate the proposed method. The modeling method can use to design an impedance matching circuit for a Class-D inverter.
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박종연(Chong-Yun Park),임기승(Ki-Seung Lim),신동석(Dong-Seok Sin),최현희(Hyeon-Hui Choe) 대한전기학회 2009 전기학회논문지 Vol.58 No.4
This paper proposes a high efficient Dual Buck Inverter design with a zero voltage switching (ZVS) control technique. The ZVS control is realized by adding a feedback loop circuit which is implemented by simple RS latch and TTL gate. The used load was 200W-Ceramic Metal Halide Lamp. The experimental results show that the proposed Inverter system could avoid the acoustic resonance and achieve high efficiency by Zero Voltage Switching.
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일반적인 Automatic Navigation System Design에서 Image Acquisition 문제점에 관한 연구
김영택,신동석 慶星大學校 1994 論文集 Vol.15 No.2
Image Processed Decision System for Automatic Navigation Control, especially for the Rear-end Collision Protection System has been proposed. Image Acquisition with temporarily consecutive Sampling Produces serious inconsistancy problem due to the pitching Sensor(CCD Camera). The phenomenon urges us to find another method to dicide a certain situation.
ScienceON
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