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열처리공학회지,제27권 제1호(2014) : GZO/ZnO 적층박막의 두께변화에 따른 구조적, 전기적, 광학적 물성 변화
김승홍 ( Seung Hong Gong ),김선경 ( Dong Kyung Kim ),김소영 ( So Young Kim ),전재현 ( Jae Hyun Jeon ),공태경 ( Tae Kyung Gong ),최동혁 ( Dong Hyuk Choi ),손동일 ( Dong Ll Son ),김대일 ( Daeil Kim ) 한국열처리공학회 2014 熱處理工學會誌 Vol.27 No.1
Ga doped ZnO (GZO) single layer and GZO/ZnO bi-Iayered films were deposited on glass substrates by radio frequency magnetron sputtering and then the influence of film thickness on the structural, electrical. and optical properties of the films was considered, Thicknesses of the GZO/ZnO films was varied as GZO 100 nm, GZO 85 nm/ZnO 15 nm and GZO 70 nm/ZnO 30 nm, respectively The observed result means that optical transmittance and electrical resistivity of the films were influenced with film thickness and GZO 85 nm/ZnO 15 nm bilayered films show the higher figure of merit than that of the films prepared other films in this study,
전자빔 조사에 따른 GZO/TiO 2 박막의 특성 변화
김승홍 ( Seung Hong Kim ),김선경 ( Sun Kyung Kim ),김소영 ( So Young Kim ),허성보 ( Sung Bo Heo ),최동혁 ( Dong Hyu Choi ),손동일 ( Dong Il Son ),김대일 ( Dae Ll Kim ) 한국열처리공학회 2013 熱處理工學會誌 Vol.26 No.6
We have considered the influence of electron irradiation energy of 300, 600 and 900 eV on the stuctural,electrical and optical properties of GZO/TiO2 thin films prepared with RF magentron sputtering. The optical transmittance and electrical resistivity of the films were dependent on the electron`s irradiation energy. The electron irradiated GZO/TiO2 films at 900 eV are grown as a hexagonal wurtzite phase and the resistivity is decreased with electron irradiation energy. The GZO/TiO2 films irradiated at 900 eV shows the lowest resistivity of 4.3 × 10-3Ωcm. The optical transmittance in a visible wave length region also increased with the electron irradiation energy. The film that electron irradiated at 900 eV shows 82% of optical transmittance and higher work function of 5.18eV in this study.